公开(公告)号：US20030146681A1

公开(公告)日：2003-08-07

申请号：US10067625

申请日：2002-02-04

Applicant: InnoSys, Inc.

Inventor： RueyJen Hwu ,  Larry Sadwick

IPC: H01J001/46 ,  H01J021/10

CPC classification number: H01J19/08 ,  H01J21/105

Abstract: A solid state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises an anode positioned in the cavity of the substrate, a cathode suspended over the cavity of the substrate, and a grid positioned between the cathode and anode. In addition, the SSVD comprises a seal for creating a vacuum environment in the area surrounding the grid, cathode, and anode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current produced by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract translation: 固态真空装置（SSVD）及其制造方法。 在一个实施例中，SSVD形成三极管器件，其包括其中形成有腔的衬底。 SSVD还包括位于衬底的空腔中的阳极，悬浮在衬底的空腔上的阴极和位于阴极和阳极之间的栅极。 此外，SSVD包括用于在围绕栅极，阴极和阳极的区域中产生真空环境的密封。 在向阴极施加热量时，电子从阴极释放，通过栅格并被阳极接收。 响应于接收电子，阳极产生电流。 由阳极产生的电流由施加到电网的电压控制。 本发明的其它实施例提供二极管，四极管，五极管和其它高阶器件配置。

公开(公告)号：US5841219A

公开(公告)日：1998-11-24

申请号：US778789

申请日：1997-01-06

Applicant: Laurence P. Sadwick ,  R. Jennifer Hwu ,  J. Mark Baird ,  Sherman Holmes

Inventor： Laurence P. Sadwick ,  R. Jennifer Hwu ,  J. Mark Baird ,  Sherman Holmes

IPC: H01J19/08 ,  H01J21/10 ,  H01J1/62

CPC classification number: H01J19/08 ,  H01J21/105

Abstract: An integrated circuit vacuum tube array includes an insulating or highly resistive substrate, electrically conductive materials disposed on the substrate to define and surround a plurality of first voids extending from the substrate upwardly through the material, a plurality of cathodes disposed on the material to bridge over the respective first voids, for emitting electrons when heated by circuitry that selectively heats the cathodes, first electrically resistive material disposed on the electrically conductive material to surround the cathodes and define a plurality of second voids thereabove, an electrically conductive grid disposed on the electrically resistive material to project partially into the second voids to define an opening in the grid above each cathode, for allowing the passage of electrons therethrough, circuitry to selectively apply a voltage to the grid to control electron flow and thereby control the electrical current produced at the anodes, second electrically resistive material disposed on the grid to define a plurality of third voids above the openings in the grid, and a plurality of electrically conductive anodes disposed on the second electrically resistive material over the third voids to receive electrons emitted by the cathodes and thereby produce an electrical current.

Abstract translation: 集成电路真空管阵列包括绝缘或高电阻衬底，导电材料设置在衬底上以限定和围绕从衬底向上延伸通过材料的多个第一空隙，多个阴极设置在材料上以跨越 相应的第一空隙，用于当由选择性地加热阴极的电路加热时发射电子，设置在导电材料上的第一电阻材料以包围阴极并在其上限定多个第二空隙，设置在电阻上的导电栅格 材料部分地投入到第二空隙中以在每个阴极上方的栅格中限定开口，以允许电子通过其中，用于选择性地向电网施加电压以控制电子流并由此控制在阳极处产生的电流的电路 ，第二电解 设置在栅格上以在栅格中的开口上方限定多个第三空隙的多个材料，以及设置在第三空隙上的第二电阻材料上的多个导电阳极，以接收由阴极发射的电子，从而产生电 当前。