公开(公告)号：US11355528B2

公开(公告)日：2022-06-07

申请号：US16890756

申请日：2020-06-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/12 ,  H01L27/32

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

公开(公告)号：US20210143189A1

公开(公告)日：2021-05-13

申请号：US17036619

申请日：2020-09-29

Applicant: Samsung Display Co., LTD.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/12

Abstract: A display device includes a substrate, a first active layer on the substrate, a first insulation layer on the first active layer, a first gate electrode on the first insulation layer, the first gate electrode overlapping the first active layer, a second insulation layer on the first gate electrode, a second active layer on the second insulation layer, a first capacitor electrode on the second insulation layer, the first capacitor electrode overlapping the first gate electrode, a third insulation layer on the second active layer and the first capacitor electrode, a second gate electrode on the third insulation layer, the second gate electrode overlapping the second active layer, and a second capacitor electrode on the third insulation layer, the second capacitor electrode overlapping the first gate electrode and electrically connected to the first capacitor electrode.