公开(公告)号：US5837562A

公开(公告)日：1998-11-17

申请号：US499411

申请日：1995-07-07

Applicant: Steve T. Cho

Inventor： Steve T. Cho

IPC: G01P1/02 ,  H01L21/50 ,  H01L23/057 ,  H01L21/60 ,  H01L21/48

CPC classification number: H01L21/50 ,  G01P1/023 ,  H01L23/057 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/16152 ,  H01L2924/163

Abstract: A process for manufacturing a vacuum enclosure for a semiconductor device formed on a substrate with leads extending peripherally. Assembly of the enclosure is compatible with known batch fabrication techniques and is carried out at pressures required for optimal device operation. In a first embodiment, an intrinsic silicon shell is sealed to the substrate via electrostatic or anodic bonding with the leads diffusing into the shell. In a second embodiment, a thin interface layer of silicon or polysilicon is deposited on the substrate prior to electrostatic bonding a glass shell thereon. In a third embodiment, tunnels are formed between a lower peripheral edge of the shell and the substrate, allowing leads to pass thereunder. The tunnels are sealed by a dielectric material applied over the enclosure.

Abstract translation: 一种用于制造半导体器件的真空外壳的方法，该半导体器件形成在具有沿周向延伸的引线的基板上。 外壳的组装与已知的批量制造技术兼容，并且在最佳设备操作所需的压力下进行。 在第一实施例中，本征硅壳体通过静电或阳极接合而密封到衬底，引线扩散到壳体中。 在第二实施例中，在将玻璃壳静电接合之前，将硅或多晶硅的薄界面层沉积在基板上。 在第三实施例中，在壳体的下周缘和基板之间形成隧道，允许引线在其下通过。 隧道被施加在外壳上的电介质材料密封。

公开(公告)号：US06571464B2

公开(公告)日：2003-06-03

申请号：US09844738

申请日：2001-04-26

Applicant: Theodore S. Fahlen ,  Alfred S. Conte ,  Robert M. Duboc, Jr. ,  George B. Hopple ,  John K. O'Reilly ,  Vasil M. Chakarov ,  Robert L. Marion ,  Steve T. Cho ,  Robert G. Neimeyer ,  Jennifer Y. Sun ,  David L. Morris ,  Christopher J. Spindt ,  Kollengode S. Narayanan

Inventor： Theodore S. Fahlen ,  Alfred S. Conte ,  Robert M. Duboc, Jr. ,  George B. Hopple ,  John K. O'Reilly ,  Vasil M. Chakarov ,  Robert L. Marion ,  Steve T. Cho ,  Robert G. Neimeyer ,  Jennifer Y. Sun ,  David L. Morris ,  Christopher J. Spindt ,  Kollengode S. Narayanan

IPC: H21R4300

CPC classification number: H01J9/242 ,  H01J29/864 ,  H01J31/127 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H01J2329/8665 ,  Y10T29/49004 ,  Y10T29/49117

Abstract: Methods and structures are provided which support spacer walls in a position which facilitates installation of the spacer walls between a faceplate structure and a backplate structure of a flat panel display. In one embodiment, spacer feet are formed at opposing ends of the spacer wall. These spacer feet can be formed of materials such as ceramic, glass and/or glass frit. The spacer feet support the corresponding spacer wall on the faceplate (or backplate) structure. Tacking electrodes can be provided on the faceplate (or backplate) structure to assert an electrostatic force on the spacer feet, thereby holding the spacer feet in place during installation of the spacer wall. The spacer wall can be mechanically and/or thermally expanded prior to attaching both ends of the spacer wall to the faceplate (or backplate) structure. The spacer wall is then allowed to contract, thereby introducing tension into the spacer wall which tends to straighten any inherent waviness in the spacer wall. Alternatively, spacer clips can be clamped onto opposing ends of a spacer wall to support the spacer wall during installation. The spacer clips can provide electrical connections to face electrodes located on the spacer wall.

Abstract translation: 制造适于放置在平板显示器的面板结构（301）和背板结构（302）之间的自立间隔物（100或200）的方法必须首先提供具有一对相对表面的晶片（401） （401A和401B）和一对相对端。 分隔垫脚材料的两个杆（411和412）分别在其一个表面上或分别在两个表面上分别放置在晶片的两端附近。 间隔条（161-164）通过横向切割穿过条形并通过晶片基本同时从端到端形成。 每个间隔条然后由晶片的一部分和一对横向分离的间隔脚（111和112）组成，每个由脚的一部分组成。

公开(公告)号：US06445053B1

公开(公告)日：2002-09-03

申请号：US09627946

申请日：2000-07-28

Applicant: Steve T. Cho

Inventor： Steve T. Cho

IPC: H01L2982

CPC classification number: G01L9/0042

Abstract: A micro-machined absolute pressure sensor and process for making the same. A semiconductor membrane having a welled portion connected to a planar periphery is formed in recess in a silicon substrate through etching and boron diffusion. A dielectric pad is formed on a portion of the planar periphery, and a bonding layer of polysilicon or amorphous silicon is deposited over the semiconductor membrane and the dielectric pad. After an etching process that defines the outline of the semiconductor membrane, the bonding layer is bonded to a nonconductive substrate in a vacuum using electrostatic bonding or wafer bonding, forming a vacuum-sealed reference cavity. A first and a second conductor are disposed on an upper surface of the nonconductive substrate. The first conductor serves as a capacitor plate disposed within the reference cavity and is connected to a transfer lead that passes from the cavity. The transfer lead is electrically isolated from the semiconductor membrane by the dielectric pad. The second conductor is electrically connected to the semiconductor membrane. The semiconductor membrane and the capacitor plate store an electrical charge that varies as a function of the distance between the capacitor plate and the semiconductor membrane. The semiconductor membrane flexes in response to pressure, changing the capacitance and the charge, so as to indicate the pressure of external fluid acting on the semiconductor membrane.

Abstract translation: 微加工绝对压力传感器及其制造方法。 通过蚀刻和硼扩散，在硅衬底的凹部中形成具有连接到平面周边的阱部的半导体膜。 在平面周边的一部分上形成介电垫，并且在半导体膜和电介质垫上沉积多晶硅或非晶硅的结合层。 在限定半导体膜的轮廓的蚀刻工艺之后，使用静电接合或晶片接合在真空中将结合层接合到非导电基板上，形成真空密封的基准腔。 第一和第二导体设置在非导电衬底的上表面上。 第一导体用作设置在参考空腔内的电容器板，并连接到从空腔通过的转移引线。 传输引线通过介质焊盘与半导体膜电隔离。 第二导体电连接到半导体膜。 半导体膜和电容器板存储根据电容器板和半导体膜之间的距离而变化的电荷。 半导体膜响应于压力而弯曲，改变电容和电荷，以指示作用在半导体膜上的外部流体的压力。

公开(公告)号：US06349740B1

公开(公告)日：2002-02-26

申请号：US09288762

申请日：1999-04-08

Applicant: Steve T. Cho ,  Harlow B. Christianson

Inventor： Steve T. Cho ,  Harlow B. Christianson

IPC: F16K3102

CPC classification number: A61M5/14276 ,  A61M5/16877 ,  A61M5/365 ,  A61M2205/0244 ,  A61M2205/3523 ,  Y10T137/2082 ,  Y10T137/2191 ,  Y10T137/7761

Abstract: A monolithic flow controller for controlling the rate at which a medicinal liquid is administered to a patient. The monolithic flow controller includes one or more virtual valves that, because of their relatively small opening size (less than 0.5 &mgr;m in diameter), only permit fluid to flow through the valve when a forward bias voltage is applied. If a reverse bias voltage or no voltage is applied, fluid flow through the opening is inhibited. The fluid rate through the device is monitored using two pressure sensors or a differential pressure sensor that determine the differential pressure along the flow path through the device or relative to the external ambient pressure. The flow through the device is equal to the product of the differential pressure and the conductance of the channel in the flow controller. A capacitive bubble sensor is optionally provided to detect bubbles in the medicinal liquid being administered to the patient. The flow controller can be made sufficiently small to be injected into a patient's cardiovascular system or other portion of the patient's body through a hypodermic syringe and needle, or it can be implanted in the patient's body at a desired site. The medicinal liquid can be contained within an integral pressurized fluid reservoir, administered by gravity feed, or conveyed by a pump to an inlet port of the flow controller.

Abstract translation: 一种用于控制向患者施用药液的速率的单片流量控制器。 单片流量控制器包括一个或多个虚拟阀，由于其相对小的开口尺寸（直径小于0.5um），仅当施加正向偏置电压时，允许流体流过阀。 如果施加反向偏置电压或没有施加电压，则流过开口的流体被阻止。 使用两个压力传感器或差压传感器监测通过装置的流体速率，该压力传感器或差压传感器确定沿着穿过装置的流动路径或相对于外部环境压力的压力差。 通过该装置的流量等于流量控制器中通道的差压和电导的乘积。 可选地提供电容式气泡传感器以检测施用于患者的药液中的气泡。 流量控制器可以制造得足够小以通过皮下注射器和针头注射到患者的心血管系统或患者身体的其他部分，或者可以将其植入患者的身体所需位置。 医药液体可以容纳在通过重力进料施加的整体加压流体储存器中，或者通过泵输送到流量控制器的入口端口。

公开(公告)号：US5377524A

公开(公告)日：1995-01-03

申请号：US902328

申请日：1992-06-22

Applicant: Kensall D. Wise ,  Steve T. Cho

Inventor： Kensall D. Wise ,  Steve T. Cho

IPC: G01F1/38 ,  G01F1/50 ,  G01F7/00 ,  G01F25/00 ,  G01L9/00 ,  G01L9/12

CPC classification number: G01F1/383 ,  G01F1/50 ,  G01F25/0007 ,  G01F7/005 ,  G01L27/007 ,  G01L9/0073 ,  G01L9/12

Abstract: A high-performance switched-capacitor circuit for electronic read-out of a pressure sensor-based ultrasensitive microflow transducer. The microflow transducer uses a differential capacitive pressure sensor to measure flow. Read-out electronics associated with the transducer feature a clocking speed of 100 KHz and drive loads up to 35 pF. The read-out electronics include a high DC gain that nulls out stray input capacitance, which is beneficial for the multichip realization of the microflow transducer disclosed herein. The uncompensated linearity of the overall read-out electronics is 10 bits, and the pressure/flow resolution is 12 bits. An ultrasensitive membrane associated with the pressure sensor does not respond to a pulsed waveform for frequencies above 50 KHz. But for lower frequencies, it deflects in response to the time-average voltage applied across the capacitor plates of the pressure sensor. A self-test mode is provided which employs an extremely long pre-charge pulse. An integrated flowmeter package including transducer and circuitry, and a second circuit for extending the range of the microflowmeter circuitry are also disclosed.

Abstract translation: 一种高性能开关电容电路，用于电子读出基于压力传感器的超灵敏微流量传感器。 微流量传感器使用差分电容式压力传感器来测量流量。 与传感器相关的读出电子器件的时钟速度为100 KHz，驱动负载高达35 pF。 读出的电子器件包括一个高直流增益，使杂散输入电容无效，这有利于本文公开的微流量变换器的多芯片实现。 整体读出电子元件的无补偿线性度为10位，压力/流量分辨率为12位。 与压力传感器相关联的超灵敏膜对于频率高于50KHz的脉冲波形不起作用。 但是对于较低的频率，其响应于施加在压力传感器的电容器板上的时间平均电压而偏转。 提供了一种使用非常长的预充电脉冲的自检模式。 还公开了一种包括换能器和电路的集成流量计封装以及用于扩展微流量计电路范围的第二电路。