公开(公告)号：US20100190286A1

公开(公告)日：2010-07-29

申请号：US12678592

申请日：2008-08-29

Applicant: Masatsugu Kohira ,  Yasushi Funakoshi

Inventor： Masatsugu Kohira ,  Yasushi Funakoshi

IPC: H01L21/22 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/18 ,  Y02E10/547

Abstract: Disclosed is a method for manufacturing a solar cell, which includes the steps of: applying a first diffusing agent containing n-type impurities and a second diffusing agent containing p-type impurities onto a semiconductor substrate; forming a protective layer covering at least one of the first diffusing agent and the second diffusing agent; and diffusing at least one of the n-type impurities and the p-type impurities in a surface of the semiconductor substrate by heat treatment of the semiconductor substrate having the protective layer formed thereon.

Abstract translation: 公开了一种太阳能电池的制造方法，其特征在于，包括以下步骤：将含有n型杂质的第一扩散剂和含有p型杂质的第二扩散剂涂布在半导体基板上; 形成覆盖所述第一扩散剂和所述第二扩散剂中的至少一个的保护层; 并且通过对其上形成有保护层的半导体衬底进行热处理，将半导体衬底的表面中的n型杂质和p型杂质中的至少一种扩散。

公开(公告)号：US20090305456A1

公开(公告)日：2009-12-10

申请号：US11991838

申请日：2006-07-19

Applicant: Yasushi Funakoshi

Inventor： Yasushi Funakoshi

IPC: H01L31/18 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/02363 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a back junction solar cell comprises the steps of forming a first diffusion mask (9) on the back of a silicon substrate (1), printing a first etching paste (3a, 4a) on a part of the surface of the first diffusion mask (9), removing the portion of the first diffusion mask (9) where the first etching paste (3a, 4a) is printed by performing a first heating of the silicon substrate (1) to expose a part of the back of the silicon substrate (1), forming a first-conductivity-type impurity diffusion layer (6) on the exposed portion of the silicon substrate (1) by diffusing a first-conductivity-type impurity, removing the first diffusion mask (9), forming a second diffusion mask (9) on the back of the silicon substrate (1), printing a second etching paste (3b, 4b) on a part of the surface of the second diffusion mask (9), removing the portion of the second diffusion mask (9) where the second etching paste (3b, 4b) is printed by performing a second heating of the silicon substrate (1) to expose a part of the back of the silicon substrate (1), forming a second-conductivity-type impurity diffusion layer (5) on the exposed portion of the silicon substrate (1) by diffusing a second-conductivity-type impurity, and removing the second diffusion mask (9).

Abstract translation: 制造背面结太阳电池的方法包括以下步骤：在硅衬底（1）的背面上形成第一扩散掩模（9），在第一蚀刻膏（3a，4a）的一部分上印刷第一蚀刻膏 第一扩散掩模（9），通过执​​行硅衬底（1）的第一加热来去除第一蚀刻膏（3a，4a）的第一扩散掩模（9）的部分，以暴露第一蚀刻膏 硅衬底（1），通过扩散第一导电类型杂质，去除第一扩散掩模（9），在硅衬底（1）的暴露部分上形成第一导电型杂质扩散层（6） 在所述硅衬底（1）的背面形成第二扩散掩模（9），在所述第二扩散掩模（9）的所述表面的一部分上印刷第二蚀刻膏（3b，4b），除去所述第二扩散掩模 扩散掩模（9），其中通过执行所述硅胶的第二加热来印刷所述第二蚀刻浆料（3b，4b） n衬底（1），以暴露硅衬底（1）的背面的一部分，通过扩散第二导电性的方式在硅衬底（1）的暴露部分上形成第二导电型杂质扩散层（5） 型杂质，去除第二扩散掩模（9）。

公开(公告)号：US20130125967A1

公开(公告)日：2013-05-23

申请号：US13813560

申请日：2010-08-03

Applicant: Tsutomu Yamazaki ,  Yasushi Funakoshi

Inventor： Tsutomu Yamazaki ,  Yasushi Funakoshi

IPC: H01L31/065

CPC classification number: H01L31/065 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a substrate, and a plurality of strip-shaped p type impurity diffusion regions and a plurality of strip-shaped n type impurity diffusion regions in one surface of the substrate adjacently. The p type impurity diffusion region has an area ratio of not less than 60%, an area ratio larger than 80%, in particular, to the surface of the substrate.

Abstract translation: 太阳能电池在基板的一个表面中相邻地包括基板和多个条状p型杂质扩散区域和多个条形n型杂质扩散区域。 p型杂质扩散区域的面积比例不小于60％，面积比大于80％，特别是与衬底表面相比。

公开(公告)号：US20130069209A1

公开(公告)日：2013-03-21

申请号：US13699397

申请日：2011-05-13

Applicant: Kenji Fujita ,  Yasushi Funakoshi ,  Hiroyuki Oka ,  Satoshi Okamoto

Inventor： Kenji Fujita ,  Yasushi Funakoshi ,  Hiroyuki Oka ,  Satoshi Okamoto

IPC: H01L29/06 ,  H01L21/22

CPC classification number: H01L31/0682 ,  B24B27/0633 ,  H01L31/022441 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. A semiconductor substrate has a surface on which an abrasion trace is formed, and a dopant diffusion region includes a portion extending in the direction at an angle within the range of −5° to +5° with respect to the direction in which the abrasion trace extends

Abstract translation: 提供半导体器件和制造半导体器件的方法。 半导体基板具有形成磨损痕迹的表面，掺杂剂扩散区域包括相对于磨损痕迹的方向在-5°至+ 5°的范围内沿该方向延伸的部分 延伸

公开(公告)号：US20110197951A1

公开(公告)日：2011-08-18

申请号：US13060193

申请日：2009-08-03

Applicant: Yoshiya Abiko ,  Yasushi Funakoshi ,  Kyotaro Nakamura ,  Yasushi Sainoo

Inventor： Yoshiya Abiko ,  Yasushi Funakoshi ,  Kyotaro Nakamura ,  Yasushi Sainoo

IPC: H01L31/052 ,  H01L31/048 ,  H01L31/0203

CPC classification number: B23P11/022 ,  F03D80/70 ,  F05B2220/7066 ,  F05B2230/60 ,  F05B2260/98 ,  H01L31/02008 ,  H01L31/022441 ,  H01L31/048 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547 ,  Y02E10/725 ,  Y02P70/523 ,  Y10T29/49863 ,  Y10T403/16

Abstract: A solar battery module includes a wiring substrate having connection wiring on a front surface, a plurality of solar battery cells, a sealant sealing the plurality of solar battery cells mounted on the front surface of the wiring substrate, and a light-transmitting front surface protection material covering the plurality of solar battery cells sealed with the sealant. The plurality of solar battery cells each include a cell substrate and back surface electrodes disposed on a back surface of the cell substrate. The cell substrates are arranged on the front surface of the wiring substrate. The plurality of solar battery cells are mounted on the wiring substrate by electrically connecting the back surface electrodes with the connection wiring. A filler is disposed in at least a portion of a gap between the plurality of solar battery cells.

Abstract translation: 一种太阳能电池模块，包括：前表面具有连接布线的布线基板，多个太阳能电池单元，密封安装在布线基板前表面上的多个太阳能电池单元的密封剂，以及透光正面保护 覆盖用密封剂密封的多个太阳能电池单元的材料。 多个太阳能电池单元各自包括设置在电池基板的背面的电池基板和背面电极。 单元基板布置在布线基板的正面上。 多个太阳能电池单元通过将背面电极与连接布线电连接而安装在布线基板上。 在多个太阳能电池单元之间的间隙的至少一部分中设置有填料。

公开(公告)号：US20110030759A1

公开(公告)日：2011-02-10

申请号：US12936657

申请日：2009-02-26

Applicant: Yasushi Funakoshi

Inventor： Yasushi Funakoshi

IPC: H01L31/042 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/0508 ,  H01L31/022441 ,  Y02E10/50

Abstract: With screen printing, an N electrode electrically connected to an N+ layer is formed on a passivation film, and a P electrode contact electrically connected to a P+ layer is formed. Then, with screen printing, an insulating layer is formed to cover a surface of the N electrode and expose a surface of the P electrode contact. After that, with screen printing, a P electrode electrically connected to the P electrode contact is formed on the insulating layer.

Abstract translation: 通过丝网印刷，在钝化膜上形成与N +层电连接的N电极，形成与P +层电连接的P电极接触部。 然后，通过丝网印刷，形成绝缘层以覆盖N电极的表面并暴露P电极接触件的表面。 之后，通过丝网印刷，在绝缘层上形成与P电极接触电连接的P电极。

公开(公告)号：US07846823B2

公开(公告)日：2010-12-07

申请号：US12063542

申请日：2006-08-08

Applicant: Yasushi Funakoshi

Inventor： Yasushi Funakoshi

IPC: H01L21/322 ,  H01L21/38 ,  H01L21/22

CPC classification number: H01L31/06 ,  H01L21/32 ,  H01L31/03529 ,  Y02E10/50

Abstract: A masking paste used as a mask for controlling diffusion when diffusing a p-type dopant and an n-type dopant into a semiconductor substrate and forming a high-concentration p-doped region and a high concentration n-doped region is provided that contains at least a solvent, a thickening agent, and SiO2 precursor and/or a TiO2 precursor. Further, a manufacturing method of a solar cell is provided in which the masking paste is pattern-formed on the semiconductor substrate and then the p-type dopant and the n-type dopant are diffused.

Abstract translation: 在将p型掺杂剂和n型掺杂剂扩散到半导体衬底中并形成高浓度p掺杂区域和高浓度n掺杂区域时，用作掩模以用于控制扩散的掩模糊剂包含在 至少一种溶剂，增稠剂和SiO 2前体和/或TiO 2前体。 此外，提供一种太阳能电池的制造方法，其中在半导体衬底上图案形成掩模膏，然后p型掺杂剂和n型掺杂剂扩散。

公开(公告)号：US20100267187A1

公开(公告)日：2010-10-21

申请号：US12746811

申请日：2008-12-08

Applicant: Yasushi Funakoshi

Inventor： Yasushi Funakoshi

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present invention provides a method for manufacturing a solar cell, including: diffusing p type impurity into at least a portion of a first surface, which is one surface of a silicon substrate, to form a high concentration p type impurity diffusion layer; and etching one of the first surface of the silicon substrate and a second surface of the silicon substrate opposite to the first surface, using as a mask at least one of the high concentration p type impurity diffusion layer and a film formed on the high concentration p type impurity diffusion layer upon forming the high concentration p type impurity diffusion layer.

Abstract translation: 本发明提供一种太阳能电池的制造方法，包括：将p型杂质扩散到作为硅衬底的一个表面的第一表面的至少一部分中，形成高浓度p型杂质扩散层; 并且使用高浓度p型杂质扩散层和在高浓度p形成的膜中的至少一个作为掩模蚀刻硅衬底的第一表面之一和与第一表面相对的硅衬底的第二表面 在形成高浓度p型杂质扩散层时形成杂质扩散层。

公开(公告)号：US20100032012A1

公开(公告)日：2010-02-11

申请号：US12517008

申请日：2007-11-19

Applicant: Takayuki Isaka ,  Yasushi Funakoshi ,  Masatsugu Kohira

Inventor： Takayuki Isaka ,  Yasushi Funakoshi ,  Masatsugu Kohira

IPC: H01L31/0216

CPC classification number: H01L31/02168 ,  C23C16/345 ,  C23C16/56 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A solar cell (10) including a passivation film having a high effect for both a p region and an n region on a surface of a silicon substrate of the solar cell is provided. In the solar cell, a first passivation film made of a silicon nitride film is formed on a surface opposite to a light-receiving surface of the silicon substrate, and the first passivation film has a refractive index of not less than 2.6. Preferably, in the solar cell, a second passivation film including a silicon oxide film and/or an aluminum oxide film is formed between the silicon substrate and the first passivation film. Preferably, the solar cell is a back surface junction solar cell having a pn junction formed on the surface opposite to the light-receiving surface of the silicon substrate.

Abstract translation: 提供了包括对太阳能电池的硅基板的表面上的p区域和n区域具有高效果的钝化膜的太阳能电池（10）。 在太阳能电池中，在与硅衬底的光接收表面相对的表面上形成由氮化硅膜制成的第一钝化膜，并且第一钝化膜的折射率不小于2.6。 优选地，在太阳能电池中，在硅衬底和第一钝化膜之间形成包括氧化硅膜和/或氧化铝膜的第二钝化膜。 优选地，太阳能电池是在与硅衬底的光接收表面相对的表面上形成有pn结的背面结太阳能电池。

公开(公告)号：US20090142911A1

公开(公告)日：2009-06-04

申请号：US12063542

申请日：2006-08-08

Applicant: Naoki Asano ,  Yasushi Funakoshi

Inventor： Naoki Asano ,  Yasushi Funakoshi

IPC: H01L21/22

CPC classification number: H01L31/06 ,  H01L21/32 ,  H01L31/03529 ,  Y02E10/50

Abstract: A masking paste used as a mask for controlling diffusion when diffusing a p-type dopant and an n-type dopant into a semiconductor substrate and forming a high-concentration p-doped region and a high concentration n-doped region is provided that contains at least a solvent, a thickening agent, and SiO2 precursor and/or a TiO2 precursor, Further, a manufacturing method of a solar cell is provided in which the masking paste is pattern-formed on the semiconductor substrate and then the p-type dopant and the n-type dopant are diffused.

Abstract translation: 在将p型掺杂剂和n型掺杂剂扩散到半导体衬底中并形成高浓度p掺杂区域和高浓度n掺杂区域时，用作掩模以用于控制扩散的掩模糊剂包含在 至少一种溶剂，增稠剂，和SiO 2前体和/或TiO 2前体。此外，提供一种太阳能电池的制造方法，其中掩模膏在图案形成在半导体衬底上，然后是p型掺杂剂和 n型掺杂剂被扩散。