INTERFACIAL LAYER FOR HIGH RESOLUTION LITHOGRAPHY (HRL) AND HIGH SPEED INPUT/OUTPUT (IO OR I/O) ARCHITECTURES

    公开(公告)号:US20190320537A1

    公开(公告)日:2019-10-17

    申请号:US15954040

    申请日:2018-04-16

    Abstract: Embodiments described herein are directed to interfacial layers and techniques of forming such interfacial layers. An interfacial layer having one or more light absorbing molecules is on a metal layer. The light absorbing molecule(s) may comprise a moiety exhibiting light absorbing properties. The interfacial layer can assist with improving adhesion of a resist layer to the metal layer and with improving use of one or more lithography techniques to fabricate interconnects and/or features using the resist and metal layers for a package substrate, a semiconductor package, or a PCB. For one embodiment, the interfacial layer includes, but is not limited to, an organic interfacial layer. Examples of organic interfacial layers include, but are not limited to, self-assembled monolayers (SAMs), constructs and/or variations of SAMs, organic adhesion promotor moieties, and non-adhesion promoter moieties.

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