公开(公告)号：US11720027B2

公开(公告)日：2023-08-08

申请号：US17409715

申请日：2021-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injae Lee ,  Ohkug Kwon ,  Sunghyup Kim ,  Yongchan Kim ,  Ouiserg Kim ,  Jeonggil Kim ,  Junghwan Kim ,  Hosun Yoo ,  Daerim Choi ,  Dongkyeng Han

IPC: H05G2/00 ,  G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70033 ,  G03F7/70166 ,  G03F7/70858 ,  G03F7/70916

Abstract: An extreme ultraviolet (EUV) light generating apparatus includes a vessel including a first end and a second end opposite to each other and providing an internal space extending from the first end to the second end, a concave mirror adjacent to the first end of the vessel, a droplet generator supplying a droplet to the internal space of the vessel, a laser light source irradiating a laser beam to cause the droplet to emit EUV light, and a gas jet receiving a flow control gas and spraying the received flow control gas into the internal space of the vessel. The gas jet includes a ring-shaped main body including nozzles spaced apart from one another in a circumferential direction. The nozzles spray the received flow control gas in a downward direction.

公开(公告)号：US20230164999A1

公开(公告)日：2023-05-25

申请号：US17962577

申请日：2022-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangmin Kang ,  Junghwan Kim ,  Hyungjoon Kim ,  Jihoon Choi

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11524 ,  H01L23/528

CPC classification number: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11524 ,  H01L23/5283

Abstract: A semiconductor device includes gate electrodes on a substrate and a memory channel structure extending through the gate electrodes. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The memory channel structure extends in the vertical direction on the substrate. The memory channel structure includes a first filling pattern extending in the vertical direction, a channel on a sidewall of the first filling pattern, and a charge storage structure on a sidewall of the channel. The first filling pattern includes a material having a thermal conductivity equal to or more than about 100 W/m·K at a temperature of about 25° C.

公开(公告)号：US20220352203A1

公开(公告)日：2022-11-03

申请号：US17859631

申请日：2022-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunggil Kim ,  Sungjin Kim ,  Seulye Kim ,  Junghwan Kim ,  Chanhyoung Kim

IPC: H01L27/11582 ,  H01L29/10

Abstract: A three-dimensional semiconductor device including a conductive layer disposed on a substrate and including a first conductivity-type impurity; an insulating base layer disposed on the conductive layer; a stack structure including a lower insulating film disposed on the insulating base, layer, and a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked on the lower insulating film, wherein the insulating base layer includes a high dielectric material; a vertical structure including a vertical channel layer penetrating through the stack structure arid a vertical insulating layer disposed between the vertical channel layer and the plurality of gate electrodes, the vertical structure having an extended area extending in a width direction in the insulating base layer; and an isolation structure penetrating through the stack structure, the insulating base layer and the conductive layer, and extending in a direction parallel to an upper surface of the substrate, wherein the conductive layer has an extension portion extending along a surface of the vertical channel layer in the extended area of the vertical structure.

公开(公告)号：US20220082946A1

公开(公告)日：2022-03-17

申请号：US17409715

申请日：2021-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injae Lee ,  Ohkug Kwon ,  Sunghyup Kim ,  Yongchan Kim ,  Ouiserg Kim ,  Jeonggil Kim ,  Junghwan Kim ,  Hosun Yoo ,  Daerim Choi ,  Dongkyeng Han

IPC: G03F7/20

Abstract: An extreme ultraviolet (EUV) light generating apparatus includes a vessel including a first end and a second end opposite to each other and providing an internal space extending from the first end to the second end, a concave mirror adjacent to the first end of the vessel, a droplet generator supplying a droplet to the internal space of the vessel, a laser light source irradiating a laser beam to cause the droplet to emit EUV light, and a gas jet receiving a flow control gas and spraying the received flow control gas into the internal space of the vessel. The gas jet includes a ring-shaped main body including nozzles spaced apart from one another in a circumferential direction. The nozzles spray the received flow control gas in a downward direction.