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公开(公告)号:US11587947B2
公开(公告)日:2023-02-21
申请号:US17355824
申请日:2021-06-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kang-Won Lee , Jaeyoung Song , Dong-Sik Lee , Donghoon Jang
IPC: H01L27/11582 , H01L27/115 , H01L27/1157 , H01L27/1156 , H01L23/522 , H01L27/1158 , H01L23/528
Abstract: In a 3D semiconductor memory device, a stack structure includes electrodes and first insulating layers disposed between the electrodes. The stack structure has a stair structure on a connection region. A vertical channel structure penetrates the stack structure on a cell array region. A vertical dummy structure penates the stair structure on the connection region. A second insulating layer is selectively disposed on the cell array region. A maximum thickness of the second insulating layer ranges from 1.5 times to 10 times a maximum thickness of the first insulating layer on the second insulating layer. The vertical channel structure includes an abrupt diameter change at a level of a top surface of the second insulating layer. The abrupt diameter change has a surface which is parallel to the top surface of the second insulating layer and is substantially coplanar with the top surface of the second insulating layer.
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公开(公告)号:US11570359B2
公开(公告)日:2023-01-31
申请号:US17301435
申请日:2021-04-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Wooyong Lee , Yunson Yoo , Donghoon Jang , Beomjoon Kwon , Kihuk Lee
Abstract: The present disclosure relates to a method and apparatus for providing a camera service by an electronic device. The electronic device may include a camera, a memory, and at least one processor, the processor configured to control the electronic device to: receive a camera shooting request; display a preview image of an external object obtained through the camera using first area information based on a first shooting mode in response to the shooting request; receive an input corresponding to a second shooting mode in the first shooting mode; and display the preview using second area information corresponding to the second shooting mode in response to the input.
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公开(公告)号:US20210320126A1
公开(公告)日:2021-10-14
申请号:US17355824
申请日:2021-06-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kang-Won Lee , Jaeyoung Song , Dong-Sik Lee , Donghoon Jang
IPC: H01L27/11582 , H01L23/522 , H01L27/1157
Abstract: In a 3D semiconductor memory device, a stack structure includes electrodes and first insulating layers disposed between the electrodes. The stack structure has a stair structure on a connection region. A vertical channel structure penetrates the stack structure on a cell array region. A vertical dummy structure penetrates the stair structure on the connection region. A second insulating layer is selectively disposed on the cell array region. A maximum thickness of the second insulating layer ranges from 1.5 times to 10 times a maximum thickness of the first insulating layer on the second insulating layer. The vertical channel structure includes an abrupt diameter change at a level of a top surface of the second insulating layer. The abrupt diameter change has a surface which is parallel to the top surface of the second insulating layer and is substantially coplanar with the top surface of the second insulating layer.
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公开(公告)号:US20170201662A1
公开(公告)日:2017-07-13
申请号:US15401837
申请日:2017-01-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongsoo KIM , Hwayong Kang , Donghoon Jang , Jaeoh Jeong , Jonghoon Won , Kihuk Lee
CPC classification number: H04N5/2258 , H04N5/2253 , H04N5/23229 , H04N5/23258 , H04N5/33 , H04N5/332 , H04N9/045 , H04N9/09
Abstract: An electronic device is provided. The electronic device includes a display, an image sensor including a color pixel sensor, a thermal image sensor, and a processor configured to acquire a first image of a subject using the color pixel sensor, acquire a second image of the subject using the thermal image sensor, and replace a part of an area of the first image with the second image thereby creating an modified first image that is output through the display.
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