Abstract:
An array substrate having a display region and a peripheral circuit region adjacent to the display region is provided. The array substrate includes a pixel array, a plurality of test shorting bars and a plurality of wires. The pixel array is disposed in the display region. The test shorting bars are disposed in the peripheral circuit region. The wires electrically connected with the pixel array are disposed in the peripheral circuit region. Specially, at least one wire and the test shorting bar share a part for connecting each other and the part forms a common trace.
Abstract:
A display panel includes an active device array substrate, an opposite substrate, and a liquid crystal layer. The active device array substrate includes a substrate and further includes a pixel array, signal lines, and first and second repairing lines all disposed on the substrate. The signal lines electrically connect the pixel array. The first repairing line includes first and second line segments respectively located on first and second sides of the pixel array. The first side is substantially perpendicular to the second side. The first and second line segments are electrically connected. The second repairing line includes third and fourth line segments respectively located on third and second sides of the pixel array. The third side is substantially parallel to the first side. The fourth and third line segments are electrically connected. The opposite substrate above the active device array substrate does not cover the first and third line segments.
Abstract:
A semiconductor chip includes a seal ring adjacent to edges of the semiconductor chip; an opening extending from a top surface to a bottom surface of the seal ring, wherein the opening has a first end on an outer side of the seal ring and a second end on an inner side of the seal ring; and a moisture barrier having a sidewall parallel to a nearest side of the seal ring, wherein the moisture barrier is adjacent the seal ring and has a portion facing the opening.
Abstract:
An interconnect structure of an integrated circuit having improved reliability and a method for forming the same are provided. The method includes providing a substrate, forming a dielectric layer overlying the substrate, performing a first shrinking process, wherein the dielectric layer shrinks and has a first shrinkage rate, forming a conductive feature in the dielectric layer after the step of performing the first shrinking process, and performing a second shrinking process after the step of forming the conductive feature, wherein the dielectric layer substantially shrinks and has a second shrinkage rate.
Abstract:
A method for measuring a property of interconnections is provided. The method includes the following steps. A plurality of interconnection test patterns are provided. A pad to which the plurality of interconnection test patterns are parallelly connected is formed. At least one resistor is formed between at least one of the plurality of interconnection test patterns and the pad. The property of the plurality of interconnection test patterns is measured by applying a current, a voltage and/or a mechanical stress to the pad.
Abstract:
A method for surface activation on the metallization of electronic devices is provided. It uses plasma-immersion ion implantation and electroless plating to implant the seeds onto the diffusion barrier layer as catalyst for the electroless Cu plating to accomplish the ULSI interconnect metallization. It achieves electroless Cu plating in the deep 100 nm scaled line-width ULSI interconnect metallization by the Pd plasma implantation catalytic treatment. The method can fill the 100 nm line-width vias and trenches for gaining high quality electroless plated metal interconnects, and substitute for the traditional wet activation by SnCl2 and PdCl2 solution. For the plasma implanted seeds and electroless copper techniques, good Cu step coverage and gap-filling capability are observed in the trench and via metallization process with high adhesive strength. After thermal treatment, no obvious interfacial diffusion induced electric failure is found in the interface of the Cu/(implanted Pd)/TaN/FSG assembly. Good electric and interfacial structure reliability are observed in the process, too.
Abstract:
A touch panel includes a touch sensor, a liquid crystal panel, and a reverse circuit. The reverse circuit receives common voltage ripples of the liquid crystal panel, and outputs reversed common voltage ripples after reversing the common voltage ripples. After the touch sensor receives the reversed common voltage ripples, the touch sensor outputs a sensing signal according to the reversed common voltage ripples.
Abstract:
A foot plate device is connected to a prosthetic lower leg of an artificial foot, and includes a flexible foot plate. The foot plate has a front plate section, an inclined intermediate plate section extending rearwardly and upwardly from a rear end of the front plate section, and a rear plate section extending rearwardly from a rear end of the intermediate plate section and generally parallel to the front plate section. The front plate section has at least one open-ended slot formed vertically therethrough and extending across the front plate section along a longitudinal direction of the foot plate, so as to divide the front plate section into two force-receiving plate portions. The rear plate section is connected with the prosthetic lower leg.
Abstract:
The present invention relates to a pull-down control circuit and a shift register of using same. In one embodiment, the pull-down control circuit includes a release circuit and four transistors T4, T5, T6 and T7 electrically coupled to each other. The release circuit is adapted for causing the transistor T5 to be turned on and off alternately, thereby substantially reducing the stress thereon, improving the reliability and prolonging the lifetime of the shift register.
Abstract:
A semiconductor chip includes a seal ring adjacent to edges of the semiconductor chip; an opening extending from a top surface to a bottom surface of the seal ring, wherein the opening has a first end on an outer side of the seal ring and a second end on an inner side of the seal ring; and a moisture barrier having a sidewall parallel to a nearest side of the seal ring, wherein the moisture barrier is adjacent the seal ring and has a portion facing the opening.