公开(公告)号：US10458028B2

公开(公告)日：2019-10-29

申请号：US15846893

申请日：2017-12-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong Hyuk Park ,  Hyun Seo Park ,  Jimin Kong

IPC: C25B11/04 ,  C25B1/00 ,  C25B11/02 ,  C30B29/02 ,  C30B23/02 ,  C30B33/02

Abstract: An electrochemical method for ammonia synthesis including the steps of: preparing a single-crystalline metal thin film; and synthesizing ammonia by using the single-crystalline metal thin film electrode. More particularly, it relates to improvement of the production yield and synthesis rate of ammonia trough the method for preparing ammonia by using an electrochemical reactor which includes a cathode including a single-crystalline metal thin film on the surface thereof, an anode and an electrolyte, wherein the method includes the steps of: supplying nitrogen to the cathode; supplying aqueous electrolyte solution to the anode; and applying an electric voltage between the cathode and the anode.

公开(公告)号：US20190006061A1

公开(公告)日：2019-01-03

申请号：US15824135

申请日：2017-11-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeong Gon SON ,  Sang-Soo Lee ,  Heesuk Kim ,  Jong Hyuk Park ,  Wan Ki Bae ,  Hyo Won Kwon

IPC: H01B5/14 ,  H01B13/00

CPC classification number: H01B5/14 ,  H01B1/22 ,  H01B13/0036

Abstract: A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.

公开(公告)号：US10745532B1

公开(公告)日：2020-08-18

申请号：US16697167

申请日：2019-11-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeong Gon Son ,  Jinwoo Oh ,  Sang-Soo Lee ,  Heesuk Kim ,  Min Park ,  Jong Hyuk Park ,  Seungjun Chung ,  Tae Ann Kim

IPC: C08J5/18 ,  B32B27/28 ,  B32B27/30 ,  B82Y30/00 ,  B82Y40/00

Abstract: The present disclosure relates to a generalized method for producing a vertically oriented block copolymer film, a block copolymer film with controlled orientation obtained thereby, and a method for producing a self-assembled pattern. According to the present disclosure, it is possible to form a crosslinked layer, which is mechanically stable and undergoes no chemical change, by subjecting the block copolymer surface to plasma treatment using a filter. It is also possible to obtain a vertically oriented block copolymer film by annealing the block copolymer film having such a crosslinked layer. The method for producing a vertically oriented block copolymer film according to the present disclosure is advantageous in that it can be applied for general purpose regardless of the chemical structure, type and morphology of a block copolymer, and the method can be applied generally to the conventional directed self assembly process.

公开(公告)号：US10163983B1

公开(公告)日：2018-12-25

申请号：US15817666

申请日：2017-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang-Soo Lee ,  Jong Hyuk Park ,  Jeong Gon Son ,  Young Jin Kim ,  Minsung Kim ,  Heesuk Kim

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00 ,  H01B1/24

Abstract: A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a core-shell structure containing: a wire-type conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material. Because a first resistive layer, a conductive layer and a second resistive layer are formed as one layer and bipolar conductive filaments are formed on the substantially different resistive layers, the memory can exhibit complementary resistive switching characteristics. In addition, the complementary resistance switchable memory of the present disclosure can be prepared through a simplified process at low cost by introducing a simple process of coating a paste in which a complementary resistance switchable filler and a supporting material are mixed.

公开(公告)号：US09966134B1

公开(公告)日：2018-05-08

申请号：US15407357

申请日：2017-01-17

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong Hyuk Park ,  Sang-Soo Lee ,  Keun-Young Shin ,  Young Jin Kim ,  Min Park ,  Heesuk Kim ,  Jeong Gon Son ,  Wan Ki Bae

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/11

CPC classification number: H01L45/1253 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0016 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/52 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/11 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/16 ,  H01L45/1675

Abstract: Disclosed is a multilevel nonvolatile resistive random-access memory device including a lower electrode, an upper electrode, and an insulation film interposed between the lower electrode and the upper electrode. Each of the lower electrode and the upper electrode includes a plate-shaped portion, and a patterned portion formed on the plate-shaped portion, and the patterned portion includes a protruding 3-dimensional prism structure pattern in which a plurality of prism-shaped structures is repeatedly arranged at a constant interval in a given direction. The patterned portion of the lower electrode and the patterned portion of the upper electrode are arranged to face each other, and a longitudinal direction of the prism-shaped structures of the lower electrode patterned portion and a longitudinal direction of the prism-shaped structures of the upper electrode patterned portion cross each other.