公开(公告)号：US20100041214A1

公开(公告)日：2010-02-18

申请号：US12461315

申请日：2009-08-07

Applicant: Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Huaxiang Yin

Inventor： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Huaxiang Yin

IPC: H01L21/20

CPC classification number: H01L21/02636 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02686

Abstract: A high quality single crystal substrate and a method of fabricating the same are provided. The method of fabricating a single crystal substrate includes: forming an insulator on a substrate; forming a window in the insulator, the window exposing a portion of the substrate; forming an epitaxial growth silicon or germanium seed layer on the portion of the substrate exposed through the window; depositing a silicon or germanium material layer, which are crystallization target material layers, on the epitaxial growth silicon 6r germanium seed layer and the insulator; and crystallizing the crystallization target material layer by melting and cooling the crystallization target material layer.

Abstract translation: 提供了高质量的单晶基板及其制造方法。 制造单晶衬底的方法包括：在衬底上形成绝缘体; 在所述绝缘体中形成窗口，所述窗口暴露所述基板的一部分; 在通过窗户暴露的衬底的部分上形成外延生长硅或锗种子层; 在外延生长硅6r锗种子层和绝缘体上沉积作为结晶靶材料层的硅或锗材料层; 并且通过熔化和冷却结晶化目标材料层来使结晶目标材料层结晶。

公开(公告)号：US20090162981A1

公开(公告)日：2009-06-25

申请号：US12372541

申请日：2009-02-17

Applicant: Huaxiang YIN ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-young Kim

Inventor： Huaxiang YIN ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-young Kim

IPC: H01L21/84

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/7855

Abstract: A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to connect the source and the drain with each other; and a gate formed on the buffer layer to be spaced apart from the source, the drain and the channel layer.

Abstract translation: 提供薄膜晶体管及其制造方法。 薄膜晶体管包括基板; 形成在所述基板上的缓冲层; 在缓冲层上彼此间隔开的源极和漏极; 形成在所述缓冲层上的沟道层，以将所述源极和所述漏极彼此连接; 以及形成在缓冲层上以与源极，漏极和沟道层间隔开的栅极。

公开(公告)号：US07470579B2

公开(公告)日：2008-12-30

申请号：US11557360

申请日：2006-11-07

Applicant: Hyuk Lim ,  Takashi Noguchi ,  Jong-man Kim ,  Kyung-bae Park ,  Huaxiang Yin

Inventor： Hyuk Lim ,  Takashi Noguchi ,  Jong-man Kim ,  Kyung-bae Park ,  Huaxiang Yin

IPC: H01L21/336

CPC classification number: H01L29/78621 ,  H01L29/66757

Abstract: A thin film transistor having an offset or a lightly doped drain (LDD) structure by self alignment and a method of fabricating the same comprises a substrate, a silicon layer disposed on the substrate and including a channel region, a source region and a drain region at both sides of the channel region, and offset regions, each offset regions disposed between the channel region and one of the source and drain regions at both sides of the channel region, a gate insulating layer covering the channel region and the offset regions disposed at both sides of the channel region excluding the source and drain regions, and a gate layer formed on the channel region excluding the offset regions. The thin film transistor has the structure in which an offset or LDD is obtained without an additional mask process.

Abstract translation: 具有通过自对准的偏移或轻掺杂漏极（LDD）结构的薄膜晶体管及其制造方法包括：衬底，设置在衬底上的硅层，并且包括沟道区，源极区和漏极区 在通道区域的两侧和偏移区域，每个偏移区域设置在沟道区域和沟道区域两侧的源极和漏极区域之一之间，覆盖沟道区域的栅极绝缘层和设置在沟道区域的偏移区域 除了源极和漏极区域之外的沟道区域的两侧，以及形成在除偏移区域之外的沟道区域上的栅极层。 薄膜晶体管具有在没有附加掩模处理的情况下获得偏移或LDD的结构。

公开(公告)号：US20080220275A1

公开(公告)日：2008-09-11

申请号：US12073519

申请日：2008-03-06

Applicant: Takashi Noguchi ,  Takato Adachi

Inventor： Takashi Noguchi ,  Takato Adachi

IPC: C08K5/17 ,  B32B27/00 ,  B05D3/00

CPC classification number: B05D7/532 ,  B05D7/14 ,  C08F212/08 ,  C08F220/18 ,  C08F2220/281 ,  C08K5/29 ,  C08K5/54 ,  C08K5/56 ,  C09D5/02 ,  C09D133/14 ,  Y10T428/31855

Abstract: The invention provides water-based one package coat comprising acrylic resin having specific long chain primary hydroxyl-containing side chains as crosslinking functional groups and a solubility parameter of 9.30-11.20, and blocked polyisocyanate compound having a solubility parameter of 9.00-11.50, the difference ΔSP between the solubility parameter (SP1) of the acrylic resin and the solubility parameter (SP2) of the blocked polyisocyanate compound (ΔSP=(SP1)−(SP2)) being within a range of from −0.80 to 1.50.

Abstract translation: 本发明提供包含具有特定长链伯羟基侧链作为交联官能团和溶解度参数为9.30-11.20的丙烯酸树脂和溶解度参数为9.00-11.50的封闭多异氰酸酯化合物的水性一包装涂层， 丙烯酸树脂的溶解度参数（SP1）与封端多异氰酸酯化合物（ΔSP=（SP1） - （SP2））的溶解度参数（SP2）之间的ΔSP值在-0.80〜1.50的范围内。

公开(公告)号：US07416924B2

公开(公告)日：2008-08-26

申请号：US11270541

申请日：2005-11-10

Applicant: Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

Inventor： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

IPC: H01L21/84 ,  H01L21/00 ,  H01L51/40 ,  H01L21/46

CPC classification number: H01L27/1266 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/78603

Abstract: Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.

Abstract translation: 提供一种有机发光显示器，其中在塑料基板上形成包括开关晶体管和由单晶硅形成的驱动晶体管的2T-1C结构的半导体电路单元。 制造单晶硅的方法包括：在晶体生长板上生长单晶硅层至预定厚度; 在单晶硅层上沉积缓冲层; 通过例如从绝缘层的上部注入单晶硅层中的氢离子，在单晶硅层中形成预定深度的分隔层; 将衬底附接到缓冲层; 以及通过从晶体生长板加热分隔层来释放单晶硅层的分隔层，以在基板上获得预定厚度的单晶硅层。

公开(公告)号：US20080176367A1

公开(公告)日：2008-07-24

申请号：US12071085

申请日：2008-02-15

Applicant: Takashi Noguchi ,  Mitsuo Soneda

Inventor： Takashi Noguchi ,  Mitsuo Soneda

IPC: H01L21/8238

CPC classification number: H01L21/823814 ,  H01L21/823807

Abstract: A method for forming a Field Effect Transistor (FET) within a strain effect semiconductor layer is disclosed, whereby the source and drain of the FET are formed only in the strain effect silicon layer. The FET may be formed as a gate electrode of a p-channel type field effect transistor, and a gate electrode of a n-channel type field effect transistor on the silicon layer which has the strain effect through a gate insulating film. The sources and drains of p- and n-type diffusion layers are then formed in the silicon layer having the strain effect, on both sides of the gate electrode.

公开(公告)号：US20060246625A1

公开(公告)日：2006-11-02

申请号：US11471554

申请日：2006-06-21

Applicant: Makoto Terui ,  Yasuo Tanaka ,  Takashi Noguchi

Inventor： Makoto Terui ,  Yasuo Tanaka ,  Takashi Noguchi

IPC: H01L21/00

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3677 ,  H01L23/3733 ,  H01L24/27 ,  H01L24/81 ,  H01L29/0657 ,  H01L2224/04026 ,  H01L2224/274 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/01029 ,  H01L2924/10158 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00

Abstract: A fabricating method for a semiconductor device includes forming a heat spreading material on rear surface of the semiconductor wafer. The semiconductor wafer has a plurality of device areas and scribe lines which are arranged between the device areas. After the heat spreading material is formed on rear surface of the semiconductor wafer, the semiconductor wafer is separated at the scribe lines.

Abstract translation: 一种半导体器件的制造方法包括在半导体晶片的后表面上形成散热材料。 半导体晶片具有布置在器件区域之间的多个器件区域和划线。 在半导体晶片的后表面上形成散热材料之后，半导体晶片在划线处被分离。

公开(公告)号：US20060094212A1

公开(公告)日：2006-05-04

申请号：US11248620

申请日：2005-10-13

Applicant: Takashi Noguchi ,  Wenxu Xianyu ,  Hans Cho ,  Huaxiang Yin

Inventor： Takashi Noguchi ,  Wenxu Xianyu ,  Hans Cho ,  Huaxiang Yin

IPC: H01L21/20

CPC classification number: H01L21/02598 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66772

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.

公开(公告)号：US20050154919A1

公开(公告)日：2005-07-14

申请号：US10998751

申请日：2004-11-30

Applicant: Takashi Noguchi ,  Takayuki Noda ,  Hiromitsu Kato ,  Katsumi Kawano

Inventor： Takashi Noguchi ,  Takayuki Noda ,  Hiromitsu Kato ,  Katsumi Kawano

IPC: G06F12/14 ,  G06F21/60 ,  G06F21/62 ,  G06K17/00 ,  G06Q50/22 ,  G06Q50/24 ,  H04L9/00

CPC classification number: G06F21/35 ,  G06F21/32 ,  G06F21/6254

Abstract: A processing device has a personal authentication information receiving unit for receiving personal authentication information, a security information DB, and a processing information managing unit. The processing information managing unit converts the personal authentication information received by the personal authentication receiving unit to a user ID, detects an event concerning a processing operation, and associates the event with the user ID, thereby creating or updating an access management table for processing performance information, for storage in the security information DB. The processing information management unit then controls access to the processing performance information based on the access management table and the user ID obtained by conversion of the personal authentication information received by the personal authentication information receiving unit.

Abstract translation: 处理装置具有用于接收个人认证信息的个人认证信息接收单元，安全信息DB和处理信息管理单元。 处理信息管理单元将由个人认证接收单元接收的个人认证信息转换为用户ID，检测与处理操作有关的事件，并将事件与用户ID相关联，从而创建或更新用于处理性能的访问管理表 信息，用于存储在安全信息DB中。 处理信息管理单元然后基于由个人认证信息接收单元接收的个人认证信息的转换而获得的访问管理表和用户ID来控制对处理性能信息的访问。

公开(公告)号：US20050139919A1

公开(公告)日：2005-06-30

申请号：US10980838

申请日：2004-11-04

Applicant: Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

Inventor： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC: H01L21/20 ,  H01L21/00 ,  H01L21/336 ,  H01L27/01 ,  H01L29/786

CPC classification number: H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

Abstract: In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

Abstract translation: 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。