公开(公告)号：US20100003778A1

公开(公告)日：2010-01-07

申请号：US12274435

申请日：2008-11-20

Applicant: Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

Inventor： Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

IPC: H01L33/00

CPC classification number: H01S5/22 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2214 ,  H01S5/2224

Abstract: A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.

Abstract translation: 半导体激光器的制造方法包括在半导体基板上依次形成第一导电型半导体层，有源层和第二导电型半导体层， 在第二导电类型半导体层中形成脊; 在第一温度下在第二导电类型半导体层上形成第一绝缘膜; 在低于第一温度的第二温度下在第一绝缘膜上形成第二绝缘膜; 以及在所述第二绝缘膜上形成电极。

公开(公告)号：US20080226223A1

公开(公告)日：2008-09-18

申请号：US12123531

申请日：2008-05-20

Applicant: Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

Inventor： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

IPC: G02B6/12 ,  H01L21/00

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02F1/025 ,  G02F2202/32 ,  H01L2933/0083 ,  H01S5/0424 ,  H01S5/105 ,  H01S5/1085 ,  H01S5/2004 ,  H01S5/3054 ,  H01S5/32

Abstract: A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

Abstract translation: 半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。 在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。 板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

公开(公告)号：US20050029536A1

公开(公告)日：2005-02-10

申请号：US10852180

申请日：2004-05-25

Applicant: Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

Inventor： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

IPC: H01S5/20 ,  G02B6/122 ,  H01S5/042 ,  H01L33/00

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02F1/025 ,  G02F2202/32 ,  H01L2933/0083 ,  H01S5/0424 ,  H01S5/105 ,  H01S5/1085 ,  H01S5/2004 ,  H01S5/3054 ,  H01S5/32

Abstract: A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

Abstract translation: 半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。 在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。 板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

公开(公告)号：US06778751B2

公开(公告)日：2004-08-17

申请号：US09817058

申请日：2001-03-27

Applicant: Hitoshi Tada ,  Kazuhisa Takagi

Inventor： Hitoshi Tada ,  Kazuhisa Takagi

IPC: G02B610

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/42

Abstract: An optical waveguide ridge has a side with a flat portion extending uniformly from a top of the ridge to a surface of a semiconductor substrate, the flat portion being in contact with an exposed surface of the substrate. A p-type electrode extends from the top of the optical waveguide ridge downward in contact with a dielectric film on the flat portion of the optical waveguide ridge. The p-type electrode further extends over the dielectric film onto the exposed surface of the semiconductor substrate where an end of the electrode is a bonding pad.

Abstract translation: 光波导脊具有从脊的顶部到半导体基板的表面均匀延伸的平坦部分的一侧，平坦部分与基板的暴露表面接触。 p型电极从光波导脊的顶部向下延伸，与光波导脊的平坦部分上的电介质膜接触。 p型电极进一步在电介质膜上延伸到半导体衬底的露出表面上，其中电极的端部是焊盘。

公开(公告)号：US06694601B2

公开(公告)日：2004-02-24

申请号：US09590625

申请日：2000-06-08

Applicant: Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

Inventor： Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

IPC: H01P1205

CPC classification number: H01P1/2056 ,  Y10T29/49016

Abstract: A method of adjusting characteristics of a dielectric filter including the following steps: forming a dielectric filter having a dielectric body, the dielectric body having an outer surface; forming an external conductor on the outer surface of the dielectric body; and forming at least one hole extending through the dielectric body, the at least one hole having a respective inner surface, and a respective internal conductor and a respective non-conductive portion at the inner surface; the outer surface of the dielectric body comprising first and second end surfaces and a side surface extending between the first and second end surfaces; the at least one hole extending through the dielectric body between the first and second end surfaces; the respective inner conductor being formed as a respective pair of internal conductors conductively connected to the external conductor at respective ends of the at least one hole, the respective non-conductive portion at the inner surface of the at least one hole being spaced from both end surfaces, thereby separating the corresponding pair of internal conductors and defining a respective capacitance between the corresponding pair of internal conductors; and a predetermined portion of the outer surface of the dielectric body being formed with a shape such that a first portion of the external conductor at the predetermined portion of the outer surface is closer to at least one of the internal conductors in the at least one hole as compared with a second portion of the external conductor at a portion of the outer surface of the dielectric body other than the predetermined portion; the method further comprising the steps of: initially forming the respective inner conductor over an entire length of the inner surface of the corresponding hole; and thereafter grinding off a portion of the respective inner conductor with a grinding tool in order to form the non-conductive portion.

Abstract translation: 一种调整介质滤波器的特性的方法，包括以下步骤：形成具有电介质体的介电滤波器，所述电介质体具有外表面; 在绝缘体的外表面上形成外部导体; 以及形成延伸穿过所述电介质体的至少一个孔，所述至少一个孔具有相应的内表面，以及相应的内部导体和在所述内表面处的相应的非导电部分; 电介质体的外表面包括第一和第二端面以及在第一和第二端面之间延伸的侧表面; 所述至少一个孔延伸穿过所述介电体在所述第一和第二端面之间; 相应的内部导体形成为在所述至少一个孔的相应端部处导电地连接到外部导体的相应的一对内部导体，所述至少一个孔的内表面处的相应的非导电部分与两个端部间隔开 从而分离相应的一对内部导体并且在相应的一对内部导体之间限定相应的电容; 并且所述电介质体的外表面的预定部分形成为使得所述外表面的所述预定部分处的所述外部导体的所述第一部分更靠近所述至少一个孔中的至少一个内部导体 与外部导体的除了预定部分之外的绝缘体外表面的一部分的第二部分相比; 该方法还包括以下步骤：在相应孔的内表面的整个长度上初始形成相应的内部导体; 然后用研磨工具研磨各个内部导体的一部分，以便形成非导电部分。

公开(公告)号：US06556101B1

公开(公告)日：2003-04-29

申请号：US09707264

申请日：2000-11-06

Applicant: Hitoshi Tada ,  Hideyuki Kato ,  Haruo Matsumoto

Inventor： Hitoshi Tada ,  Hideyuki Kato ,  Haruo Matsumoto

IPC: H01P1202

CPC classification number: H01P1/2056 ,  H01P7/04

Abstract: A small-sized low-loss dielectric resonator, dielectric filter, and dielectric duplexer, and a communication device using such an element. Through-holes are formed in a dielectric block. The inner surface of each through-hole is covered with a thin-film multilayer electrode consisting of an outermost conductive layer and a multilayer region including thin-film conductive layers and thin-film dielectric layers. An outer conductor having a similar thin-film multilayer electrode structure is formed on the outer surface of the dielectric block. An outer conductor in the form of a single-layer electrode is formed on a short-circuited end face of the dielectric block thereby connecting together the thin-film conductive layers of the inner and outer conductors.

Abstract translation: 小型低损耗介质谐振器，介质滤波器和介质双工器，以及使用这种元件的通信装置。 在介质块中形成通孔。 每个通孔的内表面被由最外面的导电层和包括薄膜导电层和薄膜电介质层的多层区组成的薄膜多层电极覆盖。 在介质块的外表面上形成具有类似薄膜多层电极结构的外导体。 在介质块的短路端面上形成单层电极形式的外导体，由此将内导体和外导体的薄膜导电层连接在一起。

公开(公告)号：US06359529B1

公开(公告)日：2002-03-19

申请号：US08998252

申请日：1997-12-24

Applicant: Kikuo Tsunoda ,  Hitoshi Tada

Inventor： Kikuo Tsunoda ,  Hitoshi Tada

IPC: H01P1213

CPC classification number: H01P1/2135 ,  H01P1/2136

Abstract: The invention provides a filtering device of the transmission-reception switched type which can be constructed in a form with a reduced size at a low cost without having to use circuit elements such as a capacitor, a coil, and a transmission line forming a phase shift circuit which are not essential to the filtering device. Inner conductors serving as distributed-parameter resonance lines are formed in a dielectric block. There is provided a coupling line coupled with particular inner conductors. The open-circuited ends of these particular inner conductors are connected to an outer conductor via corresponding diode switches so that transmission and reception filters are switched from each other when either diode switch is selectively turned on.

Abstract translation: 本发明提供了一种发送 - 接收切换型滤波装置，其可以以低成本构成尺寸减小的形式，而不必使用诸如电容器，线圈和形成相移的传输线之类的电路元件 电路对滤波装置不是必需的。 用作分布参数谐振线的内导体形成在介质块中。 提供了与特定内部导体耦合的耦合线。 这些特定内部导体的开路端通过相应的二极管开关连接到外部导体，使得当二极管开关选择性地导通时，发射和接收滤波器彼此切换。

公开(公告)号：US06226310B1

公开(公告)日：2001-05-01

申请号：US09032784

申请日：1998-03-02

Applicant: Kazuhisa Takagi ,  Hitoshi Tada

Inventor： Kazuhisa Takagi ,  Hitoshi Tada

IPC: H01S319

CPC classification number: H01S5/0265 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2275

Abstract: A semiconductor optical device includes a semiconductor laser region for producing laser light and having a first optical waveguide mesa structure including a first active layer and a diffraction grating, and first current blocking layers adjacent to opposite sides; a light modulator region for modulating the laser light and having a second optical waveguide mesa structure continuous with the first optical waveguide mesa structure and including a second active layer, and second current blocking layers adjacent to opposite sides; and a window region for propagating the laser light modulated by the light modulator region and having a mesa-shaped window structure continuous with the second optical waveguide mesa structure, the mesa width of the window structure being larger than the mesa width of the second optical waveguide mesa structure. The light is prevented from leaking from the window and reaching the interface of the window structure and a burying layer adjacent to the window structure. The laser light is not reflected at the interface of the window structure and the buried layer. The shape of the beam of laser light emitted from the window structure is not distorted, resulting in a satisfactory connection to an optical system.

Abstract translation: 半导体光学器件包括用于产生激光的半导体激光器区域，并具有包括第一有源层和衍射光栅的第一光波导台面结构以及与相对侧相邻的第一电流阻挡层; 用于调制激光并具有与第一光波导台面结构连续并包括第二有源层的第二光波导台面结构的光调制器区域和与相对侧相邻的第二电流阻挡层; 以及窗口区域，用于传播由所述光调制器区域调制的激光，并且具有与所述第二光波导台面结构连续的台面形窗口结构，所述窗口结构的台面宽度大于所述第二光波导的台面宽度 台面结构。 防止光从窗口泄漏并到达窗口结构的界面和与窗户结构相邻的掩埋层。 激光在窗口结构和埋层的界面处不被反射。 从窗结构发射的激光束的形状不变形，导致与光学系统的良好连接。

公开(公告)号：US6034579A

公开(公告)日：2000-03-07

申请号：US390629

申请日：1995-02-17

Applicant: Hitoshi Tada ,  Tatsuya Tsujiguchi

Inventor： Hitoshi Tada ,  Tatsuya Tsujiguchi

IPC: H01P1/205

CPC classification number: H01P1/2056

Abstract: A dielectric filter is formed by a plurality of resonator holes which are formed in a single dielectric block in such a manner that they extend in a direction between an open-circuited end surface and a short-circuited end surface of the dielectric block. The resonator holes are opened only at the short-circuited end surface. An inner conductor is formed on an inner surface of each of the resonator holes. An outer conductor is formed on an outer surface of the dielectric block. Capacitor electrodes respectively corresponding to the resonator holes are formed on the open-circuited end surface of the dielectric block. Input/output electrodes electrically connected to the capacitor electrodes are formed in such a manner that they extend on both the open-circuited end surface and a bottom surface of the dielectric block. In this structure, since all the capacitive components constituting the filter can be obtained by either the capacitances formed between the capacitor electrodes and the inner conductors, or the capacitances formed in a gap between the capacitor electrodes, the dielectric filter can be constructed in the form of a single block.

Abstract translation: 介质滤波器由多个谐振器孔形成，它们形成在单个介电块中，使得它们沿介质块的开路端面和短路端面之间的方向延伸。 谐振器孔只在短路端面打开。 内导体形成在每个谐振器孔的内表面上。 外导体形成在介质块的外表面上。 分别对应于谐振器孔的电容器电极形成在介质块的开路端面上。 电连接到电容器电极的输入/输出电极以这样的方式形成，使得它们在介电块的开路端面和底表面上延伸。 在这种结构中，由于可以通过形成在电容器电极和内部导体之间的电容或形成在电容器电极之间的间隙中的电容来获得构成滤波器的所有电容性分量，所以可以以 的单块。

公开(公告)号：US6014067A

公开(公告)日：2000-01-11

申请号：US839410

申请日：1997-04-14

Applicant: Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

Inventor： Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

IPC: H01P1/205 ,  H01P1/202

CPC classification number: H01P1/2056 ,  Y10T29/49016

Abstract: Dielectric resonator wherein an internal conductor non-formed portion is provided near one open face of the internal conductor formed holes, and signal input, output electrodes are provided on one portion of the external conductor, whereby electromagnetic field leakage is restrained, because the open face is not formed, and individual parts such as signal input, output pins and so on are not required.

Abstract translation: 介质谐振器，其中内部导体非形成部分设置在内部导体形成的孔的一个开放面附近，并且信号输入，输出电极设置在外部导体的一部分上，由此电磁场泄漏被限制，因为开放面 没有形成，不需要信号输入，输出引脚等各个部件。