Multi-level gate driver applied to SiC MOSFET

    公开(公告)号:US12199150B2

    公开(公告)日:2025-01-14

    申请号:US17848422

    申请日:2022-06-24

    Abstract: A multi-level gate driver applied to the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) includes three parts: the SiC MOSFET information detection circuit, the signal level shifting circuit, and the segmented driving circuit. The SiC MOSFET information detection circuit includes the SiC MOSFET drain-source voltage detection circuit and the SiC MOSFET drain-source current detection circuit. The segmented driving circuit includes a turn-on segmented driving circuit and a turn-off segmented driving circuit. The SiC MOSFET drain-source voltage detection circuit and the SiC MOSFET drain-source current detection circuit process a drain-source voltage and a drain-source current during the SiC MOSFET's switching as enable signals for segmented driving; the signal level shifting circuit transfers enable signals required by the segmented driving circuit to the suitable power supply rail; and the SiC MOSFET turn-on segmented driving circuit and the turn-off segmented driving circuit select suitable driving currents.

    Scattering aperture imaging method and device, system, and storage medium

    公开(公告)号:US12181572B1

    公开(公告)日:2024-12-31

    申请号:US18652208

    申请日:2024-05-01

    Abstract: Provided are a scattering aperture imaging method and a device, a system and a storage medium. The method mainly includes four steps of scattering point position estimation, azimuth resampling, range compensation and synthetic aperture radar imaging. A phased array radar with a fixed position is used for NLOS imaging, and the radar can control a beam to scan in space, which is equivalent to a scattering aperture moving along a relay surface. Therefore, the method can realize converting NLOS imaging into LOS synthetic aperture radar imaging, which can be suitable for the situation that a relay surface is rough and the relay surface with more complicated surface condition, thus widening the application range of radar NLOS imaging.

    LATERAL POWER SEMICONDUCTOR DEVICE
    14.
    发明申请

    公开(公告)号:US20240395930A1

    公开(公告)日:2024-11-28

    申请号:US18382561

    申请日:2023-10-23

    Abstract: A lateral power semiconductor device is provided and includes a second doping type substrate, a first doping type buried layer, a second doping type epitaxial layer, a first doping type drift area, a second doping type first body area, a first doping type drain area, a first doping type source area, a second doping type second body area, a dielectric layer, a control gate, a body electrode, second doping type polysilicon and first doping type polysilicon. The control gate is led out and connected to different potentials; when the device is in an off state, the control gate is connected to a low potential to assist the drift area in depletion; and when the device is in an on state, the control gate is connected to a high potential, and more carriers are induced on a silicon surface below the control gate.

    METHOD AND SYSTEM FOR PREDICTING ADVERSE DRUG-DRUG INTERACTIONS BY RECOVERING THE MULTI-ATTRIBUTE INFORMATION OF DRUGS, AND MEDIUM

    公开(公告)号:US20240170104A1

    公开(公告)日:2024-05-23

    申请号:US18325572

    申请日:2023-05-30

    CPC classification number: G16C20/30 G16C20/70

    Abstract: The present invention discloses the method and system for predicting adverse drug-drug interactions by recovering the multi-attribute information of drugs and the medium. The method includes: collecting adverse drug-drug interactions data and multi-attribute data of drugs; constructing the recovery model of multi-attribute absent feature of drugs; correcting the recovery model of multi-attribute absent feature of drugs by the cosine similarity regularization term, and solving the corrected recovery model to obtain the common features and unique features of multi-attribute information of drugs; obtaining the multi-attribute information of two drugs, calculating common features and unique features of their multi-attribute information as the inputs of the prediction model to predict their adverse drug-drug interactions. The present invention improves the accuracy of the prediction of the adverse drug-drug interactions, promotes the experimental study of the adverse drug-drug interactions, and ensures the safety of medication.

    Blockchain-based time stamping method for digital signature

    公开(公告)号:US11936799B2

    公开(公告)日:2024-03-19

    申请号:US17032041

    申请日:2020-09-25

    CPC classification number: H04L9/3297 H04L9/3236 H04L9/3247 H04L9/50

    Abstract: A method for blockchain-based time stamping for digital signature is disclosed. The method includes two participants: a signer who signs a message, a verifier who verifies the message. In the method, the signer obtains hash values of a certain number of latest confirmed blocks in blockchain, binds these hash values and the message together to be a new message. The signer then generates a signature of the new message and inserts identification data of this signature and the new message into a transaction of blockchain. This method ensures that the generation time of the signature is prior to the generation time of the block which contains the signature and, at the same time, is after the generation time of the blocks whose hash values are included in the signature, which produces an accurate time interval for the digital signature.

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