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    SYSTEMS, METHODS, AND DEVICES FOR SPUR AND NOISE SUPPRESSED PHOTONIC LINKS
    11.
    发明申请
    SYSTEMS, METHODS, AND DEVICES FOR SPUR AND NOISE SUPPRESSED PHOTONIC LINKS 有权

    公开(公告)号：US20210273724A1

    公开(公告)日：2021-09-02

    申请号：US16805588

    申请日：2020-02-28

    Applicant: The Boeing Company

    Inventor： Daniel Yap

    IPC: H04B10/2575 ,  H04B10/61

    Abstract: Systems, methods, and devices are disclosed for implementing photonic links. Methods include transmitting light using an optical emitter, splitting, using an input coupler, the light into a first path and a second path, the first path being provided to a modulator, and the second path being provided to a phase shifter, and combining, using an output coupler, an output of the modulator and an output of the phase shifter. Methods further include identifying a modulator phase angle that reduces a third order distortion at an output of the output coupler, applying a first bias voltage to a modulator to maintain the identified modulator phase angle, and applying a control signal to the phase shifter to maintain a phase difference between an output of the modulator and an output of a phase shifter.

    Fabricating a silicon carbide and nitride structures on a carrier substrate
    14.
    发明授权
    Fabricating a silicon carbide and nitride structures on a carrier substrate 有权

    公开(公告)号：US11361964B2

    公开(公告)日：2022-06-14

    申请号：US16874588

    申请日：2020-05-14

    Applicant: The Boeing Company

    Inventor： Samuel J. Whiteley ,  Daniel Yap ,  Edward H. Chen ,  Danny M. Kim ,  Thaddeus D. Ladd

    IPC: H01L21/02 ,  H01L21/04

    Abstract: A method, apparatus, and system for forming a semiconductor structure. A first oxide layer located on a set of group III nitride layers formed on a silicon carbide substrate is bonded to a second oxide layer located on a carrier substrate to form an oxide layer located between the carrier substrate and the set of group III nitride layers. The silicon carbide substrate has a doped layer. The silicon carbide substrate having the doped layer is etched using a photo-electrochemical etching process, wherein a doping level of the doped layer is such that the doped layer is removed and a silicon carbide layer in the silicon carbide substrate remains unetched. The semiconductor structure is formed using the silicon carbide layer and the set of group III nitride layers.

    Directional Phase Matching Optical Waveguide
    15.
    发明申请
    Directional Phase Matching Optical Waveguide 有权

    公开(公告)号：US20220107547A1

    公开(公告)日：2022-04-07

    申请号：US17450044

    申请日：2021-10-05

    Applicant: The Boeing Company

    Inventor： Daniel Yap ,  Shuoqin Wang ,  Ivan Alvarado ,  Brett Yurash ,  Thaddeus Ladd

    IPC: G02F1/365 ,  G02F1/35 ,  G02F1/377

    Abstract: An optical waveguide structure comprises a nonlinear optical waveguide comprising a nonlinear optical material having a second order nonlinear coefficient that changes with a direction of light propagation. A first portion of the nonlinear optical waveguide in which a light propagating through the first portion is affected by a positive value of a second order nonlinear coefficient. A second portion of the nonlinear optical waveguide in which the light propagating through the first portion is affected by a negative value of a second order nonlinear coefficient, wherein a set of dimensions in the nonlinear optical waveguide in the first portion and the second portion is selected to cause the light to have a phase walk-off that is an odd multiple of 180 degrees.

    OPTICAL WAVEGUIDE STRUCTURE WITH PARTIALLY OVERLAPPING LOOPS IN DIRECTION DEPENDENT MATERIAL
    16.
    发明申请
    OPTICAL WAVEGUIDE STRUCTURE WITH PARTIALLY OVERLAPPING LOOPS IN DIRECTION DEPENDENT MATERIAL 有权

    公开(公告)号：US20220107546A1

    公开(公告)日：2022-04-07

    申请号：US17450038

    申请日：2021-10-05

    Applicant: The Boeing Company

    Inventor： Daniel Yap ,  Ivan Alvarado

    IPC: G02F1/365 ,  G02F1/35 ,  G02F1/39

    Abstract: An optical waveguide structure comprises a first coupler and a second coupler that, in combination, direct a first-wavelength light to travel through a nonlinear-optical waveguide, the two couplers and an extension waveguide but not a secondary waveguide, a first resonator loop is defined for which the first-wavelength light is resonant. The two couplers, in combination, also direct a second-wavelength light to travel through the nonlinear-optical waveguide, the two couplers and the secondary waveguide but not the extension waveguide, wherein a different second resonator loop is defined for which the second-wavelength light is resonant.

    Optical Angle of Arrival Sensors and Methods for Determining an Angle of Arrival of Incident Light
    17.
    发明申请
    Optical Angle of Arrival Sensors and Methods for Determining an Angle of Arrival of Incident Light 有权
    到达传感器的光学角度和确定入射光到达角度的方法

    公开(公告)号：US20150177381A1

    公开(公告)日：2015-06-25

    申请号：US14138037

    申请日：2013-12-21

    Applicant: The Boeing Company

    Inventor： Daniel Yap ,  Donald A. Hitko ,  Hasan Sharifi ,  Oleg M. Efimov

    IPC: G01S17/42

    CPC classification number: G01S17/42 ,  F41G7/008 ,  F41G7/2253 ,  F41G7/226 ,  F41G7/2293 ,  G01B11/26 ,  G01S3/784 ,  G01S17/003

    Abstract: Optical angle of arrival sensors and methods for determining an angle of arrival of incident light are provided, wherein one sensor includes a focusing lens and an array of lateral-effect position sensing detector (LEPSD) elements. The focusing lens is configured to focus light on the array, wherein each of the LEPSD elements includes an absorber region that absorbs light of a first wavelength range that is focused on the LEPSD elements. Each of the LEPSD elements further includes at least one lateral current conducting layer that has a relatively low sheet resistance.

    Abstract translation: 提供光学入射角传感器和用于确定入射光的到达角度的方法，其中一个传感器包括聚焦透镜和横向效应位置感测检测器（LEPSD）元件阵列。 聚焦透镜被配置为将光聚焦在阵列上，其中每个LEPSD元件包括吸收聚焦在LEPSD元件上的第一波长范围的光的吸收区。 每个LEPSD元件还包括至少一个具有相对低的薄层电阻的横向电流传导层。

    Nonlinear optical waveguide structures for light generation and conversion
    19.
    发明授权
    Nonlinear optical waveguide structures for light generation and conversion 有权

    公开(公告)号：US11614673B2

    公开(公告)日：2023-03-28

    申请号：US17450046

    申请日：2021-10-05

    Applicant: The Boeing Company

    Inventor： Daniel Yap

    IPC: G02F1/365 ,  G02F1/35 ,  G02F1/39 ,  G02F1/377 ,  G02F1/37

    Abstract: An optical waveguide structure comprising a nonlinear optical waveguide, a central region, a first side region, and a second side region. The central region is located within the nonlinear optical waveguide, wherein the central region comprises a nonlinear optical material. The first side region is on a first side of the central region and the second side region is on a second side of the central region. The nonlinear optical material comprising the central region has a first nonlinear coefficient that is larger than a second nonlinear coefficient of a second material comprising the first side region and the second side region.

    Nonlinear Optical Waveguide Structures for Light Generation and Conversion
    20.
    发明申请
    Nonlinear Optical Waveguide Structures for Light Generation and Conversion 有权

    公开(公告)号：US20220107548A1

    公开(公告)日：2022-04-07

    申请号：US17450046

    申请日：2021-10-05

    Applicant: The Boeing Company

    Inventor： Daniel Yap

    IPC: G02F1/365 ,  G02F1/39 ,  G02F1/35

    Abstract: An optical waveguide structure comprising a nonlinear optical waveguide, a central region, a first side region, and a second side region. The central region is located within the nonlinear optical waveguide, wherein the central region comprises a nonlinear optical material. The first side region is on a first side of the central region and the second side region is on a second side of the central region. The nonlinear optical material comprising the central region has a first nonlinear coefficient that is larger than a second nonlinear coefficient of a second material comprising the first side region and the second side region.

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