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    Electronic device with an upscaling processor and associated methods
    224.
    发明授权
    Electronic device with an upscaling processor and associated methods 有权

    公开(公告)号：US10075702B2

    公开(公告)日：2018-09-11

    申请号：US15204185

    申请日：2016-07-07

    Applicant: STMICROELECTRONICS SA

    Inventor： Olivier Pothier ,  Arnaud Bourge

    IPC: G06T3/40 ,  H04N13/271 ,  H04N13/02

    CPC classification number: H04N13/271 ,  G06T3/40 ,  H04N13/139 ,  H04N2013/0081

    Abstract: An electronic device includes a single-photon avalanche diode (SPAD) array and readout circuitry coupled thereto. The readout circuitry generates a depth map having a first resolution, and a signal count map having a second resolution greater than the first resolution. The depth map corresponds to distance observations to an object. The signal count map corresponds to intensity observation sets of the object, with each intensity observation set including intensity observations corresponding to a respective distance observation in the depth map. An upscaling processor is coupled to the readout circuitry to calculate upscaling factors for each intensity observation set so that each distance observation has respective upscaling factors associated therewith. The depth map is then upscaled from the first resolution to the second resolution based on the respective upscaling factors.

    Method for patterning a thin film
    228.
    发明授权
    Method for patterning a thin film 有权

    公开(公告)号：US10014183B2

    公开(公告)日：2018-07-03

    申请号：US15523742

    申请日：2015-11-09

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS SA

    Inventor： Shay Reboh ,  Laurent Grenouillet ,  Yves Morand

    IPC: H01L21/308 ,  H01L21/311 ,  H01L27/12

    CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/31144 ,  H01L27/1203

    Abstract: A method for producing at least one pattern in a layer resting on a substrate, including: a) making amorphous at least one first block of an upper layer of crystalline material resting on a first amorphous supporting layer, while the crystalline structure of a second block of the upper layer that adjoins and is juxtaposed with the first block is preserved; b) partially recrystallizing the first block by using at least one side surface of the second block that is in contact with the first block as an area for the start of a recrystallization front, the partial recrystallization being carried out to preserve a region of amorphous material in the first block; c) selectively etching the amorphous material of the upper layer with respect to the crystalline material of the upper layer to form at least one first pattern in the upper layer.

    Photodetector on silicon-on-insulator
    229.
    发明授权
    Photodetector on silicon-on-insulator 有权

    公开(公告)号：US09997550B2

    公开(公告)日：2018-06-12

    申请号：US14627038

    申请日：2015-02-20

    Applicant: STMicroelectronics SA

    Inventor： Bruno Rauber

    IPC: H01L27/14 ,  H01L31/101 ,  H01L31/11 ,  H01L27/144

    CPC classification number: H01L27/1446 ,  H01L31/101 ,  H01L31/11

    Abstract: A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.

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