公开(公告)号：US20230154974A1

公开(公告)日：2023-05-18

申请号：US17529750

申请日：2021-11-18

Applicant: Texas Instruments Incorporated

Inventor： Elizabeth Costner Stewart ,  Thomas Dyer Bonifield ,  Jeffrey Alan West ,  Byron Lovell Williams

IPC: H01L49/02 ,  H01L23/00 ,  H01L25/16 ,  H01L23/495

CPC classification number: H01L28/60 ,  H01L24/05 ,  H01L25/16 ,  H01L23/49575 ,  H01L2224/0556 ,  H01L2224/05624

Abstract: An electronic device includes a first dielectric layer above a semiconductor layer, lower-bandgap dielectric layer above the first dielectric layer, the lower-bandgap dielectric layer having a bandgap energy less than a bandgap energy of the first dielectric layer, a first capacitor plate above the lower-bandgap dielectric layer in a first plane of first and second directions, a second dielectric layer above the first capacitor plate, a second capacitor plate above the second dielectric layer in a second plane of the first and second directions, the first and second capacitor plates spaced apart from one another along a third direction, and a conductive third capacitor plate above the second dielectric layer in the second plane, the third capacitor plate spaced apart from the second capacitor plate in the second plane.

公开(公告)号：US20220069066A1

公开(公告)日：2022-03-03

申请号：US17007726

申请日：2020-08-31

Applicant: Texas Instruments Incorporated

Inventor： Thomas Dyer Bonifield ,  Jeffrey Alan West ,  Byron Lovell Williams ,  Elizabeth Costner Stewart

IPC: H01L49/02 ,  H01L23/522 ,  H01L27/02

Abstract: A galvanic isolation capacitor device includes a semiconductor substrate and a PMD layer over the semiconductor substrate. The PMD layer has a first thickness. A lower metal plate is over the PMD layer and an ILD layer is on the lower metal plate; the ILD layer has a second thickness. A ratio of the first thickness to the second thickness is between about 1 and 1.55 inclusive. A first upper metal plate over the ILD layer has a first area and a second upper metal plate over the ILD layer has a second area; a ratio of the first area to the second area is greater than about 5. The galvanic isolation capacitor device can be part of a multi-chip module.

公开(公告)号：US20240120367A1

公开(公告)日：2024-04-11

申请号：US18390395

申请日：2023-12-20

Applicant: Texas Instruments Incorporated

Inventor： Elizabeth Costner Stewart ,  Thomas Dyer Bonifield ,  Jeffrey Alan West ,  Byron Lovell Williams

IPC: H01G4/30 ,  H01L23/00 ,  H01L23/495 ,  H01L25/16

CPC classification number: H01L28/60 ,  H01L23/49575 ,  H01L24/05 ,  H01L25/16 ,  H01L2224/0556 ,  H01L2224/05624

Abstract: An electronic device includes a first dielectric layer above a semiconductor layer, lower-bandgap dielectric layer above the first dielectric layer, the lower-bandgap dielectric layer having a bandgap energy less than a bandgap energy of the first dielectric layer, a first capacitor plate above the lower-bandgap dielectric layer in a first plane of first and second directions, a second dielectric layer above the first capacitor plate, a second capacitor plate above the second dielectric layer in a second plane of the first and second directions, the first and second capacitor plates spaced apart from one another along a third direction, and a conductive third capacitor plate above the second dielectric layer in the second plane, the third capacitor plate spaced apart from the second capacitor plate in the second plane.

公开(公告)号：US20230056046A1

公开(公告)日：2023-02-23

申请号：US17682762

申请日：2022-02-28

Applicant: Texas Instruments Incorporated

Inventor： Byron Lovell Williams ,  Elizabeth Costner Stewart ,  Jeffrey Alan West ,  Thomas Dyer Bonifield

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: An electronic device has a conductive shield between first and second regions in a multilevel metallization structure, as well as a capacitor with first and second terminals in the first region, the first terminal laterally overlaps the second terminal by an overlap distance of 1.0 μm to 6.0 μm, the conductive shield includes a first metal line that encircles the first terminal, and the first metal line is spaced apart from the first terminal by a gap distance of 0.5 μm to 1.0 μm.

公开(公告)号：US11049820B2

公开(公告)日：2021-06-29

申请号：US16049256

申请日：2018-07-30

Applicant: Texas Instruments Incorporated

Inventor： Elizabeth Costner Stewart ,  Jeffrey A. West

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/8234 ,  H01L49/02 ,  H01L23/31

Abstract: An integrated circuit (IC) includes a substrate having functional circuitry for realizing at least one circuit function configured together with at least one high voltage isolation component including a top metal feature above the substrate. A crack suppressing dielectric structure including at least a crack resistant dielectric layer is on at least a top of the top metal feature. At least one dielectric passivation overcoat (PO) layer is on an outer portion of the top metal feature.

公开(公告)号：US09716013B2

公开(公告)日：2017-07-25

申请号：US14172497

申请日：2014-02-04

Applicant: Texas Instruments Incorporated

Inventor： Elizabeth Costner Stewart ,  Neng Jiang ,  Yung Shan Chang ,  Ricky Alan Jackson

IPC: H01L21/3213

CPC classification number: H01L21/32136 ,  H01L21/32139

Abstract: A method of etching a metal containing layer including a metal including material includes providing a substrate including a top semiconductor surface having the metal containing layer thereon. A photoresist pattern is formed from a photoresist layer on the metal containing layer including forming sloped edge regions of the photoresist layer, wherein the sloped edge regions have an average angle over a full length of the sloped edge regions of from ten (10) to fifty (50) degrees. The metal containing layer is dry etched using the photoresist pattern, wherein the sloped edge regions of the photoresist layer reduce deposition and growth of an etch byproduct including the metal including material into sidewalls of the photoresist layer (metal/polymer sidewall defect) as compared to a conventional vertical (or near-vertical) edge of the photoresist layer.

公开(公告)号：US09660603B2

公开(公告)日：2017-05-23

申请号：US14682651

申请日：2015-04-09

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Elizabeth Costner Stewart ,  Nicholas S. Dellas

IPC: H03H3/02

CPC classification number: H03H3/02 ,  H03H2003/025

Abstract: A method of fabricating a sloped termination of a molybdenum layer includes providing the molybdenum layer and applying a photo resist material to the molybdenum layer. The photo resist material is exposed under a defocus condition to generate a resist mask having an edge portion. The molybdenum layer is etched at least at the edge portion of the resist mask to result in a sloped termination of the molybdenum layer.

公开(公告)号：US20240113094A1

公开(公告)日：2024-04-04

申请号：US17957847

申请日：2022-09-30

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey Alan West ,  Sreeram N. S. ,  Kashyap Barot ,  Thomas Dyer Bonifield ,  Byron Lovell Williams ,  Elizabeth Costner Stewart

IPC: H01L25/18 ,  H01F27/28 ,  H01F27/29 ,  H01F27/32 ,  H01L23/00 ,  H01L27/01

CPC classification number: H01L25/18 ,  H01F27/2804 ,  H01F27/29 ,  H01F27/323 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L27/01 ,  H01F2027/2809 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/06051 ,  H01L2224/06102 ,  H01L2224/06155 ,  H01L2224/0616 ,  H01L2224/4809 ,  H01L2224/48137 ,  H01L2224/48175 ,  H01L2224/4909

Abstract: A microelectronic device includes a galvanic isolation device on a silicon substrate and a semiconductor device on a semiconductor substrate. The galvanic isolation device includes a lower isolation element over the silicon substrate and an upper isolation element above the lower isolation element, separated by a dielectric plateau that comprises inorganic dielectric material extending from the lower isolation element to the upper isolation element. The galvanic isolation device includes lower bond pads connected to the lower isolation element adjacent to the dielectric plateau, and upper bond pads over the dielectric plateau, connected to the upper isolation element. The semiconductor device includes an active component, and device bond pads coupled to the active component. The microelectronic device includes first electrical connections to the lower bond pads and second electrical connections to the upper bond pads. The first electrical connections or the second electrical connections are connected to the device bond pads.

公开(公告)号：US11784212B2

公开(公告)日：2023-10-10

申请号：US17007726

申请日：2020-08-31

Applicant: Texas Instruments Incorporated

Inventor： Thomas Dyer Bonifield ,  Jeffrey Alan West ,  Byron Lovell Williams ,  Elizabeth Costner Stewart

IPC: H01L23/522 ,  H01L27/02 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L23/5223 ,  H01L27/0292

Abstract: A galvanic isolation capacitor device includes a semiconductor substrate and a PMD layer over the semiconductor substrate. The PMD layer has a first thickness. A lower metal plate is over the PMD layer and an ILD layer is on the lower metal plate; the ILD layer has a second thickness. A ratio of the first thickness to the second thickness is between about 1 and 1.55 inclusive. A first upper metal plate over the ILD layer has a first area and a second upper metal plate over the ILD layer has a second area; a ratio of the first area to the second area is greater than about 5. The galvanic isolation capacitor device can be part of a multi-chip module.

公开(公告)号：US11495658B2

公开(公告)日：2022-11-08

申请号：US16435095

申请日：2019-06-07

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Elizabeth Costner Stewart ,  Jeffrey A. West ,  Thomas D. Bonifield

IPC: H01L49/02 ,  H01L27/07 ,  H01L29/06 ,  H01L23/522

Abstract: An electronic device, e.g. integrated circuit, has top and bottom metal plates located over a substrate, the bottom plate located between the top plate and the substrate. A high-stress silicon dioxide layer is located between the bottom plate and the substrate. At least one low-stress silicon dioxide layer is located between the top plate and the bottom plate.