Model-based metrology using images
    21.
    发明授权

    公开(公告)号:US11200658B2

    公开(公告)日:2021-12-14

    申请号:US16454531

    申请日:2019-06-27

    Abstract: Methods and systems for combining information present in measured images of semiconductor wafers with additional measurements of particular structures within the measured images are presented herein. In one aspect, an image-based signal response metrology (SRM) model is trained based on measured images and corresponding reference measurements of particular structures within each image. The trained, image-based SRM model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. In another aspect, a measurement signal synthesis model is trained based on measured images and corresponding measurement signals generated by measurements of particular structures within each image by a non-imaging measurement technique. Images collected from other wafers are transformed into synthetic measurement signals associated with the non-imaging measurement technique and a model-based measurement is employed to estimate values of parameters of interest based on the synthetic signals.

    Overlay measurement using multiple wavelengths

    公开(公告)号:US11158548B2

    公开(公告)日:2021-10-26

    申请号:US16092559

    申请日:2018-09-03

    Abstract: A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and −1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and −1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.

    System and method for difference filter and aperture selection using shallow deep learning

    公开(公告)号:US11151707B2

    公开(公告)日:2021-10-19

    申请号:US16277769

    申请日:2019-02-15

    Abstract: A system for defect review and classification is disclosed. The system may include a controller, wherein the controller may be configured to receive one or more training images of a specimen. The one or more training images including a plurality of training defects. The controller may be further configured to apply a plurality of difference filters to the one or more training images, and receive a signal indicative of a classification of a difference filter effectiveness metric for at least a portion of the plurality of difference filters. The controller may be further configured to generate a deep learning network classifier based on the received classification and the attributes of the plurality of training defects. The controller may be further configured to extract convolution layer filters of the deep learning network classifier, and generate one or more difference filter recipes based on the extracted convolution layer filters.

    Differential imaging for single-path optical wafer inspection

    公开(公告)号:US11138722B2

    公开(公告)日:2021-10-05

    申请号:US16229816

    申请日:2018-12-21

    Abstract: Methods and systems for enhanced defect detection based on images collected by at least two imaging detectors at different times are described. In some embodiments, the time between image measurements is at least 100 microseconds and no more than 10 milliseconds. In one aspect, one or more defects of interest are identified based on a composite image of a measured area generated based on a difference between collected images. In a further aspect, measurement conditions associated with the each imaged location are adjusted to be different for measurements performed by at least two imaging detectors at different times. In some embodiments, the measurement conditions are adjusted during the time between measurements by different imaging detectors. Exemplary changes of measurement conditions include environmental changes at the wafer under measurement and changes made to the optical configuration of the inspection system.

    Hermetic sealing of a nonlinear crystal for use in a laser system

    公开(公告)号:US11119384B2

    公开(公告)日:2021-09-14

    申请号:US16133611

    申请日:2018-09-17

    Abstract: Disclosed are methods and apparatus for hermetically sealing a nonlinear optical (NLO) crystal for use in a laser system. A mounted NLO crystal, an enclosure base, a lid, and a plurality of window components are moved into an oven. A vacuum bake process is then performed on the mounted NLO crystal, enclosure base, lid, and plurality of window components until a humidity level that is less than a predefined amount is reached. The mounted NLO crystal, enclosure base, lid, and plurality of window components are moved from the oven onto a stage of a glove box that includes a sealing tool. In the glove box, the mounted NLO crystal is hermetically sealed into the enclosure base by sealing the lid and plurality of window components into openings of the enclosure base.

    Inspection system with non-circular pupil

    公开(公告)号:US11112691B2

    公开(公告)日:2021-09-07

    申请号:US16258118

    申请日:2019-01-25

    Abstract: An inspection system includes an illumination source configured to generate extreme ultraviolet (EUV) light, illumination optics to direct the EUV light to a sample within a range of off-axis incidence angles corresponding to an illumination pupil distribution, collection optics to collect light from the sample in response to the incident EUV light within a range of collection angles corresponding to an imaging pupil distribution, and a detector configured to receive at least a portion of the light collected by the collection optics. Further, a center of the illumination pupil distribution corresponds to an off-axis incidence angle along a first direction on the sample, and at least one of the illumination pupil distribution or the imaging pupil distribution is non-circular with a size along the first direction shorter than along a second direction perpendicular to the first direction.

    Topographic Phase Control For Overlay Measurement

    公开(公告)号:US20210255551A1

    公开(公告)日:2021-08-19

    申请号:US17241006

    申请日:2021-04-26

    Abstract: Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.

    Deep learning based adaptive regions of interest for critical dimension measurements of semiconductor substrates

    公开(公告)号:US11094053B2

    公开(公告)日:2021-08-17

    申请号:US16420408

    申请日:2019-05-23

    Inventor: Arpit Yati

    Abstract: A metrology system is disclosed. In one embodiment, the system includes a characterization sub-system configured to acquire one or more images of a specimen. In another embodiment, the system includes a controller configured to: receive one or more training images of a specimen from the characterization sub-system; receive one or more training region-of-interest (ROI) selections within the one or more training images; generate a machine learning classifier based on the one or more training images and the one or more training ROI selections; receive one or more product images of a specimen from the characterization sub-system; generate one or more classified regions of interest with the machine learning classifier; and determine one or more measurements of the specimen within the one or more classified regions of interest.

    Misregistration measurements using combined optical and electron beam technology

    公开(公告)号:US11075126B2

    公开(公告)日:2021-07-27

    申请号:US16477552

    申请日:2019-06-04

    Abstract: A misregistration metrology system useful in manufacturing semiconductor device wafers including an optical misregistration metrology tool configured to measure misregistration at at least one target between two layers of a semiconductor device which is selected from a batch of semiconductor device wafers which are intended to be identical, an electron beam misregistration metrology tool configured to measure misregistration at the at least one target between two layers of a semiconductor device which is selected from the batch and a combiner operative to combine outputs of the optical misregistration metrology tool and the electron beam misregistration metrology tool to provide a combined misregistration metric.

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