公开(公告)号：US08921821B2

公开(公告)日：2014-12-30

申请号：US13738201

申请日：2013-01-10

Applicant: Micron Technology, Inc.

Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  D. V. Nirmal Ramaswamy ,  Qian Tao

IPC: H01L29/00 ,  H01L29/02 ,  H01L21/20 ,  G11C11/00 ,  G11C11/15 ,  H01L45/00

CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

公开(公告)号：US20140191182A1

公开(公告)日：2014-07-10

申请号：US13738201

申请日：2013-01-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  D.V. Nirmal Ramaswamy ,  Qian Tao

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。