公开(公告)号：US20120320100A1

公开(公告)日：2012-12-20

申请号：US13487954

申请日：2012-06-04

Applicant: Akio Machida ,  Yukinari Sakamoto ,  Mieko Kuwahara

Inventor： Akio Machida ,  Yukinari Sakamoto ,  Mieko Kuwahara

IPC: G09G5/00 ,  G09G5/10

CPC classification number: G02B27/017 ,  G02B2027/0118

Abstract: A display apparatus includes: a spectacle type frame mounted on a head portion of an observer; and an image display apparatus installed in the frame. The image display apparatus includes an image forming device, and an optical device allowing light output from the image forming device to be incident thereon, to be guided therein, and to be output therefrom. A dimmer which adjusts the amount of external light incident from the outside is disposed in an area of the optical device where the light is output. The dimmer includes a first transparent substrate and a second transparent substrate facing the first substrate, first and second electrodes which are mounted on the first and second substrates, respectively, and an electrolyte sealed between the first and second substrates and containing metal ions. The first electrode includes a conductive material of a fine line shape. The second electrode includes a transparent electrode layer.

Abstract translation: 一种显示装置，包括：安装在观察者头部的眼镜架; 以及安装在框架中的图像显示装置。 图像显示装置包括图像形成装置和允许从图像形成装置输出的光入射到其上的光学装置，并在其中被输出。 调整从外部入射的外部光量的调光器设置在输出光的光学装置的区域中。 调光器包括第一透明基板和面向第一基板的第二透明基板，分别安装在第一和第二基板上的第一和第二电极以及密封在第一和第二基板之间并包含金属离子的电解质。 第一电极包括细线形状的导电材料。 第二电极包括透明电极层。

公开(公告)号：US20120306940A1

公开(公告)日：2012-12-06

申请号：US13467779

申请日：2012-05-09

Applicant: Akio Machida ,  Kenichi Takahashi ,  Hidehiko Takanashi ,  Kenji Suzuki

Inventor： Akio Machida ,  Kenichi Takahashi ,  Hidehiko Takanashi ,  Kenji Suzuki

IPC: G09G5/10 ,  G09G3/34 ,  G09G5/00

CPC classification number: G02B27/0172 ,  G02B6/005 ,  G02B27/0176 ,  G02B2027/0118 ,  G02B2027/0178 ,  G02F1/133524 ,  G02F1/167 ,  G02F2201/44 ,  G06T19/006 ,  G09G3/3406 ,  G09G3/344 ,  G09G2360/144

Abstract: A display apparatus includes: (i) a glasses-type frame that is mounted on the head of an observer; and (ii) an image display device that is attached to the frame, wherein the image display device includes (A) an image forming device, and (B) an optical device on which light emitted from the image forming device is incident, in which the light is guided, and from which the light is emitted, a light control device that adjusts an amount of external light incident from the outside is provided in a region of the optical device from which light is emitted, and the light control device includes two opposite transparent substrates, electrodes that are provided on the substrates, and an electrophoretic dispersion liquid that is sealed between the two substrates.

Abstract translation: 显示装置包括：（i）安装在观察者的头部上的眼镜型框架; 和（ii）安装在框架上的图像显示装置，其中图像显示装置包括（A）图像形成装置，以及（B）从图像形成装置发射的光入射的光学装置，其中 光被引导，从其发射光，在发出光的光学装置的区域中设置有调节从外部入射的外部光量的光控制装置，并且光​​控制装置包括两个 相对的透明基板，设置在基板上的电极和密封在两个基板之间的电泳分散液。

公开(公告)号：US20100051830A1

公开(公告)日：2010-03-04

申请号：US12507985

申请日：2009-07-23

Applicant: Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

Inventor： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

IPC: H01L21/02

CPC classification number: H01L21/02691 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0676 ,  H01L21/02678 ,  H01L21/268

Abstract: A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

Abstract translation: 一种半导体处理装置，包括：要安装具有要加工的半导体膜的衬底的阶段; 供给部，其以使得能量束的照射点以给定间隔对准的方式将多个能量束提供到安装在台上的半导体膜上; 以及控制部，其使所述多个能量束和所述基板相对于与所述供给部供给的所述多个能量束的照射点的排列不平行的方向移动，并且利用所述照射来扫描所述半导体膜 多个能量束的点平行，从而控制半导体膜上的热处理。

公开(公告)号：US07538014B2

公开(公告)日：2009-05-26

申请号：US11553054

申请日：2006-10-26

Applicant: Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

Inventor： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC: H01L21/00

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

Abstract: Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

Abstract translation: 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US07521712B2

公开(公告)日：2009-04-21

申请号：US11685550

申请日：2007-03-13

Applicant: Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

Inventor： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC: H01L29/76

CPC classification number: H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

Abstract: A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

Abstract translation: 提供一种薄膜半导体器件，其包括半导体薄膜和栅电极。 半导体薄膜通过能量束的照射使有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。

公开(公告)号：US20080054266A1

公开(公告)日：2008-03-06

申请号：US11683272

申请日：2007-03-07

Applicant: Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

Inventor： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC: H01L29/04 ,  H01L21/336

CPC classification number: H01L29/78696 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.

Abstract translation: 提供薄膜半导体器件。 半导体器件包括通过照射能量束而使活性区域变为多晶区域的半导体薄膜，以及配置为穿过有源区域的栅电极。 相继的晶粒边界在作为与栅电极重叠的有源区的沟道部分中沿着栅电极延伸，并且晶界穿过沟道部分并且沿沟道长度方向循环地设置。

公开(公告)号：US07335539B2

公开(公告)日：2008-02-26

申请号：US11893580

申请日：2007-08-16

Applicant: Akio Machida ,  Hirotaka Akao ,  Takahiro Kamei ,  Isamu Nakao

Inventor： Akio Machida ,  Hirotaka Akao ,  Takahiro Kamei ,  Isamu Nakao

IPC: H01L21/84 ,  H01L21/00 ,  H01L21/336

CPC classification number: H01L27/1285 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1214

Abstract: A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is continuously irradiated with the laser beam while shifting the position of the semiconductor thin film irradiated with the laser beam at a predetermined velocity so that excess hydrogen can be removed from the region irradiated with the laser beam without evaporating and expanding hydrogen ions in the semiconductor thin film.

Abstract translation: 制造薄膜半导体器件的方法包括用激光束照射非晶半导体薄膜以使非晶半导体薄膜结晶的退火步骤。 在退火步骤中，半导体薄膜连续照射激光束，同时以预定速度移动用激光束照射的半导体薄膜的位置，从而可以从没有激光束照射的区域去除过量的氢，而没有 在半导体薄膜中蒸发和膨胀氢离子。

公开(公告)号：US20070298550A1

公开(公告)日：2007-12-27

申请号：US11893580

申请日：2007-08-16

Applicant: Akio Machida ,  Hirotaka Akao ,  Takahiro Kamei ,  Isamu Nakao

Inventor： Akio Machida ,  Hirotaka Akao ,  Takahiro Kamei ,  Isamu Nakao

IPC: H01L21/84

CPC classification number: H01L27/1285 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1214

Abstract: A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is continuously irradiated with the laser beam while shifting the position of the semiconductor thin film irradiated with the laser beam at a predetermined velocity so that excess hydrogen can be removed from the region irradiated with the laser beam without evaporating and expanding hydrogen ions in the semiconductor thin film.

公开(公告)号：US07273774B2

公开(公告)日：2007-09-25

申请号：US11236001

申请日：2005-09-27

Applicant: Akio Machida ,  Hirotaka Akao ,  Takahiro Kamei ,  Isamu Nakao

Inventor： Akio Machida ,  Hirotaka Akao ,  Takahiro Kamei ,  Isamu Nakao

IPC: H01L21/84 ,  H01L21/00 ,  H01L21/336 ,  H01L21/36

CPC classification number: H01L27/1285 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1214

Abstract: A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is continuously irradiated with the laser beam while shifting the position of the semiconductor thin film irradiated with the laser beam at a predetermined velocity so that excess hydrogen can be removed from the region irradiated with the laser beam without evaporating and expanding hydrogen ions in the semiconductor thin film.

Abstract translation: 制造薄膜半导体器件的方法包括用激光束照射非晶半导体薄膜以使非晶半导体薄膜结晶的退火步骤。 在退火步骤中，半导体薄膜连续照射激光束，同时以预定速度移动用激光束照射的半导体薄膜的位置，从而可以从没有激光束照射的区域去除过量的氢，而没有 在半导体薄膜中蒸发和膨胀氢离子。

公开(公告)号：US20070051302A1

公开(公告)日：2007-03-08

申请号：US11553054

申请日：2006-10-26

Applicant: Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

Inventor： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

Abstract: Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

Abstract translation: 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。