SEMICONDUCTOR DEVICE WITH SUBSTRATE INTEGRATED HOLLOW WAVEGUIDE AND METHOD THEREFOR

    公开(公告)号:US20220173490A1

    公开(公告)日:2022-06-02

    申请号:US17106269

    申请日:2020-11-30

    Applicant: NXP B.V

    Abstract: A method of manufacturing a device is provided. The method includes forming a first cavity in a first substrate with the first cavity having a first depth. A second cavity is formed in a second substrate with the second cavity having a second depth. The first cavity and the second cavity are aligned with each other. The first substrate is affixed to the second substrate to form a waveguide substrate having a hollow waveguide with a first dimension substantially equal to the first depth plus the second depth. A conductive layer is formed on the sidewalls of the hollow waveguide. The waveguide substrate is placed over a packaged semiconductor device, the hollow waveguide aligned with a launcher of the packaged semiconductor device.

    Method and Apparatus for Coupling a Waveguide Structure to an Integrated Circuit Package

    公开(公告)号:US20210075081A1

    公开(公告)日:2021-03-11

    申请号:US16563292

    申请日:2019-09-06

    Applicant: NXP B.V.

    Abstract: A mechanism is provided to reduce a distance of a waveguide antenna from transmit and receive circuitry in an integrated circuit device die. This distance reduction is performed by providing vertical access to radio frequency connections on a top surface of the IC device die. A cavity in the encapsulant of the package can be formed to provide access to the connections and plated to perform a shielding function. A continuous connection from the RF pads is used as a vertical interconnect. The region around the vertical interconnect can be filled with encapsulant potting material and back grinded to form a surface of the semiconductor device package. A waveguide antenna feed can be plated or printed on the vertical interconnect on the surface of the package.

Patent Agency Ranking