Abstract:
The invention concerns an ellipsometer comprising: a source (2) capable of emitting a broadband ray (4), a polarizer (10) for producing a polarised incident beam (12) adapted to illuminate a sample (16) according to at least a selected angle; an analyzer (24) providing an output beam (28) in response to said reflected beam (20) and at least a reflecting optical element (14) arranged between the source (2) and the sample (16) and/or between the sample (16) and the sensor, and capable of focusing the incident beam (12) and/or the reflected beam (20) according to a selected spot The ellipsometer further comprises at least a first refracting optical element (22) arranged between the sample (16) and the sensor and/or between the source (2) and the sample (16) to collect and focus said reflected beam and/or said incident beam, thereby enabling to provide at least a refracting element (22) and a reflecting element (14) on either side of the sample (16) and hence to place the source and the sensor on the same side relative to said spot.
Abstract:
A system and method for performing a magnetic imaging, optical profiling, and measuring lubricant thickness and degradation, carbon wear, carbon thickness, and surface roughness of thin film magnetic disks and silicon wafers at angles that are not substantially Brewster's angle of the thin film (carbon) protective overcoat is provided. The system and method involve a focused optical light whose polarization can be switched between P or S polarization is incident at an angle to the surface of the thin film magnetic disk. This generates both reflected and scattered light that may be measured to determine various values and properties related to the surface of the disk, including identifying the Kerr-effect in reflected light for determination of point magnetic properties. In addition, the present invention can mark the position of an identified defect.
Abstract:
This invention provides a method of obtaining accurate measurements of polarization dependent loss and insertion loss during the tests aiming at measuring the polarization properties of optical components. This is achieved by taking into account every polarization disturbance in the line between generation of known states of polarization and the device under test. The method involves computing within a desired range of wavelengths either the transfer matrix of each polarization perturbing element or of all polarization perturbing elements as a whole, and compensating for errors introduced by these polarization perturbing elements.
Abstract:
A method and apparatus for determining polarization-resolved scattering parameters of an optical device. A method comprises stimulating a port of the optical device with a stimulation field having at least two polarization states, measuring the optical field emerging from the port in amplitude and phase, and calculating the scattering parameters using the measurements. By stimulating a port of an optical device with a stimulation field having at least two different polarization states, measurements needed to determine scattering parameters of the optical device can be conducted by stimulating the port with only one sweep of a swept optical source.
Abstract:
A composite metrology tool, measures basic optical parameters of thin films (e.g., thickness, index of refraction, and birefringence) and stress (e.g., wafer displacements, such as bow and warp). These measurements are combined (e.g. in a processor) using optimization techniques to yield accurate overall information of the wafer parameters.
Abstract:
A system for analyzing a thin film uses an energy beam, such as a laser beam, to remove a portion of a contaminant layer formed on the thin film surface. This cleaning operation removes only enough of the contaminant layer to allow analysis of the underlying thin film, thereby enhancing analysis throughput while minimizing the chances of recontamination and/or damage to the thin film. An energy beam source can be readily incorporated into a conventional thin film analysis tool, thereby minimizing total analysis system footprint. Throughput can be maximized by focusing the probe beam (or probe structure) for the analysis operation at the same location as the energy beam so that repositioning is not required after the cleaning operation. Alternatively, the probe beam (structure) and the energy beam can be directed at different locations to reduce the chances of contamination of the analysis optics.
Abstract:
An ellipsometer for aligning incident angle comprising: a main frame shaping half circle and flat surface on which a plurality of grooves are radial and circumferential directionally carved; a specimen stage, which is installed at the groove-caved surface of the main frame, for tilting a specimen on a upper surface of the specimen stage with respect to horizontal direction and translating the specimen upward and downward; a polarizing unit, which is capable of fixing and moving on the groove-carved surface of the main frame, for polarizing a light from a light source and outputting the polarized light to the specimen, and moving on the groove-carved surface; and a light detecting unit, which is capable of fixing and moving on the groove-carved surface, for a reflection light from the specimen.
Abstract:
Wavelength dependent measurement is made by launching light into an object 8 to be measured and receiving transmitted light from the object 8 while continuously changing wavelengths of output light. Next, peak wavelength detection processing for detecting a wavelength at the time when loss or gain of the transmitted light from the object 8 becomes maximum based on a wavelength dependent measurement result is performed. Then, polarization dependent loss measurement processing for measuring polarization dependent loss of the object 8 is performed by measuring the transmitted light from the object 8 while launching light of a measurement wavelength detected into the object 8 and randomly changing a polarization state of the light. Further, a control circuit processes associating a wavelength dependent analysis result with a PDL measurement result, and displays its result on a display part 2.
Abstract:
Methods and instruments are provided for measuring differences in fractional reflectivity changes between transverse electric (TE or s-polarized) and transverse magnetic (TM or p-polarized components of an obliquely incident light with high sensitivity and low noise. Also provided are high sensitivity, low noise methods and instruments for measuring differences in fractional reflectivity changes between R-polarized (right-circularly polarized) and L-polarized (left-circularly polarized) components of a near-normal incident light. The methods take advantage of a nulling step to minimize harmonics of the optical signal derived from a first sample. Determination of odd and even harmonics of the optical signal derived from a second sample allows determination of refractive index and optical absorption coefficient differences between two samples to be determined with high sensitivity and low noise.
Abstract:
An optical apparatus that measures a polarization dependent characteristic of a measured object includes a light source for emitting non-linearly polarized light in an extreme ultraviolet region or an X-ray region, and a rotary polarizer for reflecting the light emitted from the light source, the polarizer including a set of mirrors repeating three or more reflections and being arranged such that an optical axis of incident light and that of outgoing light are aligned with the same straight line.