公开(公告)号：US20120091544A1

公开(公告)日：2012-04-19

申请号：US13259570

申请日：2010-04-07

Applicant: Frank Reichenbach ,  Thomas Buck ,  Jochen Zoellin ,  Franz Laermer ,  Ulrike Scholz ,  Kathrin van Teeffelen ,  Christina Leinenbach

Inventor： Frank Reichenbach ,  Thomas Buck ,  Jochen Zoellin ,  Franz Laermer ,  Ulrike Scholz ,  Kathrin van Teeffelen ,  Christina Leinenbach

IPC: H01L29/84 ,  H01L21/02

CPC classification number: H04R19/005 ,  Y10T428/31663

Abstract: A component having a robust, but acoustically sensitive microphone structure is provided and a simple and cost-effective method for its production. This microphone structure includes an acoustically active diaphragm, which functions as deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counter element, which functions as counter electrode of the microphone capacitor, and an arrangement for detecting and analyzing the capacitance changes of the microphone capacitor. The diaphragm is realized in a diaphragm layer above the semiconductor substrate of the component and covers a sound opening in the substrate rear. The counter element is developed in a further layer above the diaphragm. This further layer generally extends across the entire component surface and compensates level differences, so that the entire component surface is largely planar according to this additional layer. This allows a foil to be applied on the layer configuration of the microphone structures exposed in the wafer composite, which makes it possible to dice up the components in a standard sawing process.

Abstract translation: 提供具有坚固但声学敏感的麦克风结构的部件，并且是用于其生产的简单且成本有效的方法。 这种麦克风结构包括一个声学活动的隔膜，它起着麦克风电容器的可偏转电极的作用，一个固定的，声学可渗透的计数元件，起着麦克风电容器的对电极的作用，以及用于检测和分析麦克风的电容变化的装置 电容器。 膜片在元件的半导体衬底上方的隔膜层中实现，并覆盖衬底后部的声音开口。 计数元件在膜片上方的另一层中显影。 该另一层通常跨越整个组件表面延伸并补偿水平差，使得根据该附加层，整个组件表面大部分是平面的。 这允许将箔施加在暴露在晶片复合材料中的麦克风结构的层结构上，这使得可以在标准锯切工艺中引导部件。

公开(公告)号：US06936902B2

公开(公告)日：2005-08-30

申请号：US10168584

申请日：2000-12-14

Applicant: Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  H01L29/82

CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.

Abstract translation: 传感器具有基础晶片，其具有传感器室，与基础晶片的传感器室一体化的至少一个硅基微机械结构，在传感器室的区域中覆盖基础晶片的至少一个覆盖物，所述覆盖物包括： 第一层，其是沉积层并且可蚀刻介质和反应产物，以及作为密封层并位于第一层上方的密封第二层，作为第一层的沉积层在第一层的区域中是可渗透的 传感器室到蚀刻介质和反应产物，用于透过的沉积层具有选自蚀刻开口，多孔区域和两者的结构。