公开(公告)号：US20120164353A1

公开(公告)日：2012-06-28

申请号：US13394305

申请日：2010-09-07

Applicant: John Madocks

Inventor： John Madocks

IPC: C23C16/50 ,  C23C16/511 ,  C23C16/06

CPC classification number: C23C16/448 ,  C23C16/45514 ,  C23C16/50 ,  H01J37/3408 ,  H01J37/3485

Abstract: PECVD apparatus for depositing material onto a moving substrate is provided comprising a process chamber, a precursor gas inlet to the process chamber, a pumped outlet, and a plasma source disposed within the process chamber. The plasma source produces one or more negative glow regions and one or more positive columns. At least one positive column is disposed toward the substrate. The plasma source and precursor gas inlet are disposed relative to each other and the substrate such that the precursor gas is injected into the positive column adjacent the substrate. Apparatus is provided to channel the precursor gas into the positive column away from the negative glow region.

Abstract translation: 提供了用于将材料沉积到移动的基底上的PECVD装置，其包括处理室，处理室的前体气体入口，泵送出口和设置在处理室内的等离子体源。 等离子体源产生一个或多个负辉光区和一个或多个正列。 向衬底设置至少一个正极柱。 等离子体源和前体气体入口相对于彼此和基底设置，使得前体气体被注入邻近基底的正极柱中。 提供了将前体气体引导到远离负辉光区域的正柱中的装置。

公开(公告)号：US20100140083A1

公开(公告)日：2010-06-10

申请号：US12445565

申请日：2007-10-26

Applicant: Roel Tietema ,  Frank Papa ,  Geert Sesink ,  Rene Thomasita

Inventor： Roel Tietema ,  Frank Papa ,  Geert Sesink ,  Rene Thomasita

IPC: C23C14/54 ,  C23C14/35

CPC classification number: H01J37/3405 ,  H01J37/3299 ,  H01J37/3444 ,  H01J37/3485

Abstract: A dual magnetron sputtering power supply for use with a magnetron sputtering apparatus having at least first and second sputtering cathodes for operation in the dual magnetron sputtering mode, there being a means for supplying a flow of reactive gas to each of said first (1) and second (4) cathodes via first (12) and second (14) flow control valves each associated with a respective one of said first and second cathodes and each adapted to control a flow of reactive gas to the respectively associated cathode, the power supply having, for each of said first and second cathodes a means for deriving a feed-back signal relating to the voltage prevailing at that cathode, a control circuit for controlling the flow of reactive gas to the respectively associated cathode by controlling the respective flow control valve and adapted to adjust the respective flow control valve to obtain a voltage feedback signal from the respective cathode corresponding to a set point value set for that cathode. Also claimed is a magnetron sputtering apparatus in combination with such a power supply.

Abstract translation: 一种双磁控溅射电源，其用于具有至少第一和第二溅射阴极的磁控溅射装置，用于在双磁控溅射模式下操作，存在用于将反应性气体流供应到所述第一（1）和 第二（4）阴极经由第一（12）和第二（14）个流量控制阀，每个与所述第一和第二阴极中的相应一个相关联，并且每个阴极适于控制到分别相关联的阴极的反应气体的流动，所述电源具有 对于所述第一和第二阴极中的每一个，用于导出与在该阴极处存在的电压相关的反馈信号的装置，用于通过控制相应的流量控制阀来控制反应气体流向相应的阴极的控制电路，以及 适于调节相应的流量控制阀以从相应阴极获得对应于为该阴极设定的设定值的电压反馈信号。 还要求保护的是与这种电源组合的磁控溅射装置。

公开(公告)号：US20050023130A1

公开(公告)日：2005-02-03

申请号：US10898956

申请日：2004-07-27

Applicant: Yasuyuki Suzuki ,  Koji Teranishi

Inventor： Yasuyuki Suzuki ,  Koji Teranishi

IPC: G02B5/08 ,  C23C14/00 ,  C23C14/06 ,  C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  G02B1/11 ,  H01J37/34

CPC classification number: H01J37/3485 ,  C23C14/0057 ,  C23C14/0068 ,  C23C14/0694 ,  C23C14/35 ,  F02D41/1456 ,  H01J37/3405 ,  Y02T50/67

Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

Abstract translation: 在反应性溅射装置中，惰性气体供给孔设置在其一端敞开并且其电导被控制的可动目标单元中，并且至少含有氟或氧的反应性气体可以供应到靶和 底物。 该装置被构造成朝向基板发射反应性气体。 反应气体发射位置在靶和衬底之间的空间中，使得衬底表面上的反应气体的浓度可以保持在更高的水平。 当目标移动时，移动反应气体发射端口或改变反应气体发射位置。 可以有效地保持基板表面上的反应气体的浓度恒定，并且可以形成高质量的光学薄膜。

公开(公告)号：US20230257866A1

公开(公告)日：2023-08-17

申请号：US18128672

申请日：2023-03-30

Applicant: Carl Zeiss SMT GmbH

Inventor： Anastasia GONCHAR ,  Joern WEBER ,  Vitaliy SHKLOVER

IPC: C23C14/00 ,  C23C14/35 ,  C23C14/34 ,  H01J37/34 ,  H01J37/32 ,  G21K1/06 ,  G03F7/20

CPC classification number: C23C14/0036 ,  C23C14/352 ,  C23C14/3485 ,  C23C14/3471 ,  C23C14/3421 ,  H01J37/3405 ,  H01J37/32357 ,  H01J37/3417 ,  H01J37/345 ,  H01J37/3467 ,  G21K1/06 ,  H01J37/3485 ,  G03F7/70958 ,  G03F7/70316 ,  G03F7/70033 ,  H01J2237/332 ,  G21K2201/067

Abstract: A method for producing an optical element (2), in particular for a projection exposure system (400), according to which a protective layer (11) consisting of a protective material is applied to a surface of a main body (7) until a protective layer thickness is obtained. The main body (7) has a substrate (17) and a reflective layer (18) applied to the substrate (17). The protective layer (11) is at least substantially defect-free.

公开(公告)号：US11710624B2

公开(公告)日：2023-07-25

申请号：US17075484

申请日：2020-10-20

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Bingliang Guo ,  Huaichao Ma ,  Andong Sun ,  Henan Zhang ,  Boyu Dong ,  Lu Zhang ,  Yujing Chen

IPC: H01J37/34 ,  H01L21/02 ,  C23C14/54 ,  C23C14/06 ,  C23C14/34

CPC classification number: H01J37/3464 ,  C23C14/3492 ,  C23C14/54 ,  C23C14/541 ,  C23C14/542 ,  H01J37/3447 ,  H01J37/3476 ,  H01J37/3485 ,  H01J37/3488 ,  H01L21/02266 ,  C23C14/0617

Abstract: A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

公开(公告)号：US09928998B2

公开(公告)日：2018-03-27

申请号：US15045639

申请日：2016-02-17

Applicant: CANON ANELVA CORPORATION

Inventor： Yohsuke Shibuya

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/56 ,  C23C14/35 ,  B08B7/00

CPC classification number: H01J37/3476 ,  B08B7/00 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3405 ,  H01J37/3455 ,  H01J37/3461 ,  H01J37/3482 ,  H01J37/3485

Abstract: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

公开(公告)号：US20140311892A1

公开(公告)日：2014-10-23

申请号：US14362758

申请日：2012-11-23

Applicant: Oerlikon Trading AG, Trubbach

Inventor： Siegfried Krassnitzer

IPC: C23C14/34

CPC classification number: C23C14/3485 ,  C23C14/0094 ,  C23C14/3492 ,  H01J37/3467 ,  H01J37/3485

Abstract: Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm2 at the target surface, such that the material transitioning to the gas phase is ionized. Reactive gas flow is established and reacts with the material of the target surface. Voltage pulse duration is such that, during the pulse, the target surface where the current flows is at least partly covered most of the time with a compound composed of reactive gas and target material and, consequently, the target surface is in a first intermediate state, and this covering is smaller at the end of the voltage pulse than at the start and, consequently, the target surface is in a second intermediate state at the end of the voltage pulse.

Abstract translation: 反应溅射，其中通过离子轰击，材料从靶的表面喷射并转变到气相。 向目标施加负电压脉冲，以在目标表面建立电流密度大于0.5A / cm 2的电流，使得转移到气相的材料被电离。 建立反应性气体流动并与目标表面的材料反应。 电压脉冲持续时间使得在脉冲期间，电流流动的目标表面至少部分地被由反应性气体和靶材料组成的化合物大部分地覆盖，因此目标表面处于第一中间状态 并且该覆盖在电压脉冲结束时比在开始时更小，因此，目标表面在电压脉冲结束时处于第二中间状态。

公开(公告)号：US20130277213A1

公开(公告)日：2013-10-24

申请号：US13922353

申请日：2013-06-20

Applicant: CANON ANELVA CORPORATION

Inventor： Yohsuke SHIBUYA

IPC: C23C14/35

CPC classification number: H01J37/3476 ,  B08B7/00 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3405 ,  H01J37/3455 ,  H01J37/3461 ,  H01J37/3482 ,  H01J37/3485

Abstract: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit of change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

Abstract translation: 本发明提供一种能够确定目标的表面状态以执行对必要部件的准确和快速清洁的装置。 该装置包括：能够在目标表面上形成磁场的磁体单元; 能够驱动所述磁体单元以改变所述磁场图案的旋转系统; 以及电流计，被配置为当由磁体单元形成磁场时测量目标电流，并且对目标附着的目标电极施加放电电压。 通过旋转系统不同地改变磁体单元的位置，并且在每个位置测量目标电流并与参考值进行比较。 然后确定是否需要在每个位置进行清洁，从而可以仅对必需的部分执行清洁。

公开(公告)号：US20110051115A1

公开(公告)日：2011-03-03

申请号：US12850706

申请日：2010-08-05

Applicant: Yoshimitu Shimane ,  Nobuo Yamaguchi

Inventor： Yoshimitu Shimane ,  Nobuo Yamaguchi

IPC: G03B27/60 ,  G03B27/58

CPC classification number: H01L21/682 ,  C23C14/042 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3485

Abstract: The present invention provides a mask alignment mechanism which reduces the occurrence of particles and which aligns a mask with high accuracy, and a vacuum processing apparatus including such a mask alignment mechanism. A mask alignment mechanism according to one embodiment of the present invention includes a substrate holder which is movable up and down when a substrate is transferred and on which four taper pins are formed, and a mask in which grooves are formed. The taper pins can be inserted into the grooves, respectively. The taper pins include a pair of long taper pins and a pair of short taper pins. The taper pins in each pair are disposed to face each other across the substrate. Tapered surfaces formed in the long taper pins and tapered surfaces formed in the short taper pins are located at different heights.

Abstract translation: 本发明提供一种掩模对准机构，其减少了颗粒的发生并且高精度地对准掩模，以及包括这种掩模对准机构的真空处理装置。 根据本发明的一个实施方式的掩模对准机构包括：基板保持器，当基板被转印并且其上形成有四个锥形销时可上下移动，并且形成有凹槽的掩模。 锥形销可以分别插入槽中。 锥形销包括一对长锥形销和一对短锥销。 每对中的锥形销设置成跨越衬底彼此面对。 形成在长锥销中的锥形表面和形成在短锥销中的锥形表面位于不同的高度。