中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

167 records (took 0.019 seconds)

    Lithium secondary battery and method for producing the same
    22.
    发明申请
    Lithium secondary battery and method for producing the same 有权
    锂二次电池及其制造方法

    公开(公告)号：US20060154139A1

    公开(公告)日：2006-07-13

    申请号：US11330183

    申请日：2006-01-12

    Applicant: Masato Fujikawa ,  Akira Nagasaki ,  Tetsu Hashimoto ,  Kaoru Inoue ,  Mikinari Shimada

    Inventor： Masato Fujikawa ,  Akira Nagasaki ,  Tetsu Hashimoto ,  Kaoru Inoue ,  Mikinari Shimada

    IPC: H01M2/18 ,  H01M10/04

    CPC classification number: H01M10/052 ,  H01M2/145 ,  H01M2/18 ,  H01M4/04 ,  H01M10/0431 ,  H01M10/0587 ,  H01M10/4235 ,  H01M2004/027 ,  Y10T29/49115

    Abstract: In a lithium secondary battery of the present invention, the positive electrode includes a positive electrode current collector and a positive electrode active material layer carried on the positive electrode current collector, the negative electrode includes a negative electrode current collector and a negative electrode active material layer carried on the negative electrode current collector, a heat-resistant layer is formed on the negative electrode, and an insulating tape is attached onto at least a part of the exposed portion of the positive electrode current collector that is opposite to the end of the negative electrode active material layer. Thus, by forming the heat-resistant layer on the negative electrode and attaching the insulating tape onto a part of the exposed portion of the positive electrode current collector, it is possible to efficiently provide a lithium secondary battery exhibiting high safety.

    Abstract translation: 在本发明的锂二次电池中，所述正极具有负极集电体和负极活性物质层，负极包括负极集电体和负极活性物质层 承载在负极集电体上，在负极上形成耐热层，绝缘带附着在正极集电体的暴露部分的与负极端相反的至少一部分上 电极活性物质层。 因此，通过在负极上形成耐热层并将绝缘带附着在正极集电体的露出部分的一部分上，可以有效地提供具有高安全性的锂二次电池。

    Contact formation method and semiconductor device
    23.
    发明申请
    Contact formation method and semiconductor device 审中-公开
    触点形成方法和半导体器件

    公开(公告)号：US20050189651A1

    公开(公告)日：2005-09-01

    申请号：US10625546

    申请日：2003-07-24

    Applicant: Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

    Inventor： Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

    IPC: H01L21/285 ,  H01L23/48 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323

    CPC classification number: H01L21/28575 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/32341

    Abstract: An object of the present invention is to reduce the resistance of an electrode of a Group III nitride semiconductor. A thin Si film and a thin Ti film are formed selectively in a contact formation region on a surface of an AlGaN layer as a Group III nitride semiconductor layer formed on a substrate, and the resulting substrate is heat-treated at a high temperature. By the heat treatment, Si is diffused into the AlGaN layer in the ohmic contact formation region at a concentration of about 1020 cm3. Further, an electron density sufficiently high to provide an ohmic characteristic through a reaction between Si and Ti is provided. Thus, a low resistance TiSi2 portion resulting from the reaction between Si and Ti, a TiN portion resulting from a reaction between Ti and AlGaN and a Group III metal portion of Ga and Al devoid of nitrogen are formed in the contact formation region thereby to provide a low resistance electrode film mainly comprising TiSi2.

    Abstract translation: 本发明的目的是降低III族氮化物半导体的电极的电阻。 在AlGaN层的表面上的接触形成区域中选择性地形成薄的Si膜和薄的Ti膜，作为形成在衬底上的III族氮化物半导体层，并将所得到的衬底在高温下进行热处理。 通过热处理，Si在欧姆接触形成区域中扩散到约10 20 cm 3的浓度的AlGaN层中。 此外，提供足够高的电子密度以通过Si和Ti之间的反应提供欧姆特性。 因此，形成由Si和Ti之间的反应产生的低电阻TiSi 2 H 2部分，由Ti和AlGaN之间的反应导致的TiN部分和缺少氮的Ga和Al的III族金属部分 在接触形成区域中，由此提供主要包含TiSi 2 N的低电阻电极膜。

    SEMICONDUCTOR DEVICE
    25.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20050001234A1

    公开(公告)日：2005-01-06

    申请号：US10711134

    申请日：2004-08-26

    Applicant: Kaoru INOUE ,  Katsunori NISHII ,  Hiroyuki MASATO

    Inventor： Kaoru INOUE ,  Katsunori NISHII ,  Hiroyuki MASATO

    IPC: H01L29/04 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778 ,  H01L31/0328

    CPC classification number: H01L29/7783 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/42316

    Abstract: A semiconductor device includes: a substrate; a buffer layer including GaN formed on the substrate, wherein: surfaces of the buffer layer are c facets of Ga atoms; a channel layer including GaN or InGaN formed on the buffer layer, wherein: surfaces of the channel layer are c facets of Ga or In atoms; an electron donor layer including AlGaN formed on the channel layer, wherein: surfaces of the electron donor layer are c facets of Al or Ga atoms; a source electrode and a drain electrode formed on the electron donor layer; a cap layer including GaN or InGaAlN formed between the source electrode and the drain electrode, wherein: surfaces of the cap layer are c facets of Ga or In atoms and at least a portion of the cap layer is in contact with the electron donor layer; and a gate electrode formed at least a portion of which is in contact with the cap layer.

    Abstract translation: 半导体器件包括：衬底; 包括形成在衬底上的GaN的缓冲层，其中：缓冲层的表面是Ga原子的c个面; 在缓冲层上形成包括GaN或InGaN的沟道层，其中：沟道层的表面是Ga或In原子的c面; 包括形成在沟道层上的AlGaN的电子给体层，其中：电子给体层的表面是Al或Ga原子的c个面; 形成在电子供体层上的源电极和漏电极; 形成在源电极和漏电极之间的包含GaN或InGaAlN的覆盖层，其中：覆盖层的表面是Ga或In原子的c面，并且覆盖层的至少一部分与电子给体层接触; 以及形成为至少一部分与盖层接触的栅电极。

    Negative electrode for secondary cell, negative plate for secondary cell, and secondary cell comprising the same
    26.
    发明授权
    Negative electrode for secondary cell, negative plate for secondary cell, and secondary cell comprising the same 失效
    二次电池用负极，二次电池用负极板，二次电池用二次电池

    公开(公告)号：US06555268B1

    公开(公告)日：2003-04-29

    申请号：US09485335

    申请日：2000-05-10

    Applicant: Kaoru Inoue ,  Shusaku Goto ,  Yui Takahashi ,  Toyoji Sugimoto

    Inventor： Kaoru Inoue ,  Shusaku Goto ,  Yui Takahashi ,  Toyoji Sugimoto

    IPC: H01M462

    CPC classification number: H01M4/621 ,  H01M4/133 ,  H01M4/587 ,  H01M4/622 ,  H01M10/0525

    Abstract: A binder made of a mixture of a first binder component including styrene butadiene copolymer containing styrene at between 20% and 70%, and a second binder component selected from at least one of styrene butadiene copolymer containing styrene at between 80% and 100% and polystyrene is used for the negative electrode of rechargeable batteries comprising a carbon material and the binder. The use of the negative electrode comprising the carbon material and binder results in good resistance to peeling of a coated film, and thus ease of handling of a negative electrode sheet. Consequently, rechargeable batteries with good low-temperature discharge characteristics are supplied at good yield.

    Abstract translation: 由含有20％至70％的苯乙烯的苯乙烯丁二烯共聚物的第一粘合剂组分和选自至少一种含有80％至100％的苯乙烯的苯乙烯丁二烯共聚物和第二粘合剂组分的混合物制成的粘合剂和聚苯乙烯 用于包含碳材料和粘合剂的可再充电电池的负极。 通过使用由碳材料和粘合剂构成的负极，能够很好地抵抗涂膜的剥离，容易处理负极片。 因此，以良好的收率提供具有良好低温放电特性的可充电电池。

    Bipolar transistor and method for fabricating the same
    27.
    发明授权
    Bipolar transistor and method for fabricating the same 有权
    双极晶体管及其制造方法

    公开(公告)号：US06323538B1

    公开(公告)日：2001-11-27

    申请号：US09480942

    申请日：2000-01-11

    Applicant: Takeshi Fukuda ,  Daisuke Ueda ,  Kaoru Inoue ,  Katsunori Nishii ,  Toshinobu Matsuno

    Inventor： Takeshi Fukuda ,  Daisuke Ueda ,  Kaoru Inoue ,  Katsunori Nishii ,  Toshinobu Matsuno

    IPC: H01L27082

    CPC classification number: H01L29/66265 ,  H01L29/7317

    Abstract: An n-type first single crystal silicon layer is provided as collector region over a silicon substrate with a first insulating film interposed therebetween. A p-type first polysilicon layer is provided as an extension of a base region over the first single crystal silicon layer with a second insulating film interposed therebetween. A p-type second single crystal silicon layer is provided as intrinsic base region on a side of the first single crystal silicon layer, second insulating film and first polysilicon layer. An n-type third single crystal silicon layer is provided as emitter region on a side of the second single crystal silicon layer. And an n-type third polysilicon layer is provided on the first insulating film as extension of an emitter region and is connected to a side of the third single crystal silicon layer.

    Abstract translation: 在硅衬底上设置n型第一单晶硅层作为集电极区域，其间插入有第一绝缘膜。 提供p型第一多晶硅层作为第一单晶硅层上的基极区域的延伸，其间插入第二绝缘膜。 在第一单晶硅层，第二绝缘膜和第一多晶硅层的一侧设置p型第二单晶硅层作为本征基极区域。 在第二单晶硅层的一侧设置n型第三单晶硅层作为发射极区域。 并且在第一绝缘膜上设置n型第三多晶硅层作为发射极区域的延伸并且连接到第三单晶硅层的一侧。

    Resin-molded product and yellowing inhibitor
    28.
    发明授权
    Resin-molded product and yellowing inhibitor 失效
    树脂成型品和泛黄抑制剂

    公开(公告)号：US5942567A

    公开(公告)日：1999-08-24

    申请号：US671194

    申请日：1996-06-27

    Applicant: Kaoru Inoue ,  Takeyoshi Nishio ,  Arimitsu Usuki ,  Hisato Takeuchi

    Inventor： Kaoru Inoue ,  Takeyoshi Nishio ,  Arimitsu Usuki ,  Hisato Takeuchi

    IPC: C08J7/04 ,  C08K5/13 ,  C08K5/37 ,  C08L101/00

    CPC classification number: C08K5/13 ,  C08K5/37

    Abstract: A resin-molded product includes a phenol-based oxidation inhibitor, and a thiol-based compound. The thiol-based compound reacts chemically with a coloring substance (or a compound having a quinone-type structure) resulting from the phenol-based oxidation inhibitor to interrupt a long conjugated system arising in the coloring substance. As a result, the absorption due to the coloring substance is canceled in the visible light region. Thus, the resin-molded product is inhibited from yellowing.

    Abstract translation: 树脂成型体包含酚系氧化抑制剂和硫醇系化合物。 基于硫醇的化合物与由苯酚系氧化抑制剂得到的着色物质（或具有醌型结构的化合物）化学反应，以中断着色物质中产生的长的共轭体系。 结果，由于着色物质引起的吸收在可见光区域被抵消。 因此，可以防止树脂成型体发黄。

    Field effect transistor
    29.
    发明授权
    Field effect transistor 失效
    场效应晶体管

    公开(公告)号：US5751030A

    公开(公告)日：1998-05-12

    申请号：US806798

    申请日：1997-02-26

    Applicant: Kazuhisa Fujimoto ,  Toshinobu Matsuno ,  Kaoru Inoue

    Inventor： Kazuhisa Fujimoto ,  Toshinobu Matsuno ,  Kaoru Inoue

    IPC: H01L29/10 ,  H01L29/812 ,  H01L31/0328

    CPC classification number: H01L29/8128 ,  H01L29/1029

    Abstract: On a GaAs substrate are provided a buffer layer comprising an Undope-GaAs layer, a first n-InGaAs layer having an In composition ratio of 0.2, a second n-InGaAs layer having an In composition ratio of 0.02, a contact layer comprising an N.sup.+ type GaAs layer, a gate electrode, a source electrode, and a drain electrode. The first n-InGaAs layer and the second n-InGaAs layer form active layers in which an operating current flows. The second n-InGaAs layer having excellent crystallinity is formed on the first n-InGaAs layer. Consequently, a field effect transistor which displays a super low distortion characteristic having IP2 of 67.2 dBm and IP3 of 35 dBm can be manufactured with good reproducibility.

    Abstract translation: 在GaAs衬底上设置缓冲层，其包括Undope-GaAs层，In组成比为0.2的第一n-InGaAs层，In组成比为0.02的第二n-InGaAs层，包含N + 型GaAs层，栅电极，源电极和漏电极。 第一n-InGaAs层和第二n-InGaAs层形成其中工作电流流动的有源层。 在第一n-InGaAs层上形成具有优异结晶度的第二n-InGaAs层。 因此，可以以良好的再现性制造出具有IP2为67.2dBm，IP3为35dBm的超低失真特性的场效应晶体管。

Patent Agency Ranking