公开(公告)号：US20050274321A1

公开(公告)日：2005-12-15

申请号：US11147434

申请日：2005-06-08

Applicant: Tomoaki Ukei ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Kazuki Denpoh

Inventor： Tomoaki Ukei ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Kazuki Denpoh

IPC: C23C16/00 ,  C23C16/458 ,  C23C16/52 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/4585 ,  C23C16/463 ,  H01L21/67248

Abstract: A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50° C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.

Abstract translation: 一种等离子体处理装置，用于通过处理室中的高频功率将处理气体转换成等离子体，并且对安装在安装台上的基板进行等离子体处理包括设置成围绕安装台上的基板的环形部分，以及 温度控制单元，用于建立环部和基板之间的温度差，使得环部比基板高至少50℃。 此外，处理气体产生氯自由基，温度控制单元是用于加热环形部分的加热单元和用于冷却安装台的冷却单元中的至少一个。