公开(公告)号：US20170133270A1

公开(公告)日：2017-05-11

申请号：US15414469

申请日：2017-01-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L21/683

CPC classification number: H01L21/78 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L24/12 ,  H01L24/19 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/951 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00

Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US20170011936A1

公开(公告)日：2017-01-12

申请号：US15274590

申请日：2016-09-23

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC: H01L21/56 ,  H01L21/3105 ,  H01L23/00 ,  H01L23/31 ,  H01L21/78

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.

Abstract translation: 半导体器件具有包括多个半导体管芯的半导体晶片。 在半导体晶片上形成绝缘层。 通过LDA去除绝缘层的一部分以暴露半导体管芯的有效表面的一部分。 第一导电层形成在半导体管芯的有源表面上的接触焊盘上。 单个半导体晶片以分离半导体管芯。 半导体管芯设置在载体上，半导体管芯的有源表面与载体偏移。 在半导体管芯和载体上沉积密封剂以覆盖半导体管芯的一侧和有源表面的暴露部分。 在第一导电层上形成互连结构。 或者，MUF材料沉积在半导体管芯的一侧和有源表面的暴露部分上。