公开(公告)号：US09812352B2

公开(公告)日：2017-11-07

申请号：US15011629

申请日：2016-01-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chich-Neng Chang ,  Ya-Jyuan Hung ,  Bin-Siang Tsai

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535

CPC classification number: H01L21/7682 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76895 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/535 ,  H01L2221/1063

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a dielectric layer is formed on the substrate, and an opening is formed in the dielectric layer, in which the dielectric layer includes a damaged layer adjacent to the opening. Next, a dielectric protective layer is formed in the opening, a metal layer is formed in the opening, and the damaged layer and the dielectric protective layer are removed.

公开(公告)号：US20170200632A1

公开(公告)日：2017-07-13

申请号：US15011629

申请日：2016-01-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chich-Neng Chang ,  Ya-Jyuan Hung ,  Bin-Siang Tsai

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76895 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/535 ,  H01L2221/1063

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a dielectric layer is formed on the substrate, and an opening is formed in the dielectric layer, in which the dielectric layer includes a damaged layer adjacent to the opening. Next, a dielectric protective layer is formed in the opening, a metal layer is formed in the opening, and the damaged layer and the dielectric protective layer are removed.