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公开(公告)号：US09627196B2
公开(公告)日：2017-04-18
申请号：US14511199
申请日：2014-10-10
Applicant: Infineon Technologies AG
Inventor： Guenther Ruhl , Klemens Pruegl
CPC classification number: H01L21/02527 , C01B32/186 , H01L21/0237 , H01L21/02488 , H01L21/02614 , H01L21/02631 , H01L21/02664 , H01L21/02667 , H01L29/1606
Abstract: According to various embodiments, a method for processing a carrier may include: co-depositing at least one metal from a first source and carbon from a second source over a surface of the carrier to form a first layer; forming a second layer over the first layer, the second layer including a diffusion barrier material, wherein the solubility of carbon in the diffusion barrier material is less than in the at least one metal; and forming a graphene layer at the surface of the carrier from the first layer by a temperature treatment.
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公开(公告)号：US09606197B2
公开(公告)日：2017-03-28
申请号：US14830195
申请日：2015-08-19
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
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公开(公告)号：US20160372256A1
公开(公告)日：2016-12-22
申请号：US15256305
申请日：2016-09-02
Applicant: Infineon Technologies AG
Inventor： Gunther Mackh , Carsten Ahrens , Klemens Pruegl
IPC: H01F27/28 , H01F27/255 , H01L49/02 , H01F41/04
CPC classification number: H01F27/2804 , H01F5/00 , H01F17/0006 , H01F17/04 , H01F27/255 , H01F41/046 , H01F2017/048 , H01L23/5227 , H01L27/08 , H01L28/10 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48471 , H01L2924/00011 , H01L2924/01047 , H01L2924/30107 , H05K3/10 , Y10T29/49075 , Y10T29/49155 , H01L2924/00014 , H01L2924/00 , H01L2924/01005
Abstract: In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.
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公开(公告)号：US09423472B2
公开(公告)日：2016-08-23
申请号：US14972648
申请日：2015-12-17
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。
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公开(公告)号：US20160109536A1
公开(公告)日：2016-04-21
申请号：US14972648
申请日：2015-12-17
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。
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Patent Agency Ranking
16.发明申请公开(公告)号：US20230066358A1
公开(公告)日：2023-03-02
申请号：US17461117
申请日：2021-08-30
Applicant: Infineon Technologies AG
Inventor： Dieter Suess , Udo Ausserlechner , Armin Satz , Klemens Pruegl , Wolfgang Raberg , Milan Agrawal , Johannes Guettinger , Michael Kirsch
IPC: G01R33/07
Abstract: The described techniques facilitate the use of a magnetic field sensor that implements the same magnetic layer stack for the detection of the x, y, and z components of an external magnetic field. The sensor advantageously is insensitive to orthogonal stray fields and operates with a reduced offset compared to conventional magnetic field sensors. The linear regime implemented by the sensor to facilitate magnetic field detection may also be adjusted per application by tuning the current strength.
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公开(公告)号：US11346899B2
公开(公告)日：2022-05-31
申请号：US16028738
申请日：2018-07-06
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl
Abstract: A magnetoresistive sensor includes a first non-magnetic layer, a second non-magnetic layer, and a magnetic free bi-layer. The magnetic free bi-layer is disposed between first non-magnetic layer and the second non-magnetic layer, the magnetic free bi-layer including a first magnetic free layer coupled to a second magnetic free layer. The first magnetic free layer is coupled to the first non-magnetic layer, and the second magnetic free layer is coupled to the second non-magnetic layer. The second non-magnetic layer comprises a non-magnetic material having an atomic radius within 10% of an atomic radius of at least one of the first magnetic free layer and the second magnetic free layer.
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公开(公告)号：US10692921B2
公开(公告)日：2020-06-23
申请号：US16566171
申请日：2019-09-10
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
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19.发明授权公开(公告)号：US10585148B2
公开(公告)日：2020-03-10
申请号：US15375995
申请日：2016-12-12
Applicant: Infineon Technologies AG
Inventor： Anton Bachleitner Hofmann , Hubert Brueckl , Klemens Pruegl , Wolfgang Raberg , Armin Satz , Dieter Suess , Tobias Wurft
Abstract: An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). The magneto-resistive structure (500) also comprises a magnetic reference layer (506) having a non-closed flux reference magnetization pattern. The magnetic sensor device (500) further comprises a current generator (580) configured to generate an electric current in one or more layers of the magneto-resistive structure (501). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.
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公开(公告)号：US10411060B2
公开(公告)日：2019-09-10
申请号：US15586498
申请日：2017-05-04
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.
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