公开(公告)号：US07084502B2

公开(公告)日：2006-08-01

申请号：US10773114

申请日：2004-02-04

Applicant: Harald Böttner ,  Axel Schubert ,  Joachim Nurnus ,  Martin Jagle

Inventor： Harald Böttner ,  Axel Schubert ,  Joachim Nurnus ,  Martin Jagle

IPC: H01L23/48 ,  H01L21/00 ,  H01L21/76

CPC classification number: H01L35/32 ,  B81B3/0072 ,  B81C2201/0167 ,  H01L35/04

Abstract: A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.

Abstract translation: 一种微机电装置及其制造方法，在基板上具有至少一层，特别是基板上的热电层，所述至少一层的热膨胀系数和基板的热膨胀系数大大不同。 至少一个层耦合到至少一个应力减小装置，用于目标地减小存在于该层中的横向机械应力。 这实现了无应力层或实现无压力生长。

公开(公告)号：US20060166403A1

公开(公告)日：2006-07-27

申请号：US11242960

申请日：2005-10-05

Applicant: Luc Ouellet ,  Robert Antaki

Inventor： Luc Ouellet ,  Robert Antaki

IPC: H01L21/50 ,  H01L21/48 ,  H01L21/44

CPC classification number: B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

Abstract translation: 通过在公共衬底上制造包括多个电子部件的电子器件，在公共衬底上制造微电子机械（MEM）器件和电子器件，在电子器件上沉积热稳定的互连层，封装互连 具有保护层的电子器件，在保护层上形成牺牲层，牺牲层中的开孔和保护层，以允许MEM器件与电子器件的连接，通过沉积和图案化制造MEM器件至少一个 非晶硅层，并且去除牺牲层的至少一部分。 以这种方式，MEM装置可以在同一基板上的电子装置之后制造。

公开(公告)号：US07057262B2

公开(公告)日：2006-06-06

申请号：US10782297

申请日：2004-02-18

Applicant: Michael Goldstein

Inventor： Michael Goldstein

IPC: H01L23/58

CPC classification number: B81C1/00666 ,  B81B2201/042 ,  B81C2201/0167 ,  G02B5/0833 ,  G02B26/0833 ,  Y10S438/954

Abstract: An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).

公开(公告)号：US20060110895A1

公开(公告)日：2006-05-25

申请号：US11254774

申请日：2005-10-21

Applicant: Luc Ouellet ,  Robert Antaki

Inventor： Luc Ouellet ,  Robert Antaki

IPC: H01L21/20 ,  H01L21/205

CPC classification number: B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

Abstract: A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100 Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100 Mpa.

Abstract translation: 公开了一种制造硅基微结构的方法，其包括沉积掺杂有第一和第二掺杂剂的导电非晶硅，以产生具有小于+ / = 100Mpa的残余机械应力的结构。 掺杂剂可以连续沉积以产生具有小于+ / = 100Mpa的残余机械应力或同时产生具有小于+ / = 100Mpa的机械应力的层压结构的层压结构。

公开(公告)号：US06922272B1

公开(公告)日：2005-07-26

申请号：US10367440

申请日：2003-02-14

Applicant: Wilhelmus de Groot ,  Dinesh Maheshwari

Inventor： Wilhelmus de Groot ,  Dinesh Maheshwari

IPC: B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  G02B26/00

CPC classification number: B81C1/00666 ,  B81B2203/0109 ,  B81C2201/0167 ,  G02B26/0808

Abstract: A MEMS device such as a grating light valve™ light modulator is athermalized such that the force required to deflect the movable portion of the MEMS device remains constant over a range of temperatures. In MEMS embodiments directed to a grating light valve™ light modulator, a ribbon is suspended over a substrate, and the ribbon tension is kept constant over a temperature range by adjusting the aggregate thermal coefficient of expansion of the ribbon to match the aggregate thermal coefficient of expansion of the substrate. Various opposition materials have an opposite thermal coefficient of expansion as the aluminum layer of a grating light valve™ light modulator ribbon, using the thermal coefficient of expansion of the substrate as a zero coefficient reference. The adjustment of the thermal coefficient of expansion of the ribbon can be performed variously by thickening existing layers of opposition material or adding additional layers of new opposition material to the ribbon, or reducing the aluminum in aluminum layer. The aluminum layer may be reduced variously by reducing the thickness of the aluminum layer, or reducing the surface area that the aluminum covers, or reducing both the surface area and the thickness. Embodiments may combine the reduction of aluminum with the use of opposition materials.

Abstract translation: 诸如光栅光阀（TM）光调制器之类的MEMS器件被非热化，使得偏转MEMS器件的可移动部分所需的力在一个温度范围内保持恒定。 在针对光栅光阀（TM）光调制器的MEMS实施例中，色带悬挂在衬底上，并且通过调节色带的聚集体热膨胀系数以匹配聚集体热量，色带张力在温度范围内保持恒定 基材膨胀系数。 各种对立材料具有与光栅光阀（TM）光调制器带的铝层相反的热膨胀系数，使用基板的热膨胀系数作为零系数参考。 色带的热膨胀系数的调整可以通过增加现有的对立材料层或者向色带添加新的对立材料层，或者减少铝层中的铝来进行各种各样的调整。 可以通过减少铝层的厚度或减少铝覆盖的表面积或减小表面积和厚度来使铝层各不相同。 实施例可以将铝的减少与对立材料的使用相结合。

公开(公告)号：US20050079648A1

公开(公告)日：2005-04-14

申请号：US10952757

申请日：2004-09-30

Applicant: Jidong Hou

Inventor： Jidong Hou

IPC: B81B3/00 ,  H01L21/00

CPC classification number: B81B3/0072 ,  B81C2201/0167

Abstract: A method to change the profile of released membranes is disclosed. This method is to form an island structure at certain regions of membranes. Membranes comprise one or several layers of different materials, and at least one layer has intrinsic or residual stress. The profile of membrane will change from being flat to curved at the region of island structure when membranes are released from sacrificial layers.

Abstract translation: 公开了改变释放膜的轮廓的方法。 该方法是在膜的某些区域形成岛状结构。 膜包含一层或多层不同的材料，至少有一层具有固有或残余应力。 当膜从牺牲层释放时，膜的轮廓将在岛结构的区域从平坦变化到弯曲。

公开(公告)号：US20050069687A1

公开(公告)日：2005-03-31

申请号：US10670554

申请日：2003-09-25

Applicant: Phillip Barth

Inventor： Phillip Barth

IPC: B32B7/02 ,  B81B1/00 ,  B81B3/00 ,  B81C1/00 ,  B81C99/00 ,  B82B3/00

CPC classification number: B81B3/0072 ,  B81B2203/0127 ,  B81B2203/0353 ,  B81C2201/0167 ,  Y10T428/24942 ,  Y10T428/24975

Abstract: An apparatus and method for making a composite tensile diaphragm having a nanopore. The apparatus provides a tensile layer in contact with a compressive layer. A small region of the tensile layer is removed to expose a small portion of the compressive layer. The compressive region of the tensile layer is small enough to avoid the buckling or wrinkling of the material. The apparatus has a length to thickness ratio from 10 to 60. Also disclosed is a method of making the apparatus.

Abstract translation: 一种用于制造具有纳米孔的复合拉伸隔膜的装置和方法。 该装置提供与压缩层接触的拉伸层。 去除拉伸层的小区域以暴露压缩层的一小部分。 拉伸层的压缩区域足够小以避免材料的翘曲或起皱。 该装置的长度与厚度之比为10至60.还公开了制造该装置的方法。

公开(公告)号：US06756285B1

公开(公告)日：2004-06-29

申请号：US09913006

申请日：2002-01-09

Applicant: Hubert Moriceau ,  Olivier Rayssac ,  Anne-Marie Cartier ,  Bernard Aspar

Inventor： Hubert Moriceau ,  Olivier Rayssac ,  Anne-Marie Cartier ,  Bernard Aspar

IPC: H01L2102

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  H01L21/185 ,  H01L21/76254 ,  Y10T428/12528 ,  Y10T428/31678

Abstract: A multilayer structure with controlled internal stresses comprising, in this order, a first main layer (110a), at least a first constraint adaptation layer (130) in contact with the first main layer, at least a second stress adaptation layer (120) put into contact by adhesion with said first stress adaptation layer, and a second main layer (110b) in contact with the second stress adaptation layer, the first and second stress adaptation layers having contact stresses with the first and second main layers. Application to the realization of electronic circuits and membrane devices.

Abstract translation: 具有受控的内部应力的多层结构，依次包括第一主层（110a），至少与第一主层接触的第一约束适应层（130），至少第二应力适应层（120） 通过与所述第一应力适应层的粘合接触，以及与第二应力适应层接触的第二主层（110b），第一和第二应力适应层具有与第一和第二主层的接触应力。应用于实现 的电子电路和膜装置。

公开(公告)号：US06642067B2

公开(公告)日：2003-11-04

申请号：US09963142

申请日：2001-09-24

Applicant: Paul W. Dwyer

Inventor： Paul W. Dwyer

IPC: G01R3126

CPC classification number: B81C99/0035 ,  B81C1/00666 ,  B81C99/0065 ,  B81C2201/0167

Abstract: A method for delicately adjusting an orientation of features in completed micro-machined electromechanical sensor (MEMS) devices after initial formation and installation within the device packaging to trim one or more performance parameters of interest, including modulation, bias and other dynamic behaviors of the MEMS devices.

公开(公告)号：US20030196489A1

公开(公告)日：2003-10-23

申请号：US10461036

申请日：2003-06-13

Applicant: Honeywell International, Inc.

Inventor： Paul W. Dwyer

IPC: G01P015/02 ,  G01P021/00

CPC classification number: B81C99/0035 ,  B81C1/00666 ,  B81C99/0065 ,  B81C2201/0167

Abstract: A method for delicately adjusting an orientation of features in completed micro-machined electromechanical sensor (MEMS) devices after initial formation and installation within the device packaging to trim one or more performance parameters of interest, including modulation, bias and other dynamic behaviors of the MEMS devices.