公开(公告)号：US20150380457A1

公开(公告)日：2015-12-31

申请号：US14768843

申请日：2014-02-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Terumasa NAGANO ,  Kazuhisa YAMAMURA ,  Kenichi SATO ,  Ryutaro TSUCHIYA

IPC: H01L27/146 ,  G01N23/04 ,  H01L31/0224 ,  H01L31/115 ,  G01T1/24 ,  G01T1/29

CPC classification number: H01L27/14663 ,  G01N23/046 ,  G01T1/241 ,  G01T1/2985 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14661 ,  H01L31/022408 ,  H01L31/115 ,  H01L2224/13

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

Abstract translation: 检测器的每个半导体芯片包括具有多个光电探测器单元的半导体衬底，形成在半导体衬底的前表面上的绝缘层，布置在绝缘层上的公共电极，用于将每个 光电检测器单元和公共电极，以及通过半导体衬底的通孔从公共电极延伸到半导体衬底的后表面的通孔。