Abstract:
There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a priming material to form a priming layer; exposing the priming layer patternwise with radiation resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from the unexposed areas resulting in a first layer having a pattern of developed priming layer, wherein the pattern of developed priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid depositions on the pattern of developed priming layer on the first layer. The priming material has at least one unit of Formula I In Formula I: R1 through R6 are D, alkyl, aryl, or silyl, where adjacent R groups can join together to form an aromatic ring; X is a single bond, H, D, or a leaving group; Y is H, D, alkyl, aryl, silyl, or vinyl; a-f are an integer from 0-4; m, p and q are an integer of 0 or greater.
Abstract:
There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a priming material to form a priming layer; exposing the priming layer patternwise with radiation resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from the unexposed areas resulting in a first layer having a pattern of priming layer, wherein the pattern of priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid depositions on the pattern of priming layer on the first layer. The priming material has Formula I In Formula I: Ar1 through Ar4 are the same or different and are aryl groups; L is a spiro group, an adamantyl group, bicyclic cyclohexyl, deuterated analogs thereof, or substituted derivatives thereof; R1 is the same or different at each occurrence and is D, F, alkyl, aryl, alkoxy, silyl, or a crosslinkable group, where adjacent R1 groups can be joined together to form an aromatic ring; R2 is the same or different at each occurrence and is H, D, or halogen; a is the same or different at each occurrence and in an integer from 0-4; and n is an integer greater than 0.
Abstract:
This invention relates to deuterated compounds that are useful in electroluminescent applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.
Abstract:
This invention relates to at least one deuterated aryl-anthracene compound of a combination useful in electronic applications. It also relates to electronic devices in which the active layer includes two distinct aryl-anthracene acompounds with at least one of the compounds containing some deuteration.
Abstract:
This invention relates to deuterated aryl-anthracene compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.
Abstract:
There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes the steps of providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of −25 to 80° C. and under a vacuum in the range of 10−6 to 1,000 Torr, for a first period of 1-100 minutes, to form a partially dried layer; and heating the partially dried layer to a temperature above 100° C. for a second period of 1-50 minutes to form a dried layer.
Abstract:
This invention relates to deuterated aryl-anthracene compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.