Memory cell based on self-assembled monolayer polaron

    公开(公告)号:US20230041969A1

    公开(公告)日:2023-02-09

    申请号:US17394515

    申请日:2021-08-05

    Abstract: A memory device includes a memory cell and a controller. The memory cell includes: (a) an array of molecule chains, at least one molecule chain includes: (i) first and second binding sites positioned at first and second ends of the molecule chain, respectively, and (ii) a chain of one or more fullerene derivatives, chemically connecting between the first and second binding sites, (b) source and drain electrodes, electrically connected to the first and second binding sites, respectively, and configured to apply to the array a source-drain voltage (VSD) along a first axis, and (c) a gate electrode, configured to apply to the array a gate voltage (VG) along a second different axis. The controller is configured to perform a data storage operation in the memory cell by (i) applying to the gate electrode a signal for producing the VG, and (ii) applying the VSD between the source and drain electrodes.

    SYSTEM AND METHOD FOR GENERATING AN OPTICAL SIGNAL

    公开(公告)号:US20230030962A1

    公开(公告)日:2023-02-02

    申请号:US17876245

    申请日:2022-07-28

    Abstract: To address the need to excite lasers at a high frequency while minimizing electrical parasitic components, the present invention embraces a system and method of exciting a laser using a direct injection of an electron beam. The system may include a low voltage electron emission device made of one or more electron sources. When the device is activated, an electrical field is applied to the tip of each electron source, causing the electron source to emit a stream of electrons. The electrons are directed into a VCSEL, causing it to emit an optical signal. In another aspect, a system for random number generation is provided. The system may also include a processor that receives a measurement of an initial random value, executes an algorithm, where at least one input of the algorithm is the initial random value, and determines a final random value.

    Optical communication modules with improved security

    公开(公告)号:US11496218B1

    公开(公告)日:2022-11-08

    申请号:US17306210

    申请日:2021-05-03

    Abstract: Optical communication modules and associated methods and computer program products for performing network communication security are provided. An example optical module includes a substrate, a first optoelectronic component supported by the substrate configured for operation with optical signals having a first wavelength, and a second optoelectronic component supported by the substrate configured for operation with optical signals having a second wavelength. The module further includes an optical communication medium defining a first end in optical communication with the first optoelectronic component and the second optoelectronic component and a second end. The module also includes security circuitry operably connected with the first optoelectronic component and the second optoelectronic component. The security circuitry determines the presence of a noncompliant component coupled with the optical communication medium at the second end based upon operation of the second optoelectronic component.

    Optically matched vertical-cavity surface-emitting laser (VCSEL) with passivation

    公开(公告)号:US11165222B2

    公开(公告)日:2021-11-02

    申请号:US16404244

    申请日:2019-05-06

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The mesa structure defines an optical window through which the VCSEL is configured to emit light. The mesa structure further includes a passivation layer disposed at least within the optical window. The passivation layer is designed to seal the mesa structure to reduce the humidity sensitivity of the VCSEL and to protect the VCSEL from contaminants. The passivation layer also provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot and dumping behavior.

    VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) DEVICE AND METHOD OF MAKING THE SAME

    公开(公告)号:US20210305783A1

    公开(公告)日:2021-09-30

    申请号:US16828764

    申请日:2020-03-24

    Abstract: A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.

    VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) TUNED THROUGH APPLICATION OF MECHANICAL STRESS VIA A PIEZOELECTRIC MATERIAL

    公开(公告)号:US20210126431A1

    公开(公告)日:2021-04-29

    申请号:US16665435

    申请日:2019-10-28

    Abstract: A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material. The electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to experience the mechanical stress, which causes the emission wavelength of the VCSEL to be modified from a nominal wavelength of the VCSEL.

    High modulation speed PIN-type photodiode

    公开(公告)号:US12278304B2

    公开(公告)日:2025-04-15

    申请号:US17249140

    申请日:2021-02-22

    Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.

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