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公开(公告)号：US20240053687A1
公开(公告)日：2024-02-15
申请号：US17885909
申请日：2022-08-11
Applicant: KLA Corporation
Inventor： Vladimir Levinski , Daria Negri , Amnon Manassen
CPC classification number: G03F7/70633 , G01N21/9501 , G03F7/70683
Abstract: An overlay metrology target may include grating-over-grating structures formed from a lower grating structure with a first coarse pitch in a first sample layer and an upper grating structure with a second coarse pitch in a second sample layer, where the upper and lower grating structures overlap on the sample. At least one of the upper grating structure or the lower grating structure may include features with a fine pitch smaller than a wavelength of an illumination beam and arranged to rotate first-order diffraction of the illumination beam associated with at least one of the first or second coarse pitches with respect to at least one of specular reflection from a top surface of the sample or zero-order diffraction from the one or more grating structures. Overlay between the first and second layers of the sample is determinable from an image of the grating structures based on the first-order diffraction.
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公开(公告)号：US20230194976A1
公开(公告)日：2023-06-22
申请号：US17769054
申请日：2022-04-07
Applicant: KLA Corporation
Inventor： Vladimir Levinski
IPC: G03F1/42 , H01L21/027
CPC classification number: G03F1/42 , H01L21/0274
Abstract: A method for semiconductor metrology includes depositing a first film layer on a semiconductor substrate and a second film layer overlying the first film layer. The first and second film layers are patterned to create an overlay target having a specified geometrical form by using a projection system having a predefined resolution limit to project optical radiation onto the semiconductor substrate through at least one mask. The mask contains target features having target feature dimensions no less than the predefined resolution limit in an arrangement corresponding to the specified geometrical form of the overlay target and assist features interleaved with the target features and having at least one assist feature dimension that is less than the predefined resolution limit.
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公开(公告)号：US20230051705A1
公开(公告)日：2023-02-16
申请号：US17850888
申请日：2022-06-27
Applicant: KLA Corporation
Inventor： Daniel Kandel , Guy Cohen , Dana Klein , Vladimir Levinski , Noam Sapiens , Alex Shulman , Vladimir Kamenetsky , Eran Amit , Irina Vakshtein
Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.
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公开(公告)号：US20220291143A1
公开(公告)日：2022-09-15
申请号：US17243912
申请日：2021-04-29
Applicant: KLA Corporation
Inventor： Amnon Manassen , Isaac Salib , Raviv YOHANAN , Diana Shaphirov , Eitan Hajaj , Vladimir Levinski , Avi Abramov , Michael Shentcis , Ariel Hildesheim , Yoav Grauer , Shlomo Eisenbach , Etay Lavert , Iftach Nir
IPC: G01N21/956 , G01B11/27 , G03F7/20 , G01N21/35
Abstract: An optical metrology tool may include one or more illumination sources to generate illumination having wavelengths both within a short-wave infrared (SWIR) spectral range and outside the SWIR spectral range, illumination optics configured to direct the illumination to a sample, a first imaging channel including a first detector configured to image the sample based on a first wavelength range including at least some wavelengths in the SWIR spectral range, a second imaging channel including a second detector configured to image the sample based on a second wavelength range including at least some wavelengths outside the SWIR spectral range, and a controller. The controller may receive first images of the sample from the first detector, receive second images of the sample from the second detector, and generate an optical metrology measurement of the sample based on the first and second images.
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公开(公告)号：US11164307B1
公开(公告)日：2021-11-02
申请号：US16935117
申请日：2020-07-21
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker , Evgeni Gurevich , Vladimir Levinski , Alexander Svizher
Abstract: A metrology system and metrology methods are disclosed. The metrology system includes an illumination sub-system, a collection sub-system, a detector, and a controller. The controller is configured to receive an image of an overlay target on a sample, determine an apparent overlay between two working zones along a measurement direction based on the image, and calculate an overlay between the two sample layers by dividing the apparent overlay by a Moiré gain to compensate for Moiré interference.
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Patent Agency Ranking
公开(公告)号：US20250110412A1
公开(公告)日：2025-04-03
申请号：US18673905
申请日：2024-05-24
Applicant: KLA Corporation
Inventor： Vladimir Levinski
IPC: G03F7/00
Abstract: An overlay metrology system may generate overlay measurements based on isolated images of features on different layers of an overlay target. For example, a target may include a first-layer structure including periodic features with a fine pitch selected to be unresolved by the overlay metrology system, where the gratings structures are oriented to rotate a polarization of rotated diffraction orders relative to a polarization of incident illumination, where the rotated diffraction orders include at least first-order diffraction. In this way, first images generated with a collection polarizer oriented to capture the rotated diffraction orders may include only the first-layer structure, whereas second images generated with a collection polarizer oriented to be aligned with a polarization of incident illumination may include only the second-layer features.
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公开(公告)号：US12235588B2
公开(公告)日：2025-02-25
申请号：US18110746
申请日：2023-02-16
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew V. Hill , Vladimir Levinski
Abstract: An overlay metrology system may include illumination optics to split illumination from an illumination source into primary and secondary illumination and direct the primary illumination to a sample including an overlay target with gratings in two or more layers and an objective lens to collect positive and negative diffraction from the constituent gratings. The system may further include collection optics to overlap the auxiliary illumination with at least some of the collected diffraction lobes to generate time-varying interference signals. The system may further include a controller to generate overlay measurements based on the time-varying interference signals.
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公开(公告)号：US12111580B2
公开(公告)日：2024-10-08
申请号：US17243912
申请日：2021-04-29
Applicant: KLA Corporation
Inventor： Amnon Manassen , Isaac Salib , Raviv Yohanan , Diana Shaphirov , Eitan Hajaj , Vladimir Levinski , Avi Abramov , Michael Shentcis , Ariel Hildesheim , Yoav Grauer , Shlomo Eisenbach , Etay Lavert , Iftach Nir
IPC: G03F7/00 , G01B11/27 , G01N21/35 , G01N21/956
CPC classification number: G03F7/706851 , G01B11/272 , G01N21/35 , G01N21/956 , G03F7/70625 , G03F7/70633 , G03F7/70683
Abstract: An optical metrology tool may include one or more illumination sources to generate illumination having wavelengths both within a short-wave infrared (SWIR) spectral range and outside the SWIR spectral range, illumination optics configured to direct the illumination to a sample, a first imaging channel including a first detector configured to image the sample based on a first wavelength range including at least some wavelengths in the SWIR spectral range, a second imaging channel including a second detector configured to image the sample based on a second wavelength range including at least some wavelengths outside the SWIR spectral range, and a controller. The controller may receive first images of the sample from the first detector, receive second images of the sample from the second detector, and generate an optical metrology measurement of the sample based on the first and second images.
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公开(公告)号：US12105433B2
公开(公告)日：2024-10-01
申请号：US17675912
申请日：2022-02-18
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker , Diana Shaphirov , Evgeni Gurevich , Vladimir Levinski
IPC: G03F7/00
CPC classification number: G03F7/70633
Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.
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公开(公告)号：US12078601B2
公开(公告)日：2024-09-03
申请号：US17955385
申请日：2022-09-28
Applicant: KLA Corporation
Inventor： Nireekshan K. Reddy , Vladimir Levinski , Amnon Manassen
IPC: G01N21/95 , G01N21/01 , G03F7/00 , G01N21/59 , G01N21/956
CPC classification number: G01N21/9501 , G03F7/705 , G01N21/01 , G01N2021/5957 , G01N21/956 , G03F7/70625 , G03F7/70633
Abstract: A metrology system may arrange metrology measurements for a plurality of metrology targets distributed in a plurality of fields on one or samples into a signal vector, where the metrology measurements associated with the metrology targets in each of the plurality of fields are grouped within the signal vector. The system may further decompose the signal vector into reconstruction vectors associated with different spectral components of the signal vector. The system may further classify a subset of the reconstruction vectors as components of a metrology model, where a sum of the components corresponds to a metrology model describing the metrology measurements on the one or more samples. The system may further generate control signals to control one or more processing tools based on the metrology model.
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