公开(公告)号：US20210147713A1

公开(公告)日：2021-05-20

申请号：US17009850

申请日：2020-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Il JUNG ,  Do Yoon KIM ,  Kenji TAKAI ,  Deuk Kyu MOON ,  Min Hee YOON

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/768 ,  H01L21/321

Abstract: A polishing slurry including a fullerene derivative and at least one compound having at least one positively-charged functional group, and a method of manufacturing a semiconductor device using the polishing slurry.

公开(公告)号：US20210147712A1

公开(公告)日：2021-05-20

申请号：US16861539

申请日：2020-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deuk Kyu Moon ,  Do Yoon KIM ,  Kenji TAKAI ,  Young Seok PARK ,  Moon Il JUNG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

Abstract: A polishing slurry including a fullerene derivative including a metal cation, a method of preparing the polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry.

公开(公告)号：US20210071035A1

公开(公告)日：2021-03-11

申请号：US16884089

申请日：2020-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji TAKAI ,  Do Yoon KIM

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/321

Abstract: A carbon abrasive including a carbon nanoparticle and a positively charged polymer, a positively charged oligomer, of a combination thereof, on a surface of the carbon nanoparticle. A polishing slurry including the carbon abrasive, and a method of manufacturing a semiconductor device using the polishing slurry.

公开(公告)号：US20200161141A1

公开(公告)日：2020-05-21

申请号：US16444076

申请日：2019-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do Yoon KIM ,  Kenji TAKAI

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  B24B37/04

Abstract: A polishing slurry includes a carbon polishing particle and an exothermic material.