公开(公告)号：US08467637B2

公开(公告)日：2013-06-18

申请号：US12598162

申请日：2008-04-30

Applicant: Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

Inventor： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

IPC: G02B6/12 ,  G02B6/26 ,  H01L29/47

CPC classification number: H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

Abstract: In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

Abstract translation: 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

公开(公告)号：US20110311178A1

公开(公告)日：2011-12-22

申请号：US13202680

申请日：2010-02-18

Applicant: Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

Inventor： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC: G02F1/025

CPC classification number: G02F1/025

Abstract: The components are a lower clad layer (102), a first silicon layer (103) that is formed on the lower clad layer (102) as a single body made of silicon of a first conduction type and has a slab region (105) that is disposed at a core (104) and on both sides of the core (104) and connects to the core, a concave section (104a) that is formed in the top surface of the core (104), and a second silicon layer (109) of a second conduction type that is formed inside the concave section (104a) with an intervening dielectric layer (108) to fill the inside of the concave section (104a).

Abstract translation: 这些部件是下包层（102），第一硅层（103），其形成在下包层（102）上，作为由第一导电类型的硅制成的单体，并具有板区域（105） 设置在芯部（104）处并且在芯部（104）的两侧并且连接到芯部，形成在芯部（104）的顶表面中的凹部（104a）和第二硅层（ 109），其形成在所述凹部（104a）的内部，并具有填充所述凹部（104a）的内部的中间介电层（108）。

公开(公告)号：US08078021B2

公开(公告)日：2011-12-13

申请号：US12519693

申请日：2007-12-12

Applicant: Jun Ushida

Inventor： Jun Ushida

IPC: G02B6/26 ,  G02B6/42

CPC classification number: G02B6/125 ,  G02B6/1228 ,  G02B6/14 ,  G02B2006/12147

Abstract: A waveguide connecting structure includes a light branching element (111) for branching light from an input optical waveguide (201) including one core into two branched light components having the same optical power and the same phase, and a twin-arm waveguide (113) including a pair of arm waveguides (113A, 113B) for outputting the light components branched by the light branching element to a slot waveguide (202) including two cores arranged in parallel at a narrow spacing. The pair of arm waveguides have cores formed in a cladding on a substrate and having a refractive index higher than that of the cladding, and are formed such that the spacing between them gradually narrows and becomes equal to the core spacing of the slot waveguide from the core input ends into which the branched light components enter toward the core output ends from which the light components are output to the slot waveguide.

Abstract translation: 波导连接结构包括：光分支元件（111），用于将包括一芯的输入光波导（201）的光分为具有​​相同光功率和相同相位的两个分支光分量;以及双臂波导（113） 包括用于将由光分支元件分支的光分量输出到包括以窄间隔平行布置的两个芯的狭槽波导（202）的一对臂波导（113A，113B）。 一对臂波导具有形成在基板上的包层中并且折射率高于包层的折射率的芯，并且形成为使得它们之间的间隔逐渐变窄并且变得等于槽波导的芯间距 其中分支光分量进入其中光分量被输出到槽波导的芯输出端的核心输入端。

公开(公告)号：US20110002582A1

公开(公告)日：2011-01-06

申请号：US12919461

申请日：2009-02-10

Applicant: Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

Inventor： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

IPC: G02B6/12 ,  H01L21/02

CPC classification number: H01L25/0657 ,  H01L23/48 ,  H01L23/645 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/167 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/41 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.

Abstract translation: 提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。 半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有 功能与光和电之间的信号转换有关。 半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。

公开(公告)号：US20100092132A1

公开(公告)日：2010-04-15

申请号：US12519693

申请日：2007-12-12

Applicant: Jun Ushida

Inventor： Jun Ushida

IPC: G02B6/28

CPC classification number: G02B6/125 ,  G02B6/1228 ,  G02B6/14 ,  G02B2006/12147

Abstract: A waveguide connecting structure includes a light branching element (111) for branching light from an input optical waveguide (201) including one core into two branched light components having the same optical power and the same phase, and a twin-arm waveguide (113) including a pair of arm waveguides (113A, 113B) for outputting the light components branched by the light branching element to a slot waveguide (202) including two cores arranged in parallel at a narrow spacing. The pair of arm waveguides have cores formed in a cladding on a substrate and having a refractive index higher than that of the cladding, and are formed such that the spacing between them gradually narrows and becomes equal to the core spacing of the slot waveguide from the core input ends into which the branched light components enter toward the core output ends from which the light components are output to the slot waveguide.

Abstract translation: 波导连接结构包括：光分支元件（111），用于将包括一芯的输入光波导（201）的光分为具有​​相同光功率和相同相位的两个分支光分量;以及双臂波导（113） 包括用于将由光分支元件分支的光分量输出到包括以窄间隔平行布置的两个芯的狭槽波导（202）的一对臂波导（113A，113B）。 一对臂波导具有形成在基板上的包层中并且折射率高于包层的折射率的芯，并且形成为使得它们之间的间隔逐渐变窄并且变得等于槽波导的芯间距 其中分支光分量进入其中光分量被输出到槽波导的芯输出端的核心输入端。

公开(公告)号：US20090142018A1

公开(公告)日：2009-06-04

申请号：US12320428

申请日：2009-01-26

Applicant: Akiko Gomyo ,  Jun Ushida

Inventor： Akiko Gomyo ,  Jun Ushida

IPC: G02B6/26

CPC classification number: B82Y20/00 ,  G02B6/1225 ,  G02B6/1228

Abstract: Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.

Abstract translation: 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。

公开(公告)号：US08873895B2

公开(公告)日：2014-10-28

申请号：US13582841

申请日：2011-03-01

Applicant: Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

Inventor： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

IPC: G02F1/035 ,  H01L21/02

CPC classification number: G02F1/035 ,  G02F1/025 ,  H01L21/02

Abstract: To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.

Abstract translation: 提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。 光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层 放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。

公开(公告)号：US20130170793A1

公开(公告)日：2013-07-04

申请号：US13823027

申请日：2011-09-21

Applicant: Jun Ushida ,  Shigeru Nakamura

Inventor： Jun Ushida ,  Shigeru Nakamura

IPC: G02B6/26

CPC classification number: G02B6/26 ,  G02B6/1228 ,  G02B6/305

Abstract: The present invention provides a small optical waveguide structure capable of converting the spot size of light, and capable of reducing the conversion loss when compared under the condition of the same waveguide length and performing an optical conversion with high efficiency. An optical waveguide structure (100) includes a base waveguide (110) including a taper section (111) whose width becomes continuously narrower from one side toward another side, and a narrow-width section (112) that is consecutively connected to a narrow-width side of the taper section (111) and extends toward the another side. In the optical waveguide structure (100), at least three-layered upper waveguides (121 to 123) each of which has a planar shape smaller than the taper section (111) and includes a planar-view-roughly-wedge-shaped section whose width becomes continuously narrower from the one side toward the another side at least on a tip side are stacked above the taper section (111) of the base waveguide (110) in such a manner that the planar shape becomes successively smaller from the base waveguide side (110).

Abstract translation: 本发明提供了一种能够转换光斑尺寸的小型光波导结构，并且在相同波导长度的条件下进行比较并能够以高效率进行光转换时，能够降低转换损耗。 光波导结构（100）包括：基底波导（110），其包括宽度从一侧朝向另一侧连续变窄的锥形部（111），以及窄宽度部（112），其连续地连接到狭窄部 锥形部分（111）的宽度侧并且朝向另一侧延伸。 在光波导结构（100）中，至少三层上波导（121〜123）具有比锥形部（111）小的平面形状，并且具有俯视大致楔形的截面， 宽度从一侧朝向另一侧连续变窄，至少在前端侧以基板波导（110）的锥形部（111）的上方层叠，使得平面形状从基底波导侧连续变小 （110）。

公开(公告)号：US08422837B2

公开(公告)日：2013-04-16

申请号：US12919546

申请日：2009-02-26

Applicant: Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

Inventor： Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

IPC: H01L33/62

CPC classification number: G02B6/12002 ,  G02B6/43 ,  H01L21/76898 ,  H01L23/481 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/80001 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.

Abstract translation: 半导体器件包括具有用于处理电信号的半导体集成电路的半导体层，半导体衬底和用于发射光信号的光互连层的半导体层。 通过来自半导体层的电信号执行在光学互连层中发送的光信号的调制的控制，并且通过在光学互连层中的光的接收而产生的电信号被传输到半导体层。 光学互连层设置在半导体衬底的下侧。

公开(公告)号：US20120257850A1

公开(公告)日：2012-10-11

申请号：US13395329

申请日：2010-06-08

Applicant: Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

Inventor： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC: G02F1/035

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/105

Abstract: A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.

Abstract translation: 提供了一种小型化的低功率电光调制器，其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。 电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导，并且半导体层8和9可连接到 分别经由高掺杂部分4和10的外部端子。 在具有电介质膜11的半导体层8和9的接触表面附近的区域中，通过来自外部端子的电信号累积，去除或反转自由载流子，并且由此使自由载流子的浓度 调制光信号的电场区域，使得可以调制光信号的相位。 半导体层8和9中的至少一个比层叠部分宽。 高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。