公开(公告)号：US20250155787A1

公开(公告)日：2025-05-15

申请号：US18922725

申请日：2024-10-22

Applicant: Meta Platforms Technologies, LLC

Inventor： Fenglin Peng ,  Jacques Gollier, JR. ,  Yung-Yu Hsu ,  Robert Upton ,  Thomas Charisoulis ,  Yun Wang ,  Brendan Hamel-Bissell ,  Zhaoning Yu ,  Joshua Cobb ,  Brandon Michael Hellman Friedman ,  Anurag Tyagi ,  John DeFranco ,  Xin Tong

IPC: G03B21/20 ,  G03B21/28

Abstract: An illumination system includes a micro-LED array having a plurality of individually addressable diodes, a concentrator array overlying an output of the micro-LED array and configured to decrease a numerical aperture of light emitted by the array, and a non-emissive display panel arranged to receive light from the concentrator array.

公开(公告)号：US12140730B2

公开(公告)日：2024-11-12

申请号：US17369861

申请日：2021-07-07

Applicant: META PLATFORMS TECHNOLOGIES, LLC

Inventor： Tingling Rao ,  Tanya Malhotra ,  Andrew John Ouderkirk ,  Lafe Joseph Purvis, II ,  Sandeep Rekhi ,  Arman Boromand ,  Sheng Ye ,  Oleg Yaroshchuk ,  Anurag Tyagi

IPC: G02B1/04 ,  C09D5/00 ,  C09D7/45 ,  C09D7/63 ,  C30B29/54 ,  G02B1/02 ,  G02B1/10 ,  G02B5/30

Abstract: An optical film includes an organic solid crystal film formed of a contiguous organic solid crystal having a first dimension no less than 100 micrometer and a second dimension distinct from the first dimension no less than one centimeter. Methods for making the organic solid crystal film are also described.

公开(公告)号：US11677042B2

公开(公告)日：2023-06-13

申请号：US16833614

申请日：2020-03-29

Applicant: Meta Platforms Technologies, LLC

Inventor： Markus Broell ,  Michael Grundmann ,  David Hwang ,  Stephan Lutgen ,  Brian Matthew Mcskimming ,  Anurag Tyagi

IPC: H01L33/32 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L33/0095 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/32

Abstract: Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.