公开(公告)号：US20150083186A1

公开(公告)日：2015-03-26

申请号：US14478252

申请日：2014-09-05

Applicant: Kabushiki Kaisha Toshiba

Inventor： Soichiro SHIBASAKI ,  Kazushige YAMAMOTO ,  Hiroki HIRAGA ,  Naoyuki NAKAGAWA ,  Mutsuki YAMAZAKI ,  Shinya SAKURADA ,  Michihiko INABA ,  Hitomi SAITO

IPC: H01L31/0725

CPC classification number: H01L31/0725 ,  H01L31/043 ,  H01L31/0682 ,  Y02E10/547

Abstract: A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.

Abstract translation: 实施例的多结太阳能电池包括：第一太阳能电池，其包括第一光电转换装置，包括串联连接并具有背接触的多个第二光电转换装置的第二太阳能电池以及第一太阳能电池之间的绝缘层 电池和第二太阳能电池。 在串联连接的第二光电转换装置之间设置器件隔离区。

公开(公告)号：US20210013360A1

公开(公告)日：2021-01-14

申请号：US17015490

申请日：2020-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

Inventor： Soichiro SHIBASAKI ,  Yuya HONISHI ,  Mutsuki YAMAZAKI ,  Naoyuki NAKAGAWA ,  Sara YOSHIO ,  Yoshiko HIRAOKA ,  Kazushige YAMAMOTO

IPC: H01L31/18 ,  H01L31/076 ,  H01L31/046

Abstract: A method for manufacturing a stacked thin film, includes forming a photoelectric conversion layer on a first transparent electrode by sputtering using a target mainly composed of copper in an oxygen containing atmosphere. An oxygen partial pressure of the sputtering is in a range of 0.01 [Pa] or more and 4.8 [Pa] or less, and 0.24×d [Pa] or more and 2.4×d [Pa] or less when a deposition rate is d [μm/min], in formation of the photoelectric conversion layer. A sputtering temperature is 300° C. or more and 600° C. or less, in formation of the photoelectric conversion layer.

公开(公告)号：US20200006589A1

公开(公告)日：2020-01-02

申请号：US16567684

申请日：2019-09-11

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

Inventor： Kazushige YAMAMOTO ,  Soichiro SHIBASAKI ,  Mutsuki YAMAZAKI ,  Yuya HONISHI

IPC: H01L31/0725 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/075 ,  H01L31/032

Abstract: A solar cell of an embodiment includes: a substrate; an n-electrode; an n-type layer; a p-type light absorption layer which is a semiconductor of a Cu-based oxide; and a p-electrode. The n-electrode is disposed between the substrate and the n-type layer. The n-type layer is disposed between the n-electrode and the p-type light absorption layer. The p-type light absorption layer is disposed between the n-type layer and the p-electrode. The n-type layer is disposed closer to a light incident side than the p-type light absorption layer. The substrate is a single substrate included in the solar cell.

公开(公告)号：US20170077327A1

公开(公告)日：2017-03-16

申请号：US15254327

申请日：2016-09-01

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroki HIRAGA ,  Naoyuki NAKAGAWA ,  Soichiro SHIBASAKI ,  Hitomi SAITO ,  Miyuki SHIOKAWA ,  Mutsuki YAMAZAKI ,  Kazushige YAMAMOTO

IPC: H01L31/032 ,  H01L31/046 ,  H01L31/0687 ,  H01L31/0224

CPC classification number: H01L31/0323 ,  H01L31/022425 ,  H01L31/046 ,  H01L31/0687 ,  Y02E10/541 ,  Y02E10/544

Abstract: A photoelectric conversion element of an embodiment includes a substrate, a transparent first electrode on the substrate, a second electrode, and a light absorbing layer of a homo-junction type interposed between the first electrode and the second electrode. The light absorbing layer includes a p-type region on the second electrode side and an n-type region on the first electrode side. The n-type region has an n-type dopant. The photoelectric conversion element has a boundary surface between the light absorbing layer on the n-type region side and the first electrode.

Abstract translation: 实施例的光电转换元件包括衬底，衬底上的透明第一电极，第二电极和插入在第一电极和第二电极之间的均匀接合型光吸收层。 光吸收层包括第二电极侧的p型区域和第一电极侧的n型区域。 n型区域具有n型掺杂剂。 光电转换元件具有在n型区域侧的光吸收层与第一电极之间的边界面。

公开(公告)号：US20160087127A1

公开(公告)日：2016-03-24

申请号：US14854431

申请日：2015-09-15

Applicant: Kabushiki Kaisha Toshiba

Inventor： Naoyuki NAKAGAWA ,  Soichiro SHIBASAKI ,  Hiroki HIRAGA ,  Hitomi SAITO ,  Mutsuki YAMAZAKI ,  Kazushige YAMAMOTO ,  Shinya SAKURADA ,  Michihiko INABA

IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/0392 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/0376 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

Abstract: A photoelectric conversion device of an embodiment has a substrate, a bottom electrode comprising an electrode layer on the substrate and an intermediate interface layer, a light absorbing layer on the intermediate interface layer. The electrode layer comprises Mo or W. The intermediate interface layer is a compound thin film of a compound comprising Mo or W and at least one element X selected from the group consisting of S, Se, and Te. The intermediate interface layer has a crystal phase and an amorphous phase with which the crystal phase is covered.

Abstract translation: 实施例的光电转换装置具有基板，在基板上包括电极层的底电极和中间界面层，中间界面层上的光吸收层。 电极层包括Mo或W.中间界面层是包含Mo或W的化合物的复合薄膜和选自S，Se和Te的至少一种元素X. 中间界面层具有晶相和覆盖晶相的非晶相。

公开(公告)号：US20160087118A1

公开(公告)日：2016-03-24

申请号：US14854389

申请日：2015-09-15

Applicant: Kabushiki Kaisha Toshiba

Inventor： Soichiro SHIBASAKI ,  Kazushige YAMAMOTO ,  Hiroki HIRAGA ,  Naoyuki NAKAGAWA ,  Mutsuki YAMAZAKI ,  Hitomi SAITO ,  Shinya SAKURADA ,  Michihiko INABA

IPC: H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/022475 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541

Abstract: A photoelectric conversion device of an embodiment has a bottom electrode, an intermediate layer on the bottom electrode, a p-type light absorbing layer on the intermediate layer, and an n-type layer on the p-type light absorbing layer. The bottom electrode is a first metal film or a semiconductor film. When the bottom electrode is a metal film, the intermediate layer comprises an oxide film or a sulfide film. When the bottom electrode is a semiconductor film, the intermediate layer comprises a second metal film and an oxide film or a sulfide film on the second metal film.

Abstract translation: 实施例的光电转换装置具有底电极，底电极上的中间层，中间层上的p型光吸收层和p型光吸收层上的n型层。 底部电极是第一金属膜或半导体膜。 当底部电极是金属膜时，中间层包括氧化膜或硫化物膜。 当底部电极是半导体膜时，中间层在第二金属膜上包括第二金属膜和氧化膜或硫化物膜。