公开(公告)号：US20140084754A1

公开(公告)日：2014-03-27

申请号：US13624572

申请日：2012-09-21

Applicant: TDK CORPORATION

Inventor： Kazuhiko MAEJIMA ,  Katsuyuki KURACHI ,  Hitoshi SAKUMA ,  Yasuhiro AIDA ,  Yoshitomo TANAKA

IPC: H01L41/04 ,  H01L41/187

CPC classification number: H01L41/04 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric device according to the present invention includes a potassium sodium niobate-based piezoelectric thin film having an average crystal grain diameter of 60 nm or more and 90 nm or less, and a pair of electrode films configured to hold the piezoelectric thin film therebetween.

Abstract translation: 根据本发明的薄膜压电装置包括平均晶粒直径为60nm以上且90nm以下的磷酸铌酸钾系压电薄膜，以及配置成保持压电薄膜的一对电极薄膜 之间。