公开(公告)号：US20160254386A1

公开(公告)日：2016-09-01

申请号：US15047940

申请日：2016-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Yuhei SATO ,  Naoki OKUNO ,  Motoki NAKASHIMA

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0607 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969

Abstract: Provided is a transistor with stable electrical characteristics. Provided is a semiconductor device including an oxide semiconductor over a substrate, a first conductor in contact with a top surface of the oxide semiconductor, a second conductor in contact with the top surface of the oxide semiconductor, a first insulator over the first and second conductors and in contact with the top surface of the oxide semiconductor, a second insulator over the first insulator, a third conductor over the second insulator, and a third insulator over the third conductor. The third conductor overlaps with the first conductor with the first and second insulators positioned therebetween, and overlaps with the second conductor with the first and second insulators positioned therebetween. The first insulator contains oxygen. The second insulator transmits less oxygen than the first insulator. The third insulator transmits less oxygen than the first insulator.

Abstract translation: 提供了具有稳定电特性的晶体管。 提供了一种半导体器件，其包括在衬底上的氧化物半导体，与氧化物半导体的顶表面接触的第一导体，与氧化物半导体的顶表面接触的第二导体，第一和第二导体上的第一绝缘体 并且与所述氧化物半导体的顶表面接触，在所述第一绝缘体上方的第二绝缘体，所述第二绝缘体上的第三导体以及所述第三导体上的第三绝缘体。 第三导体与第一导体重叠，其中第一和第二绝缘体位于它们之间，并且与第二导体重叠，其中第一和第二绝缘体位于它们之间。 第一绝缘体包含氧。 第二绝缘体比第一绝缘体传输更少的氧。 第三绝缘体比第一绝缘体传输更少的氧。

公开(公告)号：US20150340505A1

公开(公告)日：2015-11-26

申请号：US14719431

申请日：2015-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Masayuki SAKAKURA ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Yuhei SATO

IPC: H01L29/786 ,  H01L21/465 ,  H01L21/477 ,  H01L29/40 ,  H01L29/66 ,  H01L21/02 ,  H01L21/441

CPC classification number: H01L29/66969 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1156 ,  H01L29/401 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：在高于或等于450℃并低于衬底的应变点的温度下加热时，在衬底上方的第一栅电极上形成第一绝缘膜，形成 在所述第一绝缘膜上方的第一氧化物半导体膜，向所述第一氧化物半导体膜添加氧，然后在所述第一氧化物半导体膜上形成第二氧化物半导体膜，进行热处理，使得所述第一氧化物半导体膜中包含的部分氧为 转移到第二氧化物半导体膜。

公开(公告)号：US20220336670A1

公开(公告)日：2022-10-20

申请号：US17697152

申请日：2022-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiromi SAWAI ,  Ryo TOKUMARU ,  Toshihiko TAKEUCHI ,  Tsutomu MURAKAWA ,  Sho NAGAMATSU ,  Tomoaki MORIWAKA

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/04 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US20210328037A1

公开(公告)日：2021-10-21

申请号：US17272399

申请日：2019-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryo TOKUMARU ,  Shinya SASAGAWA ,  Tomonori NAKAYAMA

IPC: H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/441

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a first insulator over the second oxide, a first conductor over the first insulator, and a second conductor and a third conductor over the second oxide. The second conductor includes a first region and a second region, the third conductor includes a third region and a fourth region, the second region is positioned above the first region, the fourth region is positioned above the third region, and each of the second conductor and the third conductor contains tantalum and nitrogen. The atomic ratio of nitrogen to tantalum in the first region is higher than the atomic ratio of nitrogen to tantalum in the second region, and the atomic ratio of nitrogen to tantalum in the third region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.

公开(公告)号：US20210265353A1

公开(公告)日：2021-08-26

申请号：US17256349

申请日：2019-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoru OKAMOTO ,  Ryo TOKUMARU ,  Ryota HODO

IPC: H01L27/108 ,  H01L29/786 ,  G11C11/402

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes an oxide; a first conductor and a second conductor provided apart from each other over the oxide; a third conductor including a region that is over the oxide and overlaps with a region between the first conductor and the second conductor; a first insulator over the third conductor; a fourth conductor that is electrically connected to the first conductor through a first opening provided in the first insulator; a second insulator that is provided over the first insulator and that is provided over the fourth conductor in the first opening; a fifth conductor overlapping with the fourth conductor with the second insulator positioned therebetween in the first opening; and a sixth conductor electrically connected to the second conductor in a second opening provided in the first insulator and the second insulator. The fifth conductor and the sixth conductor are in contact with a top surface of the second insulator over the first insulator.

公开(公告)号：US20210210635A1

公开(公告)日：2021-07-08

申请号：US16760050

申请日：2018-11-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiromi SAWAI ,  Ryo TOKUMARU ,  Toshihiko TAKEUCHI ,  Tsutomu MURAKAWA ,  Sho NAGAMATSU ,  Tomoaki MORIWAKA

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/04 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US20190139783A1

公开(公告)日：2019-05-09

申请号：US16093268

申请日：2017-04-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kazutaka KURIKI ,  Yuji EGI ,  Noritaka ISHIHARA ,  Yusuke NONAKA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Daisuke MATSUBAYASHI

IPC: H01L21/4757 ,  H01L27/105 ,  H01L27/12 ,  H01L29/66 ,  H01L21/443 ,  H01L21/477 ,  H01L21/02 ,  H01L29/786 ,  H01J37/32

Abstract: A semiconductor device having high reliability is provided.A first conductor is formed, a first insulator is formed over the first conductor, a second insulator is formed over the first insulator, a third insulator is formed over the second insulator, microwave-excited plasma treatment is performed on the third insulator, an island-shaped first oxide semiconductor is formed over the third insulator and a second conductor and a third conductor are formed over the first oxide semiconductor, an oxide semiconductor film is formed over the first oxide semiconductor, the second conductor, and the third conductor, a first insulating film is formed over the oxide semiconductor film, a conductive film is formed over the first insulating film, a fourth insulator and a fourth conductor are formed by partly removing the first insulating film and the conductive film, a second insulating film is formed to cover the oxide semiconductor film, the fourth insulator, and the fourth conductor, a second oxide semiconductor and a fifth insulator are formed by partly removing the oxide semiconductor film and the second insulating film to expose a side surface of the first oxide semiconductor, a sixth insulator is formed in contact with the side surface of the first oxide semiconductor and a side surface of the second oxide semiconductor, a seventh insulator is formed in contact with the sixth insulator, and heat treatment is performed.

公开(公告)号：US20180138212A1

公开(公告)日：2018-05-17

申请号：US15811879

申请日：2017-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kiyoshi KATO ,  Yuta ENDO ,  Ryo TOKUMARU

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/108 ,  H01L29/10 ,  H01L21/02 ,  H01L21/4757 ,  H01L21/443

CPC classification number: H01L27/1225 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/443 ,  H01L21/465 ,  H01L21/47573 ,  H01L27/10802 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/1255 ,  H01L27/1262 ,  H01L29/1054 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having favorable electric characteristics is provided. The semiconductor device includes a first transistor and second transistor. The first transistor includes a first conductor over a substrate; a first insulator thereover; a first oxide thereover; a second insulator over thereover; a second conductor including a side surface substantially aligned with a side surface of the second insulator and being over the second insulator; a third insulator including a side surface substantially aligned with a side surface of the second conductor and being over the second conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with the first oxide and the fourth insulator. The second transistor includes a third conductor; a fourth conductor at least part of which overlaps with the third conductor; and a second oxide between the third conductor and the fourth conductor. The third conductor and the fourth conductor are electrically connected to the first conductor.

公开(公告)号：US20170309752A1

公开(公告)日：2017-10-26

申请号：US15488626

申请日：2017-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke MATSUBAYASHI ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Kiyofumi OGINO ,  Taichi ENDO ,  Hajime KIMURA

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/105

CPC classification number: H01L29/78606 ,  H01L27/1052 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film. The source and drain electrodes each includes a conductive oxide film in contact with the oxide semiconductor film. The conductive oxide film has more oxygen vacancies than the oxide semiconductor film.

公开(公告)号：US20170294542A1

公开(公告)日：2017-10-12

申请号：US15632764

申请日：2017-06-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Yuhei SATO ,  Kazuhiro TSUTSUI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423

CPC classification number: H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.