公开(公告)号：US20180201511A1

公开(公告)日：2018-07-19

申请号：US15872772

申请日：2018-01-16

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Matthias Koenig

IPC: C01B32/194

CPC classification number: C01B32/194 ,  B81C1/00658 ,  C01B2204/02 ,  C01B2204/22 ,  G01R33/07 ,  H04R19/016

Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.

公开(公告)号：US20170050422A1

公开(公告)日：2017-02-23

申请号：US14828557

申请日：2015-08-18

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: B32B37/00 ,  C01B31/04 ,  B05D1/32

CPC classification number: B32B37/025 ,  B05D1/322 ,  B32B38/10 ,  B32B2307/202 ,  B32B2313/04 ,  B32B2457/00 ,  C01B32/194 ,  H01B1/04

Abstract: According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.

Abstract translation: 根据各种实施例，用于处理载体的方法可以包括：在载体上形成层结构，所述层结构包括支撑层和支撑层上的二维层; 其中所述层结构具有暴露所述载体的一部分的至少一个开口; 形成辅助层结构，其中所述辅助层结构至少部分地覆盖所述层结构并且至少部分地填充所述至少一个开口; 并移除层结构的支撑层。

公开(公告)号：US09461120B2

公开(公告)日：2016-10-04

申请号：US14633159

申请日：2015-02-27

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1606 ,  G01N27/4146 ,  H01L29/24 ,  H01L29/402 ,  H01L29/408 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66045 ,  H01L29/778

Abstract: According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer.

Abstract translation: 根据各种实施例，电子设备可以包括：包括二维材料的层; 在所述层的第一侧的电介质结构，其中所述电介质结构包括第一接触区域和第二接触区域，所述第一接触区域限定所述层的第一接触区域和所述第二接触区域限定所述第二接触区域的第二接触区域 并且所述第一接触区域和所述第二接触区域进一步限定所述层的所述第一接触区域和所述第二接触区域之间的所述层的器件区域; 第一电极和第二电极，设置在与第一侧相对的第二侧上，其中第一电极与层的第一接触区域直接物理接触，并且其中第二电极与第一电极直接物理接触 所述层的第二接触区域，其中所述电介质结构的所述第一接触区域和所述第二接触区域被配置为分别调节所述第二接触区域和所述第二接触区域中的所述二维材料的电特性 使得层的第一接触区域和第二接触区域中的二维材料的电特性不同于层的器件区域中的二维材料的电特性。

公开(公告)号：US20160254355A1

公开(公告)日：2016-09-01

申请号：US14633159

申请日：2015-02-27

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1606 ,  G01N27/4146 ,  H01L29/24 ,  H01L29/402 ,  H01L29/408 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66045 ,  H01L29/778

Abstract: According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer.

Abstract translation: 根据各种实施例，电子设备可以包括：包括二维材料的层; 在所述层的第一侧的电介质结构，其中所述电介质结构包括第一接触区域和第二接触区域，所述第一接触区域限定所述层的第一接触区域和所述第二接触区域限定所述第二接触区域的第二接触区域 并且所述第一接触区域和所述第二接触区域进一步限定所述层的所述第一接触区域和所述第二接触区域之间的所述层的器件区域; 第一电极和第二电极，设置在与第一侧相对的第二侧上，其中第一电极与层的第一接触区域直接物理接触，并且其中第二电极与第一电极直接物理接触 所述层的第二接触区域，其中所述电介质结构的所述第一接触区域和所述第二接触区域被配置为分别调节所述第二接触区域和所述第二接触区域中的所述二维材料的电特性 使得层的第一接触区域和第二接触区域中的二维材料的电特性不同于层的器件区域中的二维材料的电特性。