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11.发明授权公开(公告)号：US10438715B2
公开(公告)日：2019-10-08
申请号：US14808360
申请日：2015-07-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eunhyoung Cho , Inyong Song , Changseung Lee , Chan Kwak , Jaekwan Kim , Jooho Lee , Jinyoung Hwang
IPC: H01B1/22 , B82Y10/00 , B82Y40/00 , C23F1/14 , C23F1/30 , G06F3/041 , H01L29/41 , G06F3/044 , H01L31/0224 , C23F1/02 , C23F1/40 , H01L29/06 , H01L33/42
Abstract: Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.
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公开(公告)号：US11808918B2
公开(公告)日：2023-11-07
申请号：US17499170
申请日：2021-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaekwan Kim , Jeongyub Lee , Seunghoon Han , Yongsung Kim , Byunghoon Na , Jangwoo You , Changseung Lee
CPC classification number: G02B1/002 , G02B5/005 , G02B5/1814 , G02B27/4211 , B82Y20/00
Abstract: Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.
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13.发明授权公开(公告)号：US11744167B2
公开(公告)日：2023-08-29
申请号：US17330950
申请日：2021-05-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiyeon Yang , Dongho Ahn , Changseung Lee
CPC classification number: H10N70/8828 , H10B63/24 , H10B63/84 , H10N70/066 , H10N70/231 , H10N70/8413
Abstract: Semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
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公开(公告)号：US11329174B2
公开(公告)日：2022-05-10
申请号：US16848165
申请日：2020-04-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongyub Lee , Woong Ko , Changseung Lee , Hongkyu Park , Chanwook Baik , Hongseok Lee , Wonjae Joo
IPC: H01L31/0352 , H01L27/144 , H01L31/02 , H01L31/0224 , H01L31/0288 , H01L31/105 , H01L31/18
Abstract: A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.
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公开(公告)号：US20220025515A1
公开(公告)日：2022-01-27
申请号：US17497523
申请日：2021-10-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jooho Lee , Yongsung Kim , Sanghoon Song , Wooyoung Yang , Changseung Lee , Sungjin Lim , Junsik Hwang
IPC: C23C16/34 , C23C16/50 , C23C16/06 , C23C16/44 , H01M4/04 , H01M10/052 , H01J37/32 , H01M4/13 , C23C16/00
Abstract: A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.
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Patent Agency Ranking
公开(公告)号：US11133179B2
公开(公告)日：2021-09-28
申请号：US16697774
申请日：2019-11-27
Applicant: Samsung Electronics Co., Ltd. , Cornell University
Inventor： Kiyoung Lee , Woojin Lee , Myoungho Jeong , Yongsung Kim , Eunsun Kim , Hyosik Mun , Jooho Lee , Changseung Lee , Kyuho Cho , Darrell G. Schlom , Craig J. Fennie , Natalie M. Dawley , Gerhard H. Olsen , Zhe Wang
Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.
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公开(公告)号：US10541178B2
公开(公告)日：2020-01-21
申请号：US15635990
申请日：2017-06-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Xianyu Wenxu , Yongyoung Park , Kideok Bae , Wooyoung Yang , Changseung Lee
Abstract: A method of evaluating the quality of a thin film layer may include: forming the thin film layer on a substrate; applying a stress to the thin film layer; and evaluating the quality of the thin film layer. A device for evaluating the quality of the thin film layer may include a stress chamber for applying a stress to the thin film layer and a refractive index measuring unit for evaluating the quality of the thin film layer based on a rate of change of a refractive index.
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公开(公告)号：US20250107461A1
公开(公告)日：2025-03-27
申请号：US18753575
申请日：2024-06-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changyup PARK , Young Jae Kang , DongGeon Gu , Bonwon Koo , Segab Kwon , Dongho Ahn , Changseung Lee , Yongnam Ham
Abstract: Provided are variable resistance materials and a variable resistance memory devices including the same. The variable resistance memory device includes: a first electrode; a first variable resistance material on the first electrode; and a second electrode on the first variable resistance material. The first variable resistance material includes germanium, antimony, tellurium, carbon, and sulfur and is expressed by CpSqGexSbyTez, where p is an atomic concentration of carbon, q is an atomic concentration of sulfur, x is an atomic concentration of germanium, y is an atomic concentration of antimony, and z is an atomic concentration of tellurium, wherein a sum of p, q, x, y, and z equals 1, wherein each of p, q, x, y, and z is greater than zero, and wherein q is greater than 0.01 and is less than or equal to about 0.2.
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公开(公告)号：US12140734B2
公开(公告)日：2024-11-12
申请号：US16789675
申请日：2020-02-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongyub Lee , Changseung Lee , Kideok Bae , Eunhyoung Cho
Abstract: An optical thin film includes a support layer and a dielectric layer on the support layer. The dielectric layer has a refractive index greater than that of the support layer. The dielectric layer includes a compound ADX, which includes a Group 3 element A, a Group 5 element D, and an element X having an atomic weight smaller than an atomic weight of A or D. The optical thin film may exhibit light transmission having a high refractive index and low absorptivity.
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公开(公告)号：US11947238B2
公开(公告)日：2024-04-02
申请号：US17469189
申请日：2021-09-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeongyub Lee , Yongsung Kim , Jaekwan Kim , Changseung Lee
IPC: G02F1/21
CPC classification number: G02F1/218
Abstract: Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.
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