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公开(公告)号：US20240170528A1
公开(公告)日：2024-05-23
申请号：US18428396
申请日：2024-01-31
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Shin-ichiro TAKAGI , Mitsuhito Mase , Jun Hiramitsu , Yasuhito Yoneta , Masaharu Muramatsu
IPC: H01L27/148 , H01L27/146 , H04N25/71 , H04N25/73
CPC classification number: H01L27/14843 , H01L27/14603 , H01L27/14607 , H01L27/14812 , H04N25/71 , H01L27/14831 , H04N25/73
Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.
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公开(公告)号：US11156700B2
公开(公告)日：2021-10-26
申请号：US16097664
申请日：2017-04-19
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Akihiro Shimada , Mitsuhito Mase , Jun Hiramitsu , Takashi Suzuki
Abstract: The present embodiment relates to a distance sensor that reduces a difference in amounts of current injected into each of plural charge collection regions prepared for one photosensitive region in order to avoid saturation caused by disturbance light. A current injection circuit injecting current into each charge collection region includes a voltage generation circuit generating a control voltage for adjustment of the injected current amount, and the voltage generation circuit generates the control voltage corresponding to a large amount of charge between the charge amounts of storage nodes coupled, respectively, to the charge collection regions. Meanwhile, a cascode device is disposed between a transistor configured to adjust the amount of current according to the control voltage and the storage node, and a potential of a current output end of the transistor and a potential of the storage node are separated.
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公开(公告)号：US11493337B2
公开(公告)日：2022-11-08
申请号：US16098187
申请日：2017-04-19
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Akihiro Shimada , Mitsuhito Mase , Jun Hiramitsu , Takashi Suzuki
Abstract: The present embodiment relates to a distance sensor configured to inject an equal amount of current into storage nodes coupled, respectively, to charge collection regions where charges of a photosensitive region is distributed by driving of first and second transfer electrodes and obtain a distance to an object based on difference information on charge amounts of the respective storage nodes. Saturation caused by disturbance light of each storage node is avoided by injecting the equal amount of current to each storage node, and the difference information on the charge amounts of the respective storage nodes, which is not easily affected by the current injection, is obtained by driving the first and second transfer electrodes according to the plurality of frames representing the electrode drive pattern, respectively.
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公开(公告)号：US10436908B2
公开(公告)日：2019-10-08
申请号：US15302178
申请日：2015-04-17
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito Mase , Jun Hiramitsu , Akihiro Shimada
IPC: G01S17/89 , G01S17/36 , G01S7/491 , H01L27/146 , H04N5/3745
Abstract: In a range image sensor, a plurality of range sensors are disposed in a one-dimensional direction. The plurality of range sensors include a photogate electrode, first and second signal charge accumulating regions disposed on one side of the photogate electrode, third and fourth signal charge accumulating regions disposed on the other side, first transfer electrodes for making charge flow into the first and fourth signal charge accumulating regions in response to a first transfer signal, and second transfer electrodes for making charge flow into the second and third signal charge accumulating regions in response to a second transfer signal.
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公开(公告)号：US20150276922A1
公开(公告)日：2015-10-01
申请号：US14433066
申请日：2013-07-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito Mase , Jun Hiramitsu , Takashi Suzuki
CPC classification number: G01S7/4816 , G01S7/4863 , G01S17/08 , G01S17/89 , H01L27/14605 , H01L27/1461 , H01L27/14612
Abstract: A distance sensor includes: a light receiving area including a first longer side and a second longer side; a photo gate electrode arranged on the light receiving area; a plurality of signal charge collection regions along the first longer side; a plurality of signal charge collection regions along the second longer side; a plurality of transfer electrodes along the first longer side provided with charge transfer signals having mutually-differing phases; a plurality of transfer electrodes along the second longer side provided with the charge transfer signals having mutually-differing phases; and a potential adjusting means positioned between the first and second longer sides and raises potential of an area extending in a direction in which the first and second longer sides extend to be higher than potential of side areas of the first and second longer sides.
Abstract translation: 距离传感器包括：受光区域，包括第一长边和第二长边; 布置在所述光接收区域上的光栅电极; 沿着第一长边的多个信号电荷收集区域; 沿第二长边的多个信号电荷收集区域; 沿着第一长边的多个传输电极具有相互不同相位的电荷传输信号; 沿着第二长边设置多个具有相互相位差的电荷转移信号的转移电极; 以及位于第一长边和第二长边之间的电位调节装置，并且提高沿第一和第二长边延伸的方向延伸的区域的电位高于第一和第二长边侧边区域的电位。
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Patent Agency Ranking
公开(公告)号：US09041917B2
公开(公告)日：2015-05-26
申请号：US14077029
申请日：2013-11-11
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito Mase , Takashi Suzuki
CPC classification number: G01C3/08 , G01S7/481 , G01S7/4863 , G01S17/89 , G01S17/936 , H01L27/14603 , H01L31/02024
Abstract: The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities QL, QR output from the units. One of the units is provided with a charge generating region (region outside a transfer electrode 5) where charges are generated in response to incident light, at least two semiconductor regions 3 which are arranged spatially apart to collect charges from the charge generating region, and a transfer electrode 5 which is installed at each periphery of the semiconductor region 3, given a charge transfer signal different in phase, and surrounding the semiconductor region 3.
Abstract translation: 距离图像传感器是在具有由多个二维排列单位（像素P）构成的摄像区域的半导体基板上设置的范围图像传感器，从而基于电荷量QL，QR输出获得范围图像 从单位。 其中一个单元设置有响应于入射光产生电荷的电荷产生区域（转移电极5之外的区域），至少两个半导体区域3，空间间隔开，以从电荷产生区域收集电荷;以及 传输电极5，其安装在半导体区域3的每个周边，给定相位不同的电荷转移信号，并且围绕半导体区域3。
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公开(公告)号：US08884394B2
公开(公告)日：2014-11-11
申请号：US13644605
申请日：2012-10-04
Applicant: Hamamatsu Photonics K.K.
Inventor： Mitsuhito Mase , Takashi Suzuki , Jun Hiramitsu
IPC: H01L31/0224
CPC classification number: G01C3/08 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14609 , H01L27/1461 , H01L27/14623 , H01L27/1464 , H01L27/14641
Abstract: A signal charge collecting region is disposed inside a charge generating region so as to be surrounded by the charge generating region, and collects signal charges from the charge generating region. An unnecessary charge collecting region is disposed outside the charge generating region so as to surround the charge generating region, and collects unnecessary charges from the charge generating region. A transfer electrode is disposed between the signal charge collecting region and the charge generating region, and causes the signal charges from the charge generating region to flow into the signal charge collecting region in response to an input signal. An unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region, and causes the unnecessary charges from the charge generating region to flow into the unnecessary charge collecting region in response to an input signal.
Abstract translation: 信号电荷收集区域设置在电荷产生区域内，以被电荷产生区域包围，并从电荷产生区域收集信号电荷。 不必要的电荷收集区域设置在电荷产生区域外部，以便围绕电荷产生区域，并从电荷产生区域收集不必要的电荷。 转移电极设置在信号电荷收集区域和电荷产生区域之间，并且响应于输入信号使来自电荷产生区域的信号电荷流入信号电荷收集区域。 不必要的电荷收集栅电极设置在不需要的电荷收集区域和电荷产生区域之间，并且响应于输入信号使来自电荷产生区域的不必要的电荷流入不需要的电荷收集区域。
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公开(公告)号：US12302018B2
公开(公告)日：2025-05-13
申请号：US17798999
申请日：2020-11-18
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito Mase , Hiroo Yamamoto , Harumichi Mori
IPC: H04N25/711 , H04N25/40
Abstract: Provided is a photosensor including a light receiving part generating electric charge according to incident light, a charge transfer gate configured to transfer the electric charge generated in the light receiving part, and a signal generation unit configured to generate a charge transfer signal applied to the charge transfer gate, in which the signal generation unit generates the charge transfer signal so that the charge transfer gate is brought into a charge transfer state in a first time range of a first period belonging to an n-th (n is an integer of 1 or more) frame and the charge transfer gate is brought into a charge transfer state in a second time range of a second period belonging to an m-th (m is an integer of 1 or more different from n) frame.
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公开(公告)号：US12098920B2
公开(公告)日：2024-09-24
申请号：US17798377
申请日：2021-01-21
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito Mase , Masatoshi Fujimoto , Tomofumi Suzuki
IPC: G01B9/02091 , G01N21/17 , H04N25/10 , H04N25/70 , G01N21/47
CPC classification number: G01B9/02091 , G01N21/17 , H04N25/10 , H04N25/70 , G01N2021/4761
Abstract: An optical coherence tomography device includes a light source, a mirror device including a movable mirror configured to perform a reciprocating operation, a support part configured to support an object, a beam splitter configured to generate interfering light, an optical sensor configured to detect the interfering light, and a control unit. Each of the plurality of pixels included in the optical sensor includes a light receiving part, a plurality of transfer gates, and a discharge gate. The control unit applies an electric signal to the optical sensor so that the plurality of transfer gates are sequentially brought into a charge transfer state in at least three time ranges separated from each other and the discharge gate is brought into a charge discharge state in a time range other than the at least three time ranges for each period of an interferogram signal of the interfering light.
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公开(公告)号：US09664780B2
公开(公告)日：2017-05-30
申请号：US14433066
申请日：2013-07-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito Mase , Jun Hiramitsu , Takashi Suzuki
CPC classification number: G01S7/4816 , G01S7/4863 , G01S17/08 , G01S17/89 , H01L27/14605 , H01L27/1461 , H01L27/14612
Abstract: A distance sensor includes: a light receiving area including a first longer side and a second longer side; a photo gate electrode arranged on the light receiving area; a plurality of signal charge collection regions along the first longer side; a plurality of signal charge collection regions along the second longer side; a plurality of transfer electrodes along the first longer side provided with charge transfer signals having mutually-differing phases; a plurality of transfer electrodes along the second longer side provided with the charge transfer signals having mutually-differing phases; and a potential adjusting means positioned between the first and second longer sides and raises potential of an area extending in a direction in which the first and second longer sides extend to be higher than potential of side areas of the first and second longer sides.
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