公开(公告)号：US20250004047A1

公开(公告)日：2025-01-02

申请号：US18217236

申请日：2023-06-30

Applicant: KLA Corporation

Inventor： Houssam Chouaib ,  Zhaxylyk Kudyshev ,  Chao Chang ,  Derrick A. Shaughnessy

IPC: G01R31/302

Abstract: A system may include a controller including one or more processors configured to execute program instructions causing the one or more processors to implement a measurement recipe by: receiving optical measurement data for training samples including complementary metal-oxide-semiconductor (CMOS) under array (CuA) devices, wherein the CuA devices include CMOS structures disposed beneath periodic memory array structures; developing a first measurement model for determining measurements of the CuA devices based on the optical measurement data, wherein the CMOS structures are modeled as a CMOS effective medium in the first measurement model; receiving reference data for the training samples; updating the first measurement model to a second measurement model that includes the values of dispersion parameters of the CMOS effective medium; receiving optical measurement data for test samples including CuA devices; and generating values of the one or more metrology measurements of the CuA devices based on the second measurement model.

公开(公告)号：US11460418B2

公开(公告)日：2022-10-04

申请号：US16551616

申请日：2019-08-26

Applicant: KLA Corporation

Inventor： Alexander Kuznetsov ,  Chao Chang

IPC: G01N23/20 ,  G01N23/20008 ,  G01N23/205 ,  H01L21/66

Abstract: Methods and systems for measuring structural and material characteristics of semiconductor structures based on wavelength resolved, soft x-ray reflectometry (WR-SXR) at multiple diffraction orders are presented. WR-SXR measurements are simultaneous, high throughput measurements over multiple diffraction orders with broad spectral width. The availability of wavelength resolved signal information at each of the multiple diffraction orders improves measurement accuracy and throughput. Each non-zero diffraction order includes multiple measurement points, each different measurement point associated with a different wavelength. In some embodiments, WR-SXR measurements are performed with x-ray radiation energy in a range of 10-5,000 electron volts at grazing angles of incidence in a range of 1-45 degrees. In some embodiments, the illumination beam is controlled to have relatively high divergence in one direction and relatively low divergence in a second direction, orthogonal to the first direction. In some embodiments, multiple detectors are employed, each detecting different diffraction orders.

公开(公告)号：US20210136902A1

公开(公告)日：2021-05-06

申请号：US17076774

申请日：2020-10-21

Applicant: KLA Corporation

Inventor： Chao Chang ,  Michael Friedmann ,  Jongjin Kim ,  Will Schumaker ,  Ben Clarke

IPC: H05G2/00

Abstract: Methods and systems for generating X-ray illumination from a laser produced plasma (LPP) employing a low atomic number, cryogenic target are presented herein. A highly focused, short duration laser pulse is directed to a low atomic number, cryogenically frozen target, igniting a plasma. In some embodiments, the target material includes one or more elements having an atomic number less than 19. In some embodiments, the low atomic number, cryogenic target material is coated on the surface of a cryogenically cooled drum configured to rotate and translate with respect to incident laser light. In some embodiments, the low atomic number, cryogenic LPP light source generates multiple line or broadband X-ray illumination in a soft X-ray (SXR) spectral range used to measure structural and material characteristics of semiconductor structures. In some embodiments, Reflective, Small-Angle X-ray Scatterometry measurements are performed with a low atomic number, cryogenic LPP illumination source as described herein.