Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar and method of manufacturing polysilicon using the same
    11.
    发明授权
    Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar and method of manufacturing polysilicon using the same 有权
    使用虚拟棒制造基于多晶硅的电子束熔化的装置和使用其制造多晶硅的方法

    公开(公告)号:US08997524B2

    公开(公告)日:2015-04-07

    申请号:US13464488

    申请日:2012-05-04

    Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

    Abstract translation: 制造高纯度多晶硅的方法和装置。 该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元,其放置在对应于第一电子枪的第一电子束照射区域上,并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。 单向凝固单元在其中设置有向下驱动的起始块,以沿向下方向转移熔融硅,并在其下侧形成有冷却通道。 起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

    Apparatus for manufacturing high purity polysilicon using electron-beam melting and method of manufacturing high purity polysilicon using the same
    12.
    发明授权
    Apparatus for manufacturing high purity polysilicon using electron-beam melting and method of manufacturing high purity polysilicon using the same 有权
    使用电子束熔化制造高纯度多晶硅的装置和使用其制造高纯度多晶硅的方法

    公开(公告)号:US08794035B2

    公开(公告)日:2014-08-05

    申请号:US13464416

    申请日:2012-05-04

    CPC classification number: C01B33/037 C30B11/003 C30B13/22 C30B29/06

    Abstract: Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.

    Abstract translation: 用于制造高纯度多晶硅的装置和方法。 该装置包括保持真空气氛的真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 放置在对应于第一电子枪的第一电子束照射区域上的硅熔融单元,其中粉状原料硅由第一电子束放置和熔化; 以及放置在与第二电子枪相对应的第二电子束照射区域上的单向凝固单元,并且经由流道连接到硅熔融单元。 单向凝固单元在其下部形成有冷却通道,并且在其中设置有向下驱动的起始块。

    Processing apparatus
    13.
    发明授权
    Processing apparatus 有权
    处理装置

    公开(公告)号:US08758513B2

    公开(公告)日:2014-06-24

    申请号:US11639224

    申请日:2006-12-15

    CPC classification number: H01L21/67173 C23C14/50 C23C14/568

    Abstract: A processing apparatus includes a loading chamber; a buffer chamber connected to the loading chamber; a first process chamber connected to the buffer chamber; and an unloading chamber connected to the first process chamber, wherein a processing path through the processing apparatus is a forward in-line path in a direction through the loading chamber, the buffer chamber, the first process chamber, and the unloading chamber.

    Abstract translation: 一种处理装置,包括装载室; 连接到所述装载室的缓冲室; 连接到缓冲室的第一处理室; 以及连接到所述第一处理室的卸载室,其中通过所述处理装置的处理路径是沿着穿过所述装载室,所述缓冲室,所述第一处理室和所述卸载室的方向的前向一线路径。

    APPARATUS FOR MANUFACTURING POLYSILICON BASED ELECTRON-BEAM MELTING USING DUMMY BAR AND METHOD OF MANUFACTURING POLYSILICON USING THE SAME
    14.
    发明申请
    APPARATUS FOR MANUFACTURING POLYSILICON BASED ELECTRON-BEAM MELTING USING DUMMY BAR AND METHOD OF MANUFACTURING POLYSILICON USING THE SAME 有权
    用于制造基于多晶硅的电子束熔融的装置和使用其制造多晶硅的方法

    公开(公告)号:US20130291596A1

    公开(公告)日:2013-11-07

    申请号:US13464488

    申请日:2012-05-04

    Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

    Abstract translation: 制造高纯度多晶硅的方法和装置。 该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元,其放置在对应于第一电子枪的第一电子束照射区域上,并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。 单向凝固单元在其中设置有向下驱动的起始块,以沿向下方向转移熔融硅,并在其下侧形成有冷却通道。 起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

    Methods for preparing composites of substrate-molecular sieve
    18.
    发明授权
    Methods for preparing composites of substrate-molecular sieve 有权
    制备底物分子筛复合材料的方法

    公开(公告)号:US08771639B2

    公开(公告)日:2014-07-08

    申请号:US12311486

    申请日:2008-01-04

    CPC classification number: C01B39/02

    Abstract: The present invention relates to a method for preparing composites of substrate-molecular sieve, in particular, to a method for preparing a composite of substrate-molecular sieve, which comprises applying a physical pressure to molecular sieve crystals against a substrate to form a chemical bond between the molecular sieve crystal and the substrate. The present invention requiring no solvents, reactors and other equipments enables molecular sieve crystals to be stably attached to the surface of substrates through various chemical bonds, particularly ionic present invention ensures the synthesis of substrate-molecular sieve composites with enhanced attachment rate, degree of lateral close packing (DCP) and attachment strength in more time-saving and energy-saving manners. The present method works well for molecular sieve crystals with lager sizes (e.g., more than 3 μm) with no generation of parasitic crystals. Furthermore, the present invention shows excellent applicability to large substrates, enabling the mass production of substrate-molecular sieve composites.

    Abstract translation: 本发明涉及一种制备底物分子筛复合材料的方法,特别涉及一种制备底物 - 分子筛复合材料的方法,该方法包括向分子筛晶体施加物理压力以抵抗基质以形成化学键 在分子筛晶体和基底之间。 不需要溶剂,反应器等设备的本发明使得分子筛晶体能够通过各种化学键稳定地附着于基底表面,特别是离子本发明确保了底物分子筛复合物的合成,具有增强的附着率, 紧密包装(DCP)和附件强度更节省时间和节能的方式。 本发明的方法适用于具有较大尺寸(例如大于3μm)的分子筛晶体,而不产生寄生晶体。 此外,本发明对大基材显示出优异的适用性,能够批量生产基质分子筛复合材料。

    Method of object tracking in 3D space based on particle filter using acoustic sensors
    19.
    发明授权
    Method of object tracking in 3D space based on particle filter using acoustic sensors 有权
    基于使用声学传感器的粒子滤波器在3D空间中对象跟踪的方法

    公开(公告)号:US08213265B2

    公开(公告)日:2012-07-03

    申请号:US12918607

    申请日:2008-04-04

    CPC classification number: G01S3/8006

    Abstract: There is provided a method of tracking an object in a three-dimensional (3-D) space by using particle filter-based acoustic sensors, the method comprising selecting two planes in the 3-D space; executing two-dimensional (2-D) particle filtering on the two selected planes, respectively; and associating results of the 2-D particle filtering on the respective planes.

    Abstract translation: 提供了一种通过使用基于粒子滤波器的声学传感器来跟踪三维(3-D)空间中的对象的方法,该方法包括在3-D空间中选择两个平面; 分别在两个选定的平面上执行二维(2-D)粒子滤波; 并且将各个平面上的二维粒子滤波的结果相关联。

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