Optical elements and method for fabricating the same

    公开(公告)号:US10850462B2

    公开(公告)日:2020-12-01

    申请号:US16150804

    申请日:2018-10-03

    Abstract: A method for fabricating an optical element is provided. A substrate is provided. A plurality of metal grids are formed on the substrate. An organic layer is formed on the substrate and the metal grids. The organic layer is etched to form a first patterned organic layer including a plurality of first protrusion portions and a plurality of first trenches surrounded by the first protrusion portions. The first patterned organic layer is etched to form a second patterned organic layer including a plurality of second protrusion portions and a plurality of second trenches surrounded by the second protrusion portions. Each second protrusion portion covers one metal grid. There is a distance between the center axis of one second protrusion portion of the second patterned organic layer and the center axis of one metal grid covered by the one second protrusion portion of the second patterned organic layer.

    Image sensors
    12.
    发明授权

    公开(公告)号:US10462431B2

    公开(公告)日:2019-10-29

    申请号:US14683792

    申请日:2015-04-10

    Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter array is disposed above the semiconductor substrate. The color filter array includes a first color filter, a second color filter and a third color filter. The image sensor further includes an isolated partition disposed in the color filter array to surround one of the first, second and third color filters. The isolated partition has a refractive index that is lower than the refractive indexes of the first, second and third color filters.

    Solid-state imaging devices having a microlens layer with dummy structures

    公开(公告)号:US10170511B1

    公开(公告)日:2019-01-01

    申请号:US15616390

    申请日:2017-06-07

    Abstract: A solid-state imaging device has a sensing region, a pad region and a peripheral region between the sensing region and the pad region. The solid-state imaging device includes a plurality of photoelectric conversion elements formed in a semiconductor substrate and disposed in the sensing region, and a bond pad disposed on the semiconductor substrate and in the pad region. The solid-state imaging device further includes a microlens layer disposed above the semiconductor substrate. The microlens layer includes a microlens array in the sensing region and a first dummy structure in the pad region. The first dummy structure includes a plurality of first microlens elements disposed to surround an area of the bond pad. Moreover, the solid-state imaging device includes a passivation film conformally formed on a top surface of the microlens layer.

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