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公开(公告)号：US20230266537A1
公开(公告)日：2023-08-24
申请号：US18106220
申请日：2023-02-06
Applicant: PsiQuantum, Corp.
Inventor： Nikhil Kumar
CPC classification number: G02B6/29353 , G02F1/212 , G02B6/2766 , G02B6/3502
Abstract: Photonic devices are disclosed including a first cladding layer, a first electrical contact comprising a first lead coupled to a first dielectric portion, a second electrical contact comprising a second lead coupled to a second dielectric portion, a waveguide structure comprising a slab layer comprising a first material, and a second cladding layer. The slab layer may be coupled to the first dielectric portion of the first electrical contact and the second dielectric portion of the second electrical contact. The first dielectric portion and the second dielectric portion may have a dielectric constant greater than a dielectric constant of the first material.
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公开(公告)号：US20240361663A1
公开(公告)日：2024-10-31
申请号：US18763346
申请日：2024-07-03
Applicant: PsiQuantum Corp.
Inventor： Mihai Vidrighin , Nikhil Kumar , Gary Gibson
CPC classification number: G02F1/3138 , G02B6/12007 , G02B6/354 , G02F1/3132 , G02B2006/12145 , G02B2006/12147
Abstract: A method includes propagating light in a first waveguide of a 1×2 optical switch. The first waveguide is adjacent to a second waveguide in a coupling region. The 1×2 optical switch comprising an input to receive the light and couple the light to the first waveguide. The 1×2 optical switch further comprising a first output to output light from the first waveguide and a second output to output the light from the second waveguide. The method further includes coupling the light to the first output and the second output based on absorption values of the second waveguide in the coupling region; adjusting absorption values of the second waveguide in the coupling region such that light is directed from the input to only the first output; and coupling light to only the first output based on the adjusted absorption values of the second waveguide in the coupling region.
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公开(公告)号：US20210278738A1
公开(公告)日：2021-09-09
申请号：US17189025
申请日：2021-03-01
Applicant: PsiQuantum, Corp.
Inventor： Nikhil Kumar
Abstract: Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.
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公开(公告)号：US12164184B2
公开(公告)日：2024-12-10
申请号：US17723295
申请日：2022-04-18
Applicant: PSIQUANTUM CORP.
Inventor： Yong Liang , Nikhil Kumar
Abstract: An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.
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Patent Agency Ranking
公开(公告)号：US20240302708A1
公开(公告)日：2024-09-12
申请号：US18378572
申请日：2023-10-10
Applicant: PsiQuantum Corp.
Inventor： Mihai Vidrighin , Nikhil Kumar , Gary Gibson
CPC classification number: G02F1/3138 , G02B6/12007 , G02B6/354 , G02F1/3132 , G02B2006/12145 , G02B2006/12147
Abstract: An optical device includes a first waveguide that includes a plurality of first portions coupled with regions doped with first dopants, and a plurality of second portions coupled with regions doped with second dopants, distinct from the first dopants, the plurality of first portions being interleaved with the plurality of second portions. And the optical device includes a second waveguide located adjacent to the first waveguide for coupling light from the first waveguide to the second waveguide. The second waveguide includes a third portion coupled with a third region doped with the first dopants and a fourth portion coupled with a fourth region doped with the second dopants, wherein the first portion is located adjacent to the third portion and the second portion is located adjacent to the fourth portion.
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公开(公告)号：US11953729B2
公开(公告)日：2024-04-09
申请号：US18106220
申请日：2023-02-06
Applicant: PsiQuantum, Corp.
Inventor： Nikhil Kumar
CPC classification number: G02B6/29353 , G02B6/2766 , G02B6/3502 , G02F1/212
Abstract: Photonic devices are disclosed including a first cladding layer, a first electrical contact comprising a first lead coupled to a first dielectric portion, a second electrical contact comprising a second lead coupled to a second dielectric portion, a waveguide structure comprising a slab layer comprising a first material, and a second cladding layer. The slab layer may be coupled to the first dielectric portion of the first electrical contact and the second dielectric portion of the second electrical contact. The first dielectric portion and the second dielectric portion may have a dielectric constant greater than a dielectric constant of the first material.
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公开(公告)号：US11314143B2
公开(公告)日：2022-04-26
申请号：US16941355
申请日：2020-07-28
Applicant: PSIQUANTUM CORP.
Inventor： Mihai Vidrighin , Nikhil Kumar , Gary Gibson
Abstract: An optical switch device includes a first semiconductor structure configured to operate as a first waveguide and a second semiconductor structure configured to operate as a second waveguide. The second semiconductor structure is located above or below the first semiconductor structure and separated from the first semiconductor structure. The second semiconductor structure includes a portion of a first doped region doped with dopants of a first type and a portion of a second doped region doped with dopants of a second type that is different from the dopants of the first type.
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公开(公告)号：US20210278595A1
公开(公告)日：2021-09-09
申请号：US17189050
申请日：2021-03-01
Applicant: PsiQuantum, Corp.
Inventor： Nikhil Kumar
Abstract: Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.
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公开(公告)号：US10747085B1
公开(公告)日：2020-08-18
申请号：US16503993
申请日：2019-07-05
Applicant: PsiQuantum Corp.
Inventor： Mihai Vidrighin , Nikhil Kumar , Gary Gibson
Abstract: An optical switch device includes a first semiconductor structure configured to operate as a first waveguide and a second semiconductor structure configured to operate as a second waveguide. The second semiconductor structure is located above or below the first semiconductor structure and separated from the first semiconductor structure. The second semiconductor structure includes a first portion having a first width and a second portion having a width different from the first width and located on the first portion. The first portion is located between a first doped region and a second doped region.
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