公开(公告)号：US11430943B2

公开(公告)日：2022-08-30

申请号：US16022561

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Kevin O'Brien ,  Kaan Oguz ,  Noriyuki Sato ,  Charles Kuo ,  Mark Doczy

IPC: H01L43/02 ,  H01F10/32 ,  G11C11/16 ,  H01L43/12 ,  H01F41/30 ,  H01L27/22 ,  H01L43/10

Abstract: A magnetic tunneling junction (MTJ) memory device including a free and fixed (reference) magnet between first and second electrodes, and a synthetic antiferromagnet structure (SAF) structure between the fixed magnet and one of the electrodes. The SAF structure includes a magnetic skyrmion. Two magnetic skyrmions within a SAF structure may have opposing polarity. A SAF structure may further include a coupling layer between two magnetic layers, as well as interface layers separated from the coupling layer by one of the magnetic layers. The coupling layer may have a spin-orbit coupling effect on the magnetic layers that is of a sign opposite that of the interface layers, for example to promote formation of the magnetic skyrmions.

公开(公告)号：US20200005861A1

公开(公告)日：2020-01-02

申请号：US16022547

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Kevin O'Brien ,  Brian Doyle ,  Kaan Oguz ,  Noriyuki Sato ,  Charles Kuo ,  Mark Doczy

IPC: G11C11/56 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: A MTJ device includes a free (storage) magnet and fixed (reference) magnet between first and second electrodes, and a programmable booster between the free magnet and one of the electrodes. The booster comprises a magnetic material layer. The booster may further comprise an interface layer that supports the formation of a skyrmion spin texture, or a stable ferromagnetic domain, within the magnetic material layer. A programming current between two circuit nodes may be employed to set a position of the skyrmion or magnetic domain within the magnetic material layer to be more proximal to, or more distal from, the free magnet. The position of the skyrmion or magnetic domain to the MTJ may modulate TMR ratio of the MTJ device. The TMR ratio modulation may be employed to discern more than two states of the MTJ device. Such a multi-level device may, for example, be employed to store 2 bits/cell.

公开(公告)号：US20190304653A1

公开(公告)日：2019-10-03

申请号：US15942434

申请日：2018-03-31

Applicant: Intel Corporation

Inventor： Kaan Oguz ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Charles Kuo ,  Mark Doczy ,  Kevin O'Brien

IPC: H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H01L27/22

Abstract: A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit torque material, where the SOT material includes iridium and manganese and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet structure electrode, a fixed layer and a tunnel barrier between the free layer and the fixed layer and a SAF structure above the fixed layer. The Ir—Mn SOT material and the free magnet have an in-plane magnetic exchange bias.

公开(公告)号：US20190189913A1

公开(公告)日：2019-06-20

申请号：US16329169

申请日：2016-09-27

Applicant: Intel Corporation

Inventor： Brian Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Kevin O'Brien ,  Mark Doczy ,  Charles Kuo

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32

CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a magnetic tunnel junction of the spin transfer torque memory device is formed with Heusler alloys as the fixed and free magnetic layers and a tunnel barrier layer disposed between and abutting the fixed Heusler magnetic layer and the free Heusler magnetic layer, wherein the tunnel barrier layer is lattice matched to the free Heusler magnetic layer. In one embodiment, the tunnel barrier layer may be a strontium titanate layer.