Semiconductor device
    11.
    发明授权

    公开(公告)号:US12046598B2

    公开(公告)日:2024-07-23

    申请号:US17507567

    申请日:2021-10-21

    Applicant: Socionext Inc.

    Abstract: A semiconductor device includes a first power supply line, a second power supply line, a first ground line, a switch circuit connected to the first and the second power supply line, and a switch control circuit connected to the first ground line and the first power supply line. The switch circuit includes a first and a second transistor of a first conductive type. A first gate electrode of the first transistor is connected to a second gate electrode of the second transistor. The switch control circuit includes a third transistor of a second conductive type, and a fourth transistor of a third conductive type. A third gate electrode of the third transistor is connected to a fourth gate electrode of the fourth transistor. A semiconductor device includes a signal line that electrically connects a connection point between the third and fourth transistor to the first and second gate electrode.

    SEMICONDUCTOR DEVICE
    12.
    发明申请

    公开(公告)号:US20220293634A1

    公开(公告)日:2022-09-15

    申请号:US17829341

    申请日:2022-05-31

    Applicant: Socionext Inc.

    Abstract: A semiconductor device includes a first chip including a substrate and a first wiring layer formed on a first surface of the substrate; and a second wiring layer formed on a second surface of the substrate opposite to the first surface of the substrate. The second wiring layer includes a first power line to which a first power potential is applied; a second power line to which a second power potential is applied; a third power line to which a third power potential is applied; a first switch connected between the first power line and the second power line; and a second switch provided on one of the first power line or the third power line. The first chip includes a first circuit provided between the first power line and the third power line.

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