公开(公告)号：US20220085174A1

公开(公告)日：2022-03-17

申请号：US17532030

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L29/16 ,  H01L21/02 ,  H01L23/544 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

公开(公告)号：US11211459B2

公开(公告)日：2021-12-28

申请号：US16715439

申请日：2019-12-16

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L21/02 ,  H01L21/56 ,  H01L21/78 ,  H01L29/16 ,  H01L23/544 ,  H01L23/31

Abstract: An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.