公开(公告)号：US20220064489A1

公开(公告)日：2022-03-03

申请号：US17415705

申请日：2019-07-03

Applicant: KCTECH CO., LTD.

Inventor： Soo Wan CHOI ,  Jung Yoon KIM ,  Nak Hyun CHOI ,  Hae Won YANG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.

公开(公告)号：US20220025299A1

公开(公告)日：2022-01-27

申请号：US17381211

申请日：2021-07-21

Applicant: KCTECH CO., LTD.

Inventor： Kun Hee PARK ,  Yong Ho JEONG ,  Kyong Jin JUNG ,  Young Ho YUN

IPC: C11D3/24 ,  C11D3/00 ,  C11D1/40 ,  C11D3/37 ,  C11D11/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/304

Abstract: A cleaning solution composition and a cleaning method using the cleaning solution composition are provided. The cleaning solution composition includes a chelating agent including a first organic acid and a second organic acid, and an etching agent including a fluoride compound.

公开(公告)号：US20210179891A1

公开(公告)日：2021-06-17

申请号：US17121770

申请日：2020-12-15

Applicant: KCTECH CO., LTD.

Inventor： Kwang Soo PARK ,  Jun Ha HWANG ,  Jung Yoon KIM ,  Nak Hyun CHOI

IPC: C09G1/02 ,  C09G1/16 ,  H01L21/321

Abstract: A polishing slurry composition for a shallow trench isolation (STI) process is provided. The polishing slurry composition includes abrasive particles, a nonionic polymer, and a polar amino acid.

公开(公告)号：US20200300716A1

公开(公告)日：2020-09-24

申请号：US16823705

申请日：2020-03-19

Applicant: KCTECH CO., LTD.

Inventor： Jae Won LEE ,  Ju Young LEE ,  Kyung Cheol JEONG ,  Jun Ho LEE ,  Yong Guk PARK

IPC: G01K13/02 ,  G01K1/14

Abstract: Disclosed is a temperature detection device. The device for detecting temperature of a processing liquid for substrate processing according to an embodiment includes a temperature measurement sensor installed adjacent to an outer surface of a tube through which the processing liquid flows, in which the temperature measurement sensor senses the temperature of the processing liquid in the tube.

公开(公告)号：US20200147751A1

公开(公告)日：2020-05-14

申请号：US16400554

申请日：2019-05-01

Applicant: KCTECH CO., LTD.

Inventor： JUN HO SON ,  Sung Ho SHIN

IPC: B24B37/30 ,  B24B37/04

Abstract: Provided are a membrane and carrier head using the membrane for polishing apparatus. The membrane comprises a first fixing flap extending inwards from the upper part of a side portion, a second fixing flap extending upwards from the upper part of the side portion, wherein the second fixing flap has a first inclined part, a second inclined part and a third extending part of extending upwards whereby a compensation force generated by the inclined parts realize the constant pressing force to the edge of a substrate during a polishing process.

公开(公告)号：US20200013638A1

公开(公告)日：2020-01-09

申请号：US16495368

申请日：2018-02-05

Applicant: KCTECH CO., LTD.

Inventor： Kang il CHO

IPC: H01L21/677 ,  H01L21/687 ,  H01L21/683

Abstract: The present invention relates to a substrate processing apparatus, wherein the substrate processing apparatus for coating chemical liquid on a substrate comprises: a substrate support for supporting a substrate, a chemical liquid coating unit for applying and coating the chemical liquid to the substrate, and a preliminary drying unit for preliminarily drying chemical liquid in a state supported by the substrate support whereby it is possible to obtain the effect of preventing the chemical liquid from flowing down and forming a chemical liquid coating film of uniform thickness.

公开(公告)号：US10428240B2

公开(公告)日：2019-10-01

申请号：US15118723

申请日：2015-01-23

Applicant: KCTECH CO., LTD.

Inventor： Jang Kuk Kwon ,  Chan Un Jeon ,  Ki Hwa Jung ,  Jung Yoon Kim ,  Nak Hyun Choi ,  Seong Pyo Lee ,  Bo Hyeok Choi

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

Abstract: The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.

公开(公告)号：US10421883B2

公开(公告)日：2019-09-24

申请号：US15386502

申请日：2016-12-21

Applicant: KCTECH CO., LTD.

Inventor： Jang Kuk Kwon ,  Sung Pyo Lee ,  Chang Gil Kwon ,  Jun Ha Hwang

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321

Abstract: An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a second dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.

公开(公告)号：US12186900B2

公开(公告)日：2025-01-07

申请号：US17671259

申请日：2022-02-14

Applicant: KCTECH CO., LTD.

Inventor： Hee Sung Chae ,  Seung Eun Lee ,  Geun Sik Yun

IPC: B25J9/04 ,  B25J11/00 ,  B65G61/00

Abstract: A substrate cleaning line and a substrate cleaning system including the same are disclosed. The substrate cleaning line may include a chamber portion including a plurality of cleaning chambers to clean a substrate, and a first return robot to load, unload, or transfer the substrate from or to the plurality of cleaning chambers, wherein the cleaning chambers may be stacked on each other in a vertical direction.

公开(公告)号：US20240286176A1

公开(公告)日：2024-08-29

申请号：US18469540

申请日：2023-09-18

Applicant: KCTECH CO., LTD.

Inventor： Keun Woo LEE ,  Dae Jung KANG ,  Byeong Jo PARK

IPC: B08B5/04 ,  B08B3/02 ,  B08B5/02 ,  H01L21/67

CPC classification number: B08B5/043 ,  B08B3/022 ,  B08B5/023 ,  H01L21/67051 ,  B08B2203/0211

Abstract: A substrate cleaning apparatus includes a stage on which a substrate is placed, a support unit configured to support the substrate and to rotate the substrate, and a cleaning unit configured to spray a dual fluid to clean the substrate, wherein the cleaning unit may include a spray nozzle including a spray hole opened toward the stage and configured to spray a dual fluid through the spray hole, a cover that may include an inlet surrounding at least a partial area of an outer circumferential surface of the spray hole, that may surround at least a partial area of an outer circumferential surface of the spray nozzle, and that may be spaced apart from the spray nozzle by a predetermined distance, and an air flow passage formed in a space between the cover and the spray nozzle and through which air sucked from the inlet flows.