公开(公告)号：US10510900B2

公开(公告)日：2019-12-17

申请号：US15686415

申请日：2017-08-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Eok Shin ,  Sang Won Shin ,  Dong Min Lee ,  Ju Hyun Lee ,  Shin Il Choi

IPC: H01L29/786 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32

Abstract: A display device according to an exemplary embodiment of the present invention includes: a substrate; a gate line and a data line that are provided on the substrate and are insulated from each other; a thin film transistor that is connected with the gate line and the data line; and a pixel electrode that is connected with the thin film transistor, in which at least one of the gate line and the data line includes a metal layer and a blocking layer that contacts the metal layer, and the blocking layer includes a first metal from a first group including molybdenum (Mo) and tungsten (W), a second metal from a second group including vanadium (V), niobium (Nb), zirconium (Zr), and tantalum (Ta), and oxygen (O).

公开(公告)号：US10134855B2

公开(公告)日：2018-11-20

申请号：US14691092

申请日：2015-04-20

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hyune Ok Shin ,  Chang Oh Jeong ,  Su Kyoung Yang ,  Dong Min Lee

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.

公开(公告)号：US09774008B2

公开(公告)日：2017-09-26

申请号：US14698265

申请日：2015-04-28

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Min Lee ,  Hyun Eok Shin ,  Chan Woo Yang ,  Su Kyoung Yang

IPC: H01L29/08 ,  H01L51/52

CPC classification number: H01L51/5271 ,  H01L51/5265 ,  H01L2251/301 ,  H01L2251/558

Abstract: An organic light-emitting diode (OLED) display device includes a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. The OLED display device further includes a transflective layer contacting a lower surface of the first electrode and having a relatively higher refractive index than the first electrode.

公开(公告)号：US09166201B2

公开(公告)日：2015-10-20

申请号：US14191594

申请日：2014-02-27

Applicant: Samsung Display Co., Ltd.

Inventor： Beung Hwa Jeong ,  Hong Ro Lee ,  Chang Mo Park ,  Yo Seoph Ko ,  Dong Min Lee ,  Sung Hoon Hong

IPC: G06F3/041 ,  H01L51/56 ,  B32B37/24 ,  B32B38/00 ,  B32B38/10

CPC classification number: H01L51/56 ,  B32B37/24 ,  B32B38/0004 ,  B32B38/10 ,  B32B2037/246 ,  B32B2457/206 ,  B32B2457/208 ,  G06F3/041 ,  G06F3/0412 ,  G06F2203/04103 ,  H01L51/003 ,  H01L2227/323

Abstract: A manufacturing method of an organic light emitting diode (“OLED”) display includes: forming a contact pattern on a panel region of a surface of a board glass, where the board glass includes the panel region, and a peripheral area which surrounds the panel region; contacting the paper glass with a surface of the contact pattern corresponding to the panel region and the surface of the board glass corresponding to the peripheral area; adhering the surface of the board glass corresponding to the peripheral area to a surface of the paper glass; forming an organic light emitting element on the paper glass corresponding to the panel region; and separating the paper glass from the board glass by cutting the paper glass at a position corresponding to an end portion of the panel region adjacent to the peripheral area.

Abstract translation: 有机发光二极管（“OLED”）显示器的制造方法包括：在板玻璃的表面的面板区域上形成接触图案，其中板玻璃包括面板区域，以及围绕面板的周边区域 地区; 使纸玻璃与对应于面板区域的接触图案的表面和对应于周边区域的板玻璃的表面接触; 将与周边区域对应的板玻璃的表面粘附到纸玻璃的表面; 在对应于面板区域的纸玻璃上形成有机发光元件; 并且通过在对应于与周边区域相邻的面板区域的端部的位置处切割纸玻璃来分离纸玻璃与板玻璃。

公开(公告)号：US12175914B2

公开(公告)日：2024-12-24

申请号：US18139255

申请日：2023-04-25

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Woo Bae ,  Dong Min Lee

IPC: G09G3/20 ,  G09G3/00 ,  G11C19/28

Abstract: Provided is a display device including a display panel configured to include a plurality of pixels positioned on a first substrate and a plurality of scan lines positioned along a first direction; and a plurality of shift registers configured to receive a plurality of clock signals and a start signal, to generate a plurality of scan signals, and to transfer the scan signals to the scan lines, wherein a first shift register among the shift registers is positioned on a second substrate, and is connected to an adjacent second shift register positioned on the first substrate among the shift registers and a corresponding scan line through a contact hole formed in the second substrate.

公开(公告)号：US11682705B2

公开(公告)日：2023-06-20

申请号：US17088779

申请日：2020-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hyune Ok Shin ,  Chang Oh Jeong ,  Su Kyoung Yang ,  Dong Min Lee

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

CPC classification number: H01L29/41733 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869 ,  C22C29/12

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.

公开(公告)号：US10861949B2

公开(公告)日：2020-12-08

申请号：US16192802

申请日：2018-11-16

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hyune Ok Shin ,  Chang Oh Jeong ,  Su Kyoung Yang ,  Dong Min Lee

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.

公开(公告)号：US08847228B2

公开(公告)日：2014-09-30

申请号：US13691307

申请日：2012-11-30

Applicant: Samsung Display Co., Ltd.

Inventor： Kyung Seop Kim ,  Byeong-Beom Kim ,  Joon Yong Park ,  Chang Oh Jeong ,  Hong Long Ning ,  Dong Min Lee

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/49 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L29/78693 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).

Abstract translation: 薄膜晶体管阵列面板包括：设置在绝缘基板上的半导体层; 与半导体层重叠的栅电极; 与该半导体层重叠的源电极和漏电极; 设置在所述源电极和所述半导体层之间的第一阻挡层; 以及设置在所述漏电极和所述半导体层之间的第二阻挡层，其中所述第一阻挡层和所述第二阻挡层包括镍 - 铬（NiCr）。